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Kotb Jabeur
Kotb Jabeur
IBM RESEARCH, USA
Verified email at ecyl-it.com
Title
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Cited by
Year
Ultra-fast and high-reliability SOT-MRAM: From cache replacement to normally-off computing
G Prenat, K Jabeur, P Vanhauwaert, G Di Pendina, F Oboril, R Bishnoi, ...
IEEE Transactions on Multi-Scale Computing Systems 2 (1), 49-60, 2015
1912015
Spin orbit torque non-volatile flip-flop for high speed and low energy applications
K Jabeur, G Di Pendina, F Bernard-Granger, G Prenat
IEEE electron device letters 35 (3), 408-410, 2014
1052014
Beyond STT-MRAM, spin orbit torque RAM SOT-MRAM for high speed and high reliability applications
G Prenat, K Jabeur, G Di Pendina, O Boulle, G Gaudin
Spintronics-based Computing, 145-157, 2015
702015
Non-volatile memory cell
G Di Pendina, K Jabeur
US Patent App. 14/446,044, 2015
452015
Compact modeling of a magnetic tunnel junction based on spin orbit torque
K Jabeur, G Di Pendina, G Prenat, LD Buda-Prejbeanu, B Dieny
IEEE transactions on magnetics 50 (7), 1-8, 2014
412014
Study of two writing schemes for a magnetic tunnel junction based on spin orbit torque
K Jabeur, LD Buda-Prejbeanu, G Prenat, G Di Pendina
International Journal of Electrical and Computer Engineering 7 (8), 1054-1059, 2013
302013
Comparison of Verilog‐A compact modelling strategies for spintronic devices
K Jabeur, F Bernard‐Granger, G Di Pendina, G Prenat, B Dieny
Electronics letters 50 (19), 1353-1355, 2014
282014
SPITT: A magnetic tunnel junction SPICE compact model for STT-MRAM
F Bernard-Granger, B Dieny, R Fascio, K Jabeur
Proceedings of the MOS-AK Workshop of the Design, Automation & Test in …, 2015
232015
Compact model of a three-terminal MRAM device based on spin orbit torque switching
K Jabeur, G Prenat, G Di Pendina, LD Buda-Prejbeanu, IL Prejbeanu, ...
2013 International Semiconductor Conference Dresden-Grenoble (ISCDG), 1-4, 2013
202013
Spintronics-based computing
G Prenat, K Jabeur, G Di Pendina, O Boulle, G Gaudin, W Zhao
Spin orbit torque RAM SOT-MRAM for high speed and high reliability …, 2015
182015
Ultra‐energy‐efficient CMOS/magnetic non‐volatile flip‐flop based on spin‐orbit torque device
K Jabeur, G Di Pendina, G Prenat
Electronics Letters 50 (8), 585-587, 2014
182014
Fine-grain reconfigurable logic cells based on double-gate CNTFETs
K Jabeur, N Yakymets, I O'Connor, S Le-Beux
Proceedings of the 21st edition of the great lakes symposium on Great lakes …, 2011
162011
Ambipolar double-gate FET binary-decision-diagram (Am-BDD) for reconfigurable logic cells
K Jabeur, N Yakymets, I O'Connor, S Le Beux
2011 IEEE/ACM International Symposium on Nanoscale Architectures, 162-168, 2011
142011
Reducing transistor count in clocked standard cells with ambipolar double-gate FETs
K Jabeur, D Navarro, I O'Connor, PE Gaillardon, MHB Jamaa, F Clermidy
2010 IEEE/ACM International Symposium on Nanoscale Architectures, 47-52, 2010
142010
Study of spin transfer torque (STT) and spin orbit torque (SOT) magnetic tunnel junctions (MTJS) at advanced CMOS technology nodes
K Jabeur, G Pendina, G Prenat
Electr. Electron. Eng. Int. J 6, 01-09, 2017
132017
High performance 4: 1 multiplexer with ambipolar double-gate FETs
K Jabeur, I O'Connor, N Yakymets, S Le Beux
2011 18th IEEE International Conference on Electronics, Circuits, and …, 2011
102011
Ambipolar independent double gate FET (Am-IDGFET) for the design of compact logic structures
K Jabeur, I O’Connor, S Le Beux
IEEE Transactions on Nanotechnology 13 (6), 1063-1073, 2014
92014
Ambipolar independent double gate FET logic
I O'Connor, K Jabeur, S Le Beux, D Navarro
Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale …, 2012
82012
Tunable reference system with sense amplifier offset cancellation for magnetic random access memory
K Jabeur, JK DeBrosse
US Patent 10,741,232, 2020
62020
Reducing system power consumption using check-pointing on nonvolatile embedded magnetic random access memories
C Layer, L Becker, K Jabeur, S Claireux, B Dieny, G Prenat, GD Pendina, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 12 (4), 1-24, 2016
62016
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