Wojciech Paszkowicz
Wojciech Paszkowicz
Professor of Materials Science, Institute of Physics, Warsaw
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Cited by
Cited by
Lattice parameters and anisotropic thermal expansion of hexagonal boron nitride in the 10–297.5 K temperature range
W Paszkowicz, JB Pelka, M Knapp, T Szyszko, S Podsiadlo
Applied Physics A 75, 431-435, 2002
Extremely low temperature growth of ZnO by atomic layer deposition
E Guziewicz, IA Kowalik, M Godlewski, K Kopalko, V Osinniy, A Wójcik, ...
Journal of Applied Physics 103 (3), 2008
Genetic algorithms, a nature-inspired tool: survey of applications in materials science and related fields
W Paszkowicz
Materials and Manufacturing Processes 24 (2), 174-197, 2009
Rietveld-refinement study of aluminium and gallium nitrides
W Paszkowicz, S Podsiadło, R Minikayev
Journal of alloys and compounds 382 (1-2), 100-106, 2004
ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions
E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, A Szczepanik, ...
Journal of Applied Physics 105 (12), 2009
XPS and XRD study of crystalline 3C-SiC grown by sublimation method
RJ Iwanowski, K Fronc, W Paszkowicz, M Heinonen
Journal of alloys and compounds 286 (1-2), 143-147, 1999
Magnetic properties of La 0.67 Sr 0.33 MnO 3/YBa 2 Cu 3 O 7 superlattices
P Przyslupski, I Komissarov, W Paszkowicz, P Dluzewski, R Minikayev, ...
Physical Review B 69 (13), 134428, 2004
Raman scattering in α-In2Se3 crystals
R Lewandowska, R Bacewicz, J Filipowicz, W Paszkowicz
Materials research bulletin 36 (15), 2577-2583, 2001
Rietveld refinement for indium nitride in the 105–295 K range
W Paszkowicz, R Černę, S Krukowski
Powder Diffraction 18 (2), 114-121, 2003
Controlling of preferential growth mode of ZnO thin films grown by atomic layer deposition
A Wójcik, M Godlewski, E Guziewicz, R Minikayev, W Paszkowicz
Journal of Crystal Growth 310 (2), 284-289, 2008
X-ray powder diffraction data for indium nitride
W Paszkowicz
Powder Diffraction 14 (4), 258-260, 1999
Genetic algorithms, a nature-inspired tool: a survey of applications in materials science and related fields: part II
W Paszkowicz
Materials and Manufacturing Processes 28 (7), 708-725, 2013
Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature
E Przeździecka, W Paszkowicz, E Łusakowska, T Krajewski, G Łuka, ...
Semiconductor Science and Technology 24 (10), 105014, 2009
Complementary microstructural and chemical analyses of Sepia officinalis endoskeleton
M Florek, E Fornal, P Gómez-Romero, E Zieba, W Paszkowicz, J Lekki, ...
Materials Science and Engineering: C 29 (4), 1220-1226, 2009
Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition
G Luka, T Krajewski, L Wachnicki, B Witkowski, E Lusakowska, ...
physica status solidi (a) 207 (7), 1568-1571, 2010
Rietveld refinement for CuInSe2 and CuIn3Se5
W Paszkowicz, R Lewandowska, R Bacewicz
Journal of alloys and compounds 362 (1-2), 241-247, 2004
Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors
IA Kowalik, E Guziewicz, K Kopalko, S Yatsunenko, A Wójcik-Głodowska, ...
Journal of crystal growth 311 (4), 1096-1101, 2009
Composition dependence of the unit cell dimensions and the energy gap in Zn1-xMgxSe crystals
F Firszt, H Meczynska, B Sekulska, J Szatkowski, W Paszkowicz, ...
Semiconductor science and technology 10 (2), 197, 1995
High-pressure powder X-ray diffraction at the turn of the century
W Paszkowicz
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
Homogeneous and heterogeneous magnetism in (Zn, Co) O: From a random antiferromagnet to a dipolar superferromagnet by changing the growth temperature
M Sawicki, E Guziewicz, MI Łukasiewicz, O Proselkov, IA Kowalik, ...
Physical Review B 88 (8), 085204, 2013
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