| A new small-signal modeling approach applied to GaN devices A Jarndal, G Kompa IEEE Transactions on Microwave Theory and Techniques 53 (11), 3440-3448, 2005 | 332 | 2005 |
| Large-signal model for AlGaN/GaN HEMTs accurately predicts trapping-and self-heating-induced dispersion and intermodulation distortion A Jarndal, G Kompa IEEE Transactions on Electron Devices 54 (11), 2830-2836, 2007 | 127 | 2007 |
| Improved modeling of GaN HEMTs on Si substrate for design of RF power amplifiers A Jarndal, AZ Markos, G Kompa IEEE transactions on microwave theory and techniques 59 (3), 644-651, 2011 | 97 | 2011 |
| An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction A Jarndal, G Kompa IEEE microwave and wireless components letters 16 (6), 333-335, 2006 | 75 | 2006 |
| A reliable model parameter extraction method applied to AlGaN/GaN HEMTs A Jarndal, R Essaadali, AB Kouki IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2015 | 73 | 2015 |
| Large signal modeling of gan device for high power amplifier design AH Jarndal kassel university press GmbH, 2006 | 60 | 2006 |
| Reliable hybrid small-signal modeling of GaN HEMTs based on particle-swarm-optimization AS Hussein, AH Jarndal IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2017 | 49 | 2017 |
| ANN-based large-signal model of AlGaN/GaN HEMTs with accurate buffer-related trapping effects characterization X Du, M Helaoui, A Jarndal, T Liu, B Hu, X Hu, FM Ghannouchi IEEE Transactions on Microwave Theory and Techniques 68 (7), 3090-3099, 2020 | 48 | 2020 |
| On neural networks based electrothermal modeling of GaN devices A Jarndal IEEE Access 7, 94205-94214, 2019 | 46 | 2019 |
| On the performance of GaN‐on‐silicon, silicon‐carbide, and diamond substrates A Jarndal, L Arivazhagan, D Nirmal International Journal of RF and Microwave Computer‐Aided Engineering 30 (6 …, 2020 | 41 | 2020 |
| A new small signal model parameter extraction method applied to GaN devices A Jarndal, G Kompa IEEE MTT-S International Microwave Symposium Digest, 2005., 1423-1426, 2005 | 40 | 2005 |
| Large-signal modeling of GaN HEMTs using hybrid GA-ANN, PSO-SVR, and GPR-based approaches A Jarndal, S Husain, M Hashmi, FM Ghannouchi IEEE Journal of the Electron Devices Society 9, 195-208, 2020 | 39 | 2020 |
| Reliable noise modeling of GaN HEMTs for designing low‐noise amplifiers A Jarndal, A Hussein, G Crupi, A Caddemi International Journal of Numerical Modelling: Electronic Networks, Devices …, 2020 | 38 | 2020 |
| AlGaN/GaN HEMTs on SiC and Si substrates: a review from the small‐signal‐modeling's perspective A Jarndal International Journal of RF and Microwave Computer‐Aided Engineering 24 (3 …, 2014 | 34 | 2014 |
| A new GaN HEMT equivalent circuit modeling technique based on X-parameters R Essaadali, A Jarndal, AB Kouki, FM Ghannouchi IEEE Transactions on Microwave Theory and Techniques 64 (9), 2758-2777, 2016 | 33 | 2016 |
| Accurate large-signal modeling of AlGaN-GaN HEMT including trapping and self-heating induced dispersion A Jarndal, B Bunz, G Kompa 2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006 | 31 | 2006 |
| Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design A Jarndal, P Aflaki, L Degachi, A Birafane, A Kouki, R Negra, ... Solid-state electronics 54 (7), 696-700, 2010 | 30 | 2010 |
| Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects A Jarndal, FM Ghannouchi Solid-State Electronics 123, 19-25, 2016 | 29 | 2016 |
| On the Usefulness of Pre-processing Methods in Rotating Machines Faults Classification using Artificial Neural Network A Alzghoul, A Jarndal, I Alsyouf, AA Bingamil, MA Ali, S AlBaiti Journal of Applied and Computational Mechanics 7 (1), 254-261, 2021 | 27 | 2021 |
| Design and implementation of a sign-to-speech/text system for deaf and dumb people D Abdulla, S Abdulla, R Manaf, AH Jarndal 2016 5th International Conference on Electronic Devices, Systems and …, 2016 | 25 | 2016 |
