| Citric acid as a complexing agent in chemical mechanical polishing slurries for cobalt films for interconnect applications R Popuri, KV Sagi, SR Alety, BC Peethala, H Amanapu, R Patlolla, ... ECS Journal of Solid State Science and Technology 6 (9), P594, 2017 | 74 | 2017 |
| Future on-chip interconnect metallization and electromigration CK Hu, J Kelly, H Huang, K Motoyama, H Shobha, Y Ostrovski, JHC Chen, ... 2018 ieee international reliability physics symposium (irps), 4F. 1-1-4F. 1-6, 2018 | 65 | 2018 |
| Tungsten and cobalt metallization: A material study for MOL local interconnects V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 57 | 2016 |
| Experimental study of nanoscale Co damascene BEOL interconnect structures J Kelly, JHC Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 53 | 2016 |
| Ruthenium interconnect resistivity and reliability at 48 nm pitch X Zhang, H Huang, R Patlolla, W Wang, FW Mont, J Li, CK Hu, EG Liniger, ... 2016 IEEE international interconnect technology conference/advanced …, 2016 | 52 | 2016 |
| BEOL Cu CMP process evaluation for advanced technology nodes K Tanwar, D Canaperi, M Lofaro, W Tseng, R Patlolla, C Penny, ... Journal of The Electrochemical Society 160 (12), D3247, 2013 | 50 | 2013 |
| A 14 nm embedded stt-mram cmos technology D Edelstein, M Rizzolo, D Sil, A Dutta, J DeBrosse, M Wordeman, A Arceo, ... 2020 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2020 | 44 | 2020 |
| Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires CK Hu, J Kelly, JHC Chen, H Huang, Y Ostrovski, R Patlolla, B Peethala, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 44 | 2017 |
| Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node BD Briggs, CB Peethala, DL Rath, J Lee, S Nguyen, NV LiCausi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2017 | 38 | 2017 |
| BEOL process integration for the 7 nm technology node T Standaert, G Beique, HC Chen, ST Chen, B Hamieh, J Lee, ... 2016 IEEE international interconnect technology conference/advanced …, 2016 | 37 | 2016 |
| Cleaning solutions for ultrathin Co barriers for advanced technology nodes SR Alety, URK Lagudu, R Popuri, R Patlolla, CVVS Surisetty, SV Babu ECS Journal of Solid State Science and Technology 6 (9), P671, 2017 | 31 | 2017 |
| Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node T Nogami, X Zhang, J Kelly, B Briggs, H You, R Patlolla, H Huang, ... 2017 Symposium on VLSI Technology, T148-T149, 2017 | 25 | 2017 |
| Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes T Nogami, BD Briggs, S Korkmaz, M Chae, C Penny, J Li, W Wang, ... 2015 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2015 | 23 | 2015 |
| CVD-Co/Cu (Mn) integration and reliability for 10 nm node T Nogami, M He, X Zhang, K Tanwar, R Patlolla, J Kelly, D Rath, ... 2013 IEEE International Interconnect Technology Conference-IITC, 1-3, 2013 | 22 | 2013 |
| Selective and non-selective barrier layer wet removal BD Briggs, EE Huang, RR Patlolla, CB Peethala, DL Rath, H Shobha US Patent 9,685,406, 2017 | 19 | 2017 |
| IEEE International Interconnect Technology Conference J Kelly, JHC Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, ... Advanced Metallization Conference (IITC/AMC)(San Jose, CA, United States of …, 2016 | 19 | 2016 |
| Bottom electrode for MRAM applications P Bhosale, RR Patlolla, M Rizzolo, CC Yang US Patent 10,096,769, 2018 | 16 | 2018 |
| Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines T Nogami, R Patlolla, J Kelly, B Briggs, H Huang, J Demarest, J Li, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 16 | 2017 |
| Methods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond X Zhang, H Huang, R Patlolla, FW Mont, X Lin, M Raymond, C Labelle, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 16 | 2017 |
| CMP development for Ru liner structures beyond 14nm RR Patlolla, K Motoyama, B Peethala, T Standaert, D Canaperi, ... ECS Journal of Solid State Science and Technology 7 (8), P397, 2018 | 14 | 2018 |
