Soline Boyer-Richard
Soline Boyer-Richard
FOTON, INSA de Rennes, France
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Energy-band structure of Ge, Si, and GaAs: A thirty-band k∙ p method
S Richard, F Aniel, G Fishman
Physical Review B 70 (23), 235204, 2004
Anharmonicity and disorder in the black phases of cesium lead iodide used for stable inorganic perovskite solar cells
A Marronnier, G Roma, S Boyer-Richard, L Pedesseau, JM Jancu, ...
ACS nano 12 (4), 3477-3486, 2018
Energy-band structure in strained silicon: A 20-band and Bir–Pikus Hamiltonian model
S Richard, F Aniel, G Fishman, N Cavassilas
Journal of applied physics 94 (3), 1795-1799, 2003
Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen
C Robert, A Bondi, TN Thanh, J Even, C Cornet, O Durand, JP Burin, ...
Applied Physics Letters 98 (25), 251110, 2011
Band diagrams of Si and Ge quantum wells via the 30-band k∙ p method
S Richard, F Aniel, G Fishman
Physical Review B 72 (24), 245316, 2005
Strained silicon on SiGe: Temperature dependence of carrier effective masses
S Richard, N Cavassilas, F Aniel, G Fishman
Journal of applied physics 94 (8), 5088-5094, 2003
Symmetry-based tight binding modeling of halide perovskite semiconductors
S Boyer-Richard, C Katan, B Traoré, R Scholz, JM Jancu, J Even
The Journal of Physical Chemistry Letters 7 (19), 3833-3840, 2016
Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature
DT Nguyen, L Lombez, F Gibelli, S Boyer-Richard, A Le Corre, O Durand, ...
Nature Energy 3 (3), 236-242, 2018
Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering
W Guo, A Bondi, C Cornet, A Létoublon, O Durand, T Rohel, ...
Applied Surface Science 258 (7), 2808-2815, 2012
Spin-induced forbidden evanescent states in III-V semiconductors
N Rougemaille, HJ Drouhin, S Richard, G Fishman, AK Schmid
Physical review letters 95 (18), 186406, 2005
Structure of spin-split evanescent states in the fundamental gap of zinc-blende-type semiconductors
S Richard, HJ Drouhin, N Rougemaille, G Fishman
Journal of applied physics 97 (8), 083706, 2005
30-band method for quantum semiconductor heterostructures
S Boyer-Richard, F Raouafi, A Bondi, L Pedesseau, C Katan, JM Jancu, ...
Applied Physics Letters 98 (25), 251913, 2011
Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD
L Pedesseau, J Even, A Bondi, W Guo, S Richard, H Folliot, C Labbé, ...
Journal of Physics D: Applied Physics 41 (16), 165505, 2008
Atomistic simulations of the optical absorption of type-II CdSe/ZnTe superlattices
S Boyer-Richard, C Robert, L Gérard, JP Richters, R André, J Bleuse, ...
Nanoscale research letters 7 (1), 1-5, 2012
Erratum: Energy-band structure of Ge, Si, and GaAs: A thirty-band method [Phys. Rev. B 70, 235204 (2004)]
S Richard, F Aniel, G Fishman
Physical Review B 71 (16), 169901, 2005
Modélisation Physique de la structure électronique, du transport et de l'ionisation par choc dans les matériaux IV-IV massifs, contraints et dans les puits quantiques
S Richard
Université Paris Sud-Paris XI, 2004
Theoretical insights into hybrid perovskites for photovoltaic applications
J Even, S Boyer-Richard, M Carignano, L Pedesseau, JM Jancu, C Katan
Physics and Simulation of Optoelectronic Devices XXIV 9742, 97421A, 2016
Light emitting diodes on silicon substrates: preliminary results
A Bondi, W Guo, L Pedesseau, S Boyer‐Richard, H Folliot, N Chevalier, ...
physica status solidi c 6 (10), 2212-2216, 2009
First step to Si photonics: synthesis of quantum dot light‐emitters on GaP substrate by MBE
W Guo, A Bondi, C Cornet, H Folliot, A Létoublon, S Boyer‐Richard, ...
physica status solidi c 6 (10), 2207-2211, 2009
Detection of THz electromagnetic radiation with Si/SiGe HFET
S Richard, N Zerounian, P Boucaud, JM Ortega, T Hackbarth, HJ Herzog, ...
Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005
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