| Annealing effects on the microstructure and photoluminescence properties of Ni-doped ZnO films DJ Qiu, HZ Wu, AM Feng, YF Lao, NB Chen, TN Xu Applied surface science 222 (1-4), 263-268, 2004 | 86 | 2004 |
| Tunable hot-carrier photodetection beyond the bandgap spectral limit YF Lao, AGU Perera, LH Li, SP Khanna, EH Linfield, HC Liu Nature Photonics 8 (5), 412-418, 2014 | 79 | 2014 |
| Light-hole and heavy-hole transitions for high-temperature long-wavelength infrared detection YF Lao, P Pitigala, AGU Perera, HC Liu, M Buchanan, ZR Wasilewski, ... Applied Physics Letters 97 (9), 2010 | 56 | 2010 |
| Room temperature continuous-wave operation of InAs∕ InP (100) quantum dot lasers grown by gas-source molecular-beam epitaxy SG Li, Q Gong, YF Lao, K He, J Li, YG Zhang, SL Feng, HL Wang Applied Physics Letters 93 (11), 2008 | 56 | 2008 |
| InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency YF Lao, S Wolde, AG Unil Perera, YH Zhang, TM Wang, HC Liu, JO Kim, ... Applied Physics Letters 103 (24), 2013 | 49 | 2013 |
| Experimental observation of large ramified Au aggregates on melting glass surfaces GX Ye, AG Xia, GL Gao, YF Lao, XM Tao Physical Review B 63 (12), 125405, 2001 | 46 | 2001 |
| Transparent thin-film transistors using ZnMgO as dielectrics and channel H Wu, J Liang, G Jin, Y Lao, T Xu IEEE transactions on electron devices 54 (11), 2856-2859, 2007 | 45 | 2007 |
| Two-color quantum dot laser with tunable wavelength gap SG Li, Q Gong, YF Lao, HD Yang, S Gao, P Chen, YG Zhang, SL Feng, ... Applied Physics Letters 95 (25), 2009 | 38 | 2009 |
| Dielectric function model for p-type semiconductor inter-valence band transitions YF Lao, AG Unil Perera Journal of Applied Physics 109 (10), 2011 | 35 | 2011 |
| Temperature-dependent internal photoemission probe for band parameters YF Lao, AGU Perera Physical Review B 86 (19), 195315, 2012 | 31 | 2012 |
| Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films RC Jayasinghe, YF Lao, AGU Perera, M Hammar, CF Cao, HZ Wu Journal of Physics: Condensed Matter 24 (43), 435803, 2012 | 31 | 2012 |
| Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors S Wolde, YF Lao, AG Unil Perera, YH Zhang, TM Wang, JO Kim, ... Journal of Applied Physics 121 (24), 2017 | 28 | 2017 |
| Anomalous electrical conductivity of a gold thin film percolation system XM Tao, GX Ye, QL Ye, JS Jin, YF Lao, ZK Jiao Physical Review B 66 (11), 115406, 2002 | 27 | 2002 |
| Structural and electrical properties of an Au film system deposited on silicone oil surfaces B Yang, AG Xia, JS Jin, QL Ye, YF Lao, ZK Jiao, GX Ye Journal of Physics: Condensed Matter 14 (43), 10051, 2002 | 25 | 2002 |
| Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs HP Lei, HZ Wu, YF Lao, M Qi, AZ Li, WZ Shen Journal of crystal growth 256 (1-2), 96-102, 2003 | 24 | 2003 |
| Vascular architecture of the human optic chiasma and bitemporal hemianopia. Y Lao, H Gao, Y Zhong Chinese Medical Sciences Journal= Chung-kuo i Hsueh k'o Hsueh tsa Chih 9 (1 …, 1994 | 21 | 1994 |
| Band offsets and carrier dynamics of type-II InAs/GaSb superlattice photodetectors studied by internal photoemission spectroscopy YF Lao, P Pitigala, AG Unil Perera, E Plis, SS Krishna, ... Applied Physics Letters 103 (18), 2013 | 18 | 2013 |
| InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p-type valence-band intersublevel transitions AGU Perera, YF Lao, S Wolde, YH Zhang, TM Wang, JO Kim, ... Infrared Physics & Technology 70, 15-19, 2015 | 17 | 2015 |
| Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors YF Lao, S Wolde, AG Unil Perera, YH Zhang, TM Wang, JO Kim, ... Applied Physics Letters 104 (17), 2014 | 14 | 2014 |
| InAsP/InGaAsP quantum-well 1.3 µm vertical-cavity surface-emitting lasers YF Lao, CF Cao, HZ Wu, M Cao, Q Gong Electronics letters 45 (2), 105-107, 2009 | 13 | 2009 |
