| Absorption and transmission of light in III–V nanowire arrays for tandem solar cell applications N Anttu, V Dagytė, X Zeng, G Otnes, M Borgström Nanotechnology 28 (20), 205203, 2017 | 43 | 2017 |
| InxGa1–xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc G Otnes, M Heurlin, X Zeng, MT Borgstrom Nano letters 17 (2), 702-707, 2017 | 40 | 2017 |
| Intersubband quantum disc-in-nanowire photodetectors with normal-incidence response in the long-wavelength infrared M Karimi, M Heurlin, S Limpert, V Jain, X Zeng, I Geijselaers, A Nowzari, ... Nano letters 18 (1), 365-372, 2018 | 39 | 2018 |
| InP/GaInP nanowire tunnel diodes X Zeng, G Otnes, M Heurlin, RT Mourão, MT Borgström Nano Research 11, 2523-2531, 2018 | 34 | 2018 |
| Carrier recombination processes in gallium indium phosphide nanowires W Zhang, X Zeng, X Su, X Zou, PA Mante, MT Borgstrom, A Yartsev Nano Letters 17 (7), 4248-4254, 2017 | 29 | 2017 |
| Nanobeam X-ray fluorescence dopant mapping reveals dynamics of in situ Zn-doping in nanowires A Troian, G Otnes, X Zeng, L Chayanun, V Dagyte, S Hammarberg, ... Nano letters 18 (10), 6461-6468, 2018 | 23 | 2018 |
| High responsivity of InP/InAsP nanowire array broadband photodetectors enhanced by optical gating M Karimi, X Zeng, B Witzigmann, L Samuelson, MT Borgstrom, ... Nano Letters 19 (12), 8424-8430, 2019 | 18 | 2019 |
| Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires X Su, X Zeng, H Němec, X Zou, W Zhang, MT Borgström, A Yartsev Nanoscale 11 (40), 18550-18558, 2019 | 18 | 2019 |
| Growth kinetics of GaxIn (1− x) P nanowires using triethylgallium as Ga precursor V Dagytė, M Heurlin, X Zeng, MT Borgström Nanotechnology 29 (39), 394001, 2018 | 14 | 2018 |
| Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse RJ Jam, JP Beech, X Zeng, J Johansson, L Samuelson, H Pettersson, ... Nanotechnology 31 (20), 204002, 2020 | 13 | 2020 |
| Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate V Dagytė, E Barrigón, W Zhang, X Zeng, M Heurlin, G Otnes, N Anttu, ... Nanotechnology 28 (50), 505706, 2017 | 12 | 2017 |
| The anisotropic distribution of dislocations and tilts in metamorphic GaInAs/AlInAs buffers grown on GaAs substrates with miscut angles toward (1 1 1) A Y Sun, K Li, J Dong, X Zeng, S Yu, Y Zhao, C Zhao, H Yang Journal of alloys and compounds 597, 45-49, 2014 | 11 | 2014 |
| Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers KL Li, YR Sun, JR Dong, YM Zhao, SZ Yu, CY Zhao, XL Zeng, H Yang Journal of crystal growth 380, 261-267, 2013 | 10 | 2013 |
| Gain and bandwidth of InP nanowire array photodetectors with embedded photogated InAsP quantum discs H Jeddi, M Karimi, B Witzigmann, X Zeng, L Hrachowina, MT Borgström, ... Nanoscale 13 (12), 6227-6233, 2021 | 8 | 2021 |
| Electrical and optical evaluation of n-type doping in InxGa (1− x) P nanowires X Zeng, RT Mourão, G Otnes, O Hultin, V Dagytė, M Heurlin, ... Nanotechnology 29 (25), 255701, 2018 | 8 | 2018 |
| InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells Y Zhao, J Dong, K Li, Y Sun, X Zeng, Y He, S Yu, H Yang Journal of Semiconductors 36 (4), 044011, 2015 | 7 | 2015 |
| Three-dimensional imaging of beam-induced biasing of InP/GaInP tunnel diodes C Cordoba, X Zeng, D Wolf, A Lubk, E Barrigón, MT Borgstrom, ... Nano Letters 19 (6), 3490-3497, 2019 | 6 | 2019 |
| Nanowire photodetectors with embedded quantum heterostructures for infrared detection M Karimi, M Heurlin, S Limpert, V Jain, E Mansouri, X Zeng, L Samuelson, ... Infrared Physics & Technology 96, 209-212, 2019 | 6 | 2019 |
| Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates KL Li, YR Sun, JR Dong, Y He, XL Zeng, YM Zhao, SZ Yu, CY Zhao Thin Solid Films 593, 193-197, 2015 | 5 | 2015 |
| Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers Y Sun, K Li, J Dong, X Zeng, S Yu, Y Zhao, C Zhao, H Yang Journal of Materials Science: Materials in Electronics 25, 581-585, 2014 | 5 | 2014 |
