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Yordan M. Georgiev, PhD
Yordan M. Georgiev, PhD
Head of Nanofabrication, I-te of Ion Beam Phys. & Mat. Res., Helmholtz-Centrum Dresden-Rossendorf
Verified email at hzdr.de
Title
Cited by
Cited by
Year
Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist
W Henschel, YM Georgiev, H Kurz
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
2042003
New generation electron beam resists: a review
AS Gangnaik, YM Georgiev, JD Holmes
Chemistry of Materials 29 (5), 1898-1917, 2017
1662017
Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer
C Cummins, A Gangnaik, RA Kelly, D Borah, J O'Connell, N Petkov, ...
Nanoscale 7 (15), 6712-6721, 2015
642015
Observation of ultrafast solid-density plasma dynamics using femtosecond x-ray pulses from a free-electron laser
T Kluge, M Rödel, J Metzkes-Ng, A Pelka, AL Garcia, I Prencipe, ...
Physical Review X 8 (3), 031068, 2018
512018
Organo-arsenic molecular layers on silicon for high-density doping
J O’Connell, GA Verni, A Gangnaik, M Shayesteh, B Long, YM Georgiev, ...
ACS applied materials & interfaces 7 (28), 15514-15521, 2015
492015
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu
Sensors and Actuators B: Chemical 183, 1-10, 2013
462013
Highly selective etch process for silicon-on-insulator nano-devices
T Wahlbrink, T Mollenhauer, YM Georgiev, W Henschel, JK Efavi, ...
Microelectronic Engineering 78, 212-217, 2005
432005
Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist
YM Georgiev, W Henschel, A Fuchs, H Kurz
Vacuum 77 (2), 117-123, 2005
422005
Interferometric in situ alignment for UV-based nanoimprint
A Fuchs, B Vratzov, T Wahlbrink, Y Georgiev, H Kurz
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
352004
Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists
A Gangnaik, YM Georgiev, B McCarthy, N Petkov, V Djara, JD Holmes
Microelectronic engineering 123, 126-130, 2014
332014
A wired-AND transistor: Polarity controllable FET with multiple inputs
M Simon, J Trommer, B Liang, D Fischer, T Baldauf, MB Khan, A Heinzig, ...
2018 76th Device Research Conference (DRC), 1-2, 2018
322018
Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors
E Buitrago, MFB Badia, YM Georgiev, R Yu, O Lotty, JD Holmes, ...
Sensors and Actuators B: Chemical 199, 291-300, 2014
292014
Parallel arrays of sub-10 nm aligned germanium nanofins from an in situ metal oxide hardmask using directed self-assembly of block copolymers
C Cummins, A Gangnaik, RA Kelly, AJ Hydes, J O’Connell, N Petkov, ...
Chemistry of Materials 27 (17), 6091-6096, 2015
282015
Supercritical drying process for high aspect-ratio HSQ nano-structures
T Wahlbrink, D Küpper, YM Georgiev, J Bolten, M Möller, D Küpper, ...
Microelectronic engineering 83 (4-9), 1124-1127, 2006
262006
Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion
R Duffy, M Shayesteh, K Thomas, E Pelucchi, R Yu, A Gangnaik, ...
Journal of Materials Chemistry C 2 (43), 9248-9257, 2014
252014
Junctionless nanowire transistor fabricated with high mobility Ge channel
R Yu, YM Georgiev, S Das, RG Hobbs, IM Povey, N Petkov, M Shayesteh, ...
physica status solidi (RRL)–Rapid Research Letters 8 (1), 65-68, 2014
242014
Solvent vapor annealing of block copolymers in confined topographies: Commensurability considerations for nanolithography
C Cummins, RA Kelly, A Gangnaik, YM Georgiev, N Petkov, JD Holmes, ...
Macromolecular Rapid Communications 36 (8), 762-767, 2015
212015
Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices
YM Georgiev, N Petkov, B McCarthy, R Yu, V Djara, D O’Connell, O Lotty, ...
Microelectronic engineering 118, 47-53, 2014
212014
Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
B Long, GA Verni, J O’Connell, M Shayesteh, A Gangnaik, YM Georgiev, ...
Materials Science in Semiconductor Processing 62, 196-200, 2017
202017
Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires
MB Khan, D Deb, J Kerbusch, F Fuchs, M Löffler, S Banerjee, U Mühle, ...
Applied Sciences 9 (17), 3462, 2019
192019
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