Ion-enrichment and ion-depletion effect of nanochannel structures Q Pu, J Yun, H Temkin, S Liu
Nano letters 4 (6), 1099-1103, 2004
634 2004 Ignition studies of L Menon, S Patibandla, KB Ram, SI Shkuratov, D Aurongzeb, M Holtz, ...
Applied physics letters 84 (23), 4735-4737, 2004
95 2004 Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition G Kipshidze, B Yavich, A Chandolu, J Yun, V Kuryatkov, I Ahmad, ...
Applied Physics Letters 86 (3), 033104, 2005
93 2005 Thin-film thermal conductivity measurement using microelectrothermal test structures and finite-element-model-based data analysis N Stojanovic, J Yun, EBK Washington, JM Berg, MW Holtz, H Temkin
Journal of microelectromechanical systems 16 (5), 1269-1275, 2007
85 2007 Evolution of surface roughness of AlN and GaN induced by inductively coupled K Zhu, V Kuryatkov, B Borisov, J Yun, G Kipshidze, SA Nikishin, H Temkin, ...
Journal of applied physics 95 (9), 4635-4641, 2004
67 2004 Plasma etching transfer of a nanoporous pattern on a generic substrate L Menon, KB Ram, S Patibandla, D Aurongzeb, M Holtz, J Yun, ...
Journal of The Electrochemical Society 151 (7), C492, 2004
30 2004 Semiconductor structure including a ferroelectric transistor and method for the formation thereof R Van Bentum, J Yun, SEO Seunghwan, J Schmid
US Patent 9,293,556, 2016
28 2016 Semiconductor memory device and method of operating the same KW Kim, JS Yun
US Patent 7,978,559, 2011
21 2011 Influence of nanocrystal growth kinetics on interface roughness in nickel–aluminum multilayers D Aurongzeb, M Holtz, M Daugherty, JM Berg, A Chandolu, J Yun, ...
Applied physics letters 83 (26), 5437-5439, 2003
19 2003 Low-resistance Ohmic contacts to digital alloys of n-AlGaN/AlN J Yun, K Choi, K Mathur, V Kuryatkov, B Borisov, G Kipshidze, S Nikishin, ...
IEEE electron device letters 27 (1), 22-24, 2005
18 2005 Low-variation SRAM bitcells in 22nm FDSOI technology V Joshi, H Ramamurthy, S Balasubramanian, S Seo, H Yoon, X Zou, ...
2017 Symposium on VLSI Technology, T222-T223, 2017
15 2017 Semiconductor memory device and method of operating the same KW Kim, JS Yun
US Patent 7,978,554, 2011
14 2011 MBIST Support for Reliable eMRAM Sensing J Yun, B Nadeau-Dostie, M Keim, C Dray, M Boujamaa
2020 IEEE European Test Symposium (ETS), 1-6, 2020
8 2020 Semiconductor structure including a ferroelectric transistor and method for the formation thereof R Van Bentum, J Yun, SEO Seunghwan, J Schmid
US Patent 9,536,992, 2017
8 2017 MBIST-supported Trim Adjustment to Compensate Thermal Behavior of MRAM C Münch, J Yun, M Keim, MB Tahoori
2021 IEEE European Test Symposium (ETS), 1-6, 2021
7 2021 Method and apparatus for bit-line sensing gates on an SRAM cell SEO Seunghwan, J Yun
US Patent 9,224,455, 2015
7 2015 MBIST Supported Multi Step Trim for Reliable eMRAM Sensing J Yun, B Nadeau-Dostie, M Keim, L Schramm, C Dray, M Boujamaa, ...
2020 IEEE International Test Conference (ITC), 1-5, 2020
6 2020 Micro-Raman Scattering From Hexagonal GaN, AlN, and Alx Ga1−x }N Grown on (111) Oriented Silicon: Stress Mapping of Cracks C Ramkumar, T Prokofyeva, M Seon, M Holtz, K Choi, J Yun, SA Nikishin, ...
MRS Online Proceedings Library 693, 39-43, 2001
6 2001 Smart Hammering: A practical method of pinhole detection in MRAM memories SB Mamaghani, C Münch, J Yun, M Keim, MB Tahoori
2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-6, 2023
4 2023 Preparation of optoelectronic devices based on AlN/AlGaN superlattices M Holtz, G Kipshidze, A Chandolu, J Yun, B Borisov, V Kuryatkov, K Zhu, ...
MRS Online Proceedings Library (OPL) 744, 2002
4 2002 