Dong Ji
Dong Ji
Intel Corp.
Verified email at stanford.edu - Homepage
Title
Cited by
Cited by
Year
Design of 1.2 kV Power Switches With LowUsing GaN-Based Vertical JFET
D Ji, S Chowdhury
IEEE Transactions on Electron Devices 62 (8), 2571-2578, 2015
642015
Normally OFF trench CAVET with active Mg-doped GaN as current blocking layer
D Ji, MA Laurent, A Agarwal, W Li, S Mandal, S Keller, S Chowdhury
IEEE Transactions on Electron Devices 64 (3), 805-808, 2016
502016
880V/2.7 mΩ· cm 2 MIS Gate Trench CAVET on Bulk GaN Substrates
D Ji, A Agarwal, H Li, W Li, S Keller, S Chowdhury
IEEE Electron Device Letters 39 (6), 863, 2018
402018
Demonstrating> 1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices
D Ji, C Gupta, SH Chan, A Agarwal, W Li, S Keller, UK Mishra, ...
2017 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2017
372017
Dispersion free 450-V p GaN-gated CAVETs with Mg-ion implanted blocking layer
S Mandal, A Agarwal, E Ahmadi, KM Bhat, D Ji, MA Laurent, S Keller, ...
IEEE Electron Device Letters 38 (7), 933-936, 2017
312017
Dynamic modeling and power loss analysis of high-frequency power switches based on GaN CAVET
D Ji, Y Yue, J Gao, S Chowdhury
IEEE Transactions on Electron Devices 63 (10), 4011-4017, 2016
302016
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)
D Ji, G Chirag, A Anchal, C Silvia,H, L Cory, L Wenwen, K Stacia, ...
IEEE Electron Device Letters 39 (5), 711, 2018
292018
Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors
D Ji, B Liu, Y Lu, G Liu, Q Zhu, Z Wang
Applied Physics Letters 100 (13), 132105, 2012
272012
Demonstration of GaN static induction transistor (SIT) using self-aligned process
W Li, D Ji, R Tanaka, S Mandal, M Laurent, S Chowdhury
IEEE Journal of the Electron Devices Society 5 (6), 485-490, 2017
222017
Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation
D Ji, A Agarwal, W Li, S Keller, S Chowdhury
IEEE Transactions on Electron Devices 65 (2), 483, 2018
182018
Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures
D Ji, B Ercan, S Chowdhury
Applied Physics Letters 115 (7), 073503, 2019
162019
Influence of a two-dimensional electron gas on current-voltage characteristics of Al0. 3Ga0. 7 N/GaN high electron mobility transistors
J Dong, L Bing, L Yan-Wu, Z Miao, F Bo-Ling
Chinese Physics B 21 (6), 067201, 2012
132012
Improved Dynamic RONof GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch
D Ji, W Li, A Agarwal, SH Chan, J Haller, D Bisi, M Labrecque, C Gupta, ...
IEEE Electron Device Letters 39 (7), 1030-1033, 2018
112018
First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)
D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, MA Laurent, S Keller, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
112017
A study on the impact of channel mobility on switching performance of vertical GaN MOSFETs
D Ji, W Li, S Chowdhury
IEEE Transactions on Electron Devices 65 (10), 4271-4275, 2018
92018
Switching performance analysis of GaN OG-FET using TCAD device-circuit-integrated model
D Ji, W Li, S Chowdhury
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
82018
A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2 kV application
D Ji, S Chowdhury
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
82015
Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m cm2/1500 V GaN Diodes
D Ji, S Li, B Ercan, C Ren, S Chowdhury
IEEE Electron Device Letters 41 (2), 264-267, 2019
72019
Impact of trench dimensions on the device performance of GaN vertical trench MOSFETs
C Gupta, D Ji, SH Chan, A Agarwal, W Leach, S Keller, S Chowdhury, ...
IEEE Electron Device Letters 38 (11), 1559-1562, 2017
72017
III-nitride based N polar vertical tunnel transistor
S Chowdhury, D Ji
US Patent 9,893,174, 2018
62018
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