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Kang Ning
Kang Ning
ECE, UCSB
Verified email at ucsb.edu
Title
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Cited by
Year
A 30-GHz CMOS SOI outphasing power amplifier with current mode combining for high backoff efficiency and constant envelope operation
K Ning, Y Fang, N Hosseinzadeh, JF Buckwalter
IEEE Journal of Solid-State Circuits 55 (5), 1411-1421, 2019
452019
A 130-GHz power amplifier in a 250-nm InP process with 32% PAE
K Ning, Y Fang, M Rodwell, J Buckwalter
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 1-4, 2020
292020
An 18-dBm, 57 to 85-GHz, 4-stack FET power amplifier in 45-nm SOI CMOS
K Ning, JF Buckwalter
2018 IEEE/MTT-S International Microwave Symposium-IMS, 1453-1456, 2018
252018
Prospects for high-efficiency silicon and lll-V power amplifiers and transmitters in 100-300 GHz bands
JF Buckwalter, MJW Rodwell, K Ning, A Ahmed, A Arias-Purdue, J Chien, ...
2021 IEEE Custom Integrated Circuits Conference (CICC), 1-7, 2021
202021
A linear microwave electro-optic front end with SiGe distributed amplifiers and segmented silicon photonic Mach–Zehnder modulator
N Hosseinzadeh, A Jain, K Ning, R Helkey, JF Buckwalter
IEEE Transactions on Microwave Theory and Techniques 67 (12), 5446-5458, 2019
152019
A 0.5-20 GHz RF Silicon Photonic Receiver with 120 dB•Hz2/3 SFDR using Broadband Distributed IM3 Injection Linearization
N Hosseinzadeh, A Jain, K Ning, R Helkey, JF Buckwalter
2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 99-102, 2019
132019
A 28-GHz, 18-dBm, 48% PAE stacked-FET power amplifier with coupled-inductor neutralization in 45-nm SOI CMOS
K Ning, JF Buckwalter
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018
112018
A 60-GHz symmetric doherty power amplifier with 20.4% 6-dB back-off efficiency
M Tanio, K Ning, JF Buckwalter
2019 49th European Microwave Conference (EuMC), 559-562, 2019
82019
A 1 to 20 GHz silicon-germanium low-noise distributed driver for RF silicon photonic Mach-Zehnder modulators
N Hosseinzadeh, A Jain, K Ning, R Helkey, JF Buckwalter
2019 IEEE MTT-S International Microwave Symposium (IMS), 774-777, 2019
82019
A 2-stage, 140-GHz Class-B Power Amplifier Achieving 22.5% PAE at 17.3 dBm in a 250-nm InP HBT Technology
E Lam, K Ning, A Ahmed, M Rodwell, J Buckwalter
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 448-451, 2022
42022
Fundamental Limits of High-Efficiency Silicon and Compound Semiconductor Power Amplifiers in 100—300 GHz Bands
JF Buckwalter, MJW Rodwell, K Ning, A Ahmed, A Arias-Purdue, J Chien, ...
ITU J. Future Evol. Technol 2, 2021
32021
Wideband vector modulator phase shifter
K Ning, H Krishnaswamy, A Natarajan
US Patent 11,627,024, 2023
22023
A 120-mw, q-band inp hbt power amplifier with 46% peak pae
A Arias-Purdue, P Rowell, M Urteaga, K Shinohara, A Carter, J Bergman, ...
2020 IEEE/MTT-S International Microwave Symposium (IMS), 1291-1294, 2020
22020
Power amplifier
JF Buckwalter, K Ning
US Patent 11,652,447, 2023
12023
Methods and apparatus for supporting linearization on power combined power amplifiers
K Ning, H Krishnaswamy
US Patent App. 17/509,925, 2022
12022
A Multi-stage 19.2-dBm, 30.4%-PAE D-band Power Amplifier in a 250-nm InP HBT Process
E Lam, K Ning, ASH Ahmed, M Rodwell, JF Buckwalter
2023 IEEE/MTT-S International Microwave Symposium-IMS 2023, 1042-1045, 2023
2023
High efficiency mm-wave power amplifier design methodology
K Ning
University of California, Santa Barbara, 2020
2020
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Articles 1–17