Thomas Henke
Thomas Henke
TU Dresden, Institute of Semiconductors and Microsystems (IHM)
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Atomic layer deposition for high aspect ratio through silicon vias
M Knaut, M Junige, V Neumann, H Wojcik, T Henke, C Hossbach, A Hiess, ...
Microelectronic Engineering 107, 80-83, 2013
Flash-enhanced atomic layer deposition: basics, opportunities, review, and principal studies on the flash-enhanced growth of thin films
T Henke, M Knaut, C Hossbach, M Geidel, L Rebohle, M Albert, ...
ECS Journal of Solid State Science and Technology 4 (7), P277, 2015
Growth of aluminum oxide thin films with enhanced film density by the integration of in situ flash annealing into low-temperature atomic layer deposition
T Henke, M Knaut, C Hossbach, M Geidel, M Albert, JW Bartha
Surface and Coatings Technology 309, 600-608, 2017
Formation of regularly arranged large grain silicon islands by using embedded micro mirrors in the flash crystallization of amorphous silicon
T Henke, JW Bartha, L Rebohle, U Merkel, R Huebner, M Albert, ...
Journal of Applied Physics 115 (3), 034301, 2014
Atomic layer deposition of tantalum oxide thin films using the precursor tert-butylimido-tris-ethylmethylamido-tantalum and water: Process characteristics and film …
T Henke, M Knaut, M Geidel, F Winkler, M Albert, JW Bartha
Thin Solid Films 627, 94-105, 2017
Low‐thermal budget flash light annealing for Al2O3 surface passivation
DK Simon, T Henke, PM Jordan, FPG Fengler, T Mikolajick, JW Bartha, ...
physica status solidi (RRL)–Rapid Research Letters 9 (11), 631-635, 2015
Flash-lamp-enhanced atomic layer deposition of thin films
T Henke, M Knaut, C Hossbach, M Geidel, L Rebohle, M Albert, ...
ECS Transactions 64 (9), 167, 2014
Untersuchungen zum Einsatz des ms-Blitzlampentemperns bei der Atomlagenabscheidung von dünnen Schichten und für die Rekristallisation von amorphem Silizium
T Henke
Full presentation can be viewed here: https://www. youtube. com/watch? v= f3OikQFsHkw
C Hossbach, AA Günther, B Lüssem, M Sawatzki, T Henke, M Knaut, ...
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