| Direct growth of a GaInP/GaAs/Si triple‐junction solar cell with 22.3% AM1. 5g efficiency M Feifel, D Lackner, J Ohlmann, J Benick, M Hermle, F Dimroth Solar RRL 3 (12), 1900313, 2019 | 73 | 2019 |
| Gallium phosphide window layer for silicon solar cells M Feifel, T Rachow, J Benick, J Ohlmann, S Janz, M Hermle, F Dimroth, ... IEEE Journal of Photovoltaics 6 (1), 384-390, 2015 | 71 | 2015 |
| Direct growth of III–V/silicon triple-junction solar cells with 19.7% efficiency M Feifel, J Ohlmann, J Benick, M Hermle, J Belz, A Beyer, K Volz, ... IEEE Journal of Photovoltaics 8 (6), 1590-1595, 2018 | 69 | 2018 |
| MOVPE grown gallium phosphide–silicon heterojunction solar cells M Feifel, J Ohlmann, J Benick, T Rachow, S Janz, M Hermle, F Dimroth, ... IEEE Journal of Photovoltaics 7 (2), 502-507, 2017 | 68 | 2017 |
| Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic AlxGa1−xAsyP1−y Step‐Graded … M Feifel, D Lackner, J Schön, J Ohlmann, J Benick, G Siefer, F Predan, ... Solar RRL 5 (5), 2000763, 2021 | 48 | 2021 |
| Influence of metal–organic vapor phase epitaxy reactor environment on the silicon bulk lifetime J Ohlmann, M Feifel, T Rachow, J Benick, S Janz, F Dimroth, D Lackner IEEE Journal of Photovoltaics 6 (6), 1668-1672, 2016 | 30 | 2016 |
| Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers M Feifel, J Ohlmann, RM France, D Lackner, F Dimroth Journal of Crystal Growth 532, 125422, 2020 | 22 | 2020 |
| Single-and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates RM France, M Feifel, J Belz, A Beyer, K Volz, J Ohlmann, D Lackner, ... Journal of Crystal Growth 506, 61-70, 2019 | 9 | 2019 |
| Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates Y Zhao, J Guo, M Feifel, HT Cheng, YC Yang, L Wang, L Chrostowski, ... Optical Materials Express 12 (3), 1131-1139, 2022 | 8 | 2022 |
| Advances in epitaxial GaInP/GaAs/Si triple junction solar cells M Feifel, D Lackner, J Ohlmann, K Volz, T Hannappel, J Benick, M Hermle, ... 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 0194-0196, 2020 | 8 | 2020 |
| A route to obtaining low-defect III–V epilayers on Si (100) utilizing MOCVD M Nandy, A Paszuk, M Feifel, C Koppka, P Kleinschmidt, F Dimroth, ... Crystal Growth & Design 21 (10), 5603-5613, 2021 | 6 | 2021 |
| Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III–V/Si dual-junctions M Kölbach, C Özen, O Höhn, D Lackner, M Feifel, FF Abdi, MM May Applied Physics Letters 119 (8), 2021 | 5 | 2021 |
| Sol. RRL 3, 1900313 (2019) M Feifel, D Lackner, J Ohlmann, J Benick, M Hermle, F Dimroth | 5 | |
| Exploring new convergences between PV technologies for high efficiency tandem solar cells: Wide band gap epitaxial CIGS top cells on silicon bottom cells with III-V … D Lincot, N Barreau, AB Slimane, T Bidaud, S Collin, M Feifel, F Dimroth, ... Proceedings Oral Presentation 1AO 2, 1, 2018 | 3 | 2018 |
| Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers S Janz, M Feifel, J Ohlmann, J Benick, C Weiss, M Hermle, AW Bett, ... 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 1902-1905, 2016 | 2 | 2016 |
| Monolithically integrated 940 nm half VCSELs on bulk Ge substrates Y Zhao, Z Wan, J Guo, YC Yang, HT Cheng, L Chrostowski, D Lackner, ... IEEE Photonics Technology Letters, 2023 | 1 | 2023 |
| Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates J Guo, Y Zhao, M Feifel, HT Cheng, YC Yang, L Chrostowski, D Lackner, ... Optical Materials Express 13 (4), 1077-1091, 2023 | 1 | 2023 |
| Monolithically integrated 940 nm VCSELs on bulk Ge substrates Z Wan, YC Yang, WH Chen, CC Chiu, Y Zhao, M Feifel, L Chrostowski, ... Optics Express 32 (4), 6609-6618, 2024 | | 2024 |
| 25 Gb/s NRZ transmission at 85° C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate YC Yang, Z Wan, GT Hsu, CC Chiu, WH Chen, M Feifel, D Lackner, ... Optics Letters 49 (3), 586-589, 2024 | | 2024 |
| Reduction of defects in GaP layers grown on Si (100) by MOCVD M Nandy, A Paszuk, M Feifel, C Koppka, P Kleinschmidt, F Dimroth, ... 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 1344-1347, 2021 | | 2021 |
