Henning Riechert
Henning Riechert
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Zitiert von
Zitiert von
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
B Heying, R Averbeck, LF Chen, E Haus, H Riechert, JS Speck
Journal of Applied Physics 88 (4), 1855-1860, 2000
Silicon-nanowire transistors with intruded nickel-silicide contacts
WM Weber, L Geelhaar, AP Graham, E Unger, GS Duesberg, M Liebau, ...
Nano letters 6 (12), 2660-2666, 2006
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
M Hetterich, MD Dawson, AY Egorov, D Bernklau, H Riechert
Applied Physics Letters 76 (8), 1030-1032, 2000
Monolithic VCSEL with InGaAsN active region emitting at 1.28/spl mu/m and CW output power exceeding 500/spl mu/W at room temperature
G Steinle, H Riechert, AY Egorov
Electronics Letters 37 (2), 93-95, 2001
Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications
S Breuer, C Pfüller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ...
Nano letters 11 (3), 1276-1279, 2011
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers
R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
IEEE Journal of selected topics in quantum electronics 8 (4), 801-810, 2002
Direct comparison of catalyst-free and catalyst-induced GaN nanowires
C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ...
Nano Research 3 (7), 528-536, 2010
Development of InGaAsN-based 1.3 μm VCSELs
H Riechert, A Ramakrishnan, G Steinle
Semiconductor science and technology 17 (8), 892, 2002
8 W continuous wave operation of InGaAsN lasers at 1.3 µm
DA Livshits, AY Egorov, H Riechert
Electronics Letters 36 (16), 1381-1382, 2000
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
V Consonni, M Knelangen, L Geelhaar, A Trampert, H Riechert
Physical Review B 81 (8), 085310, 2010
Theoretical and experimental analysis of 1.3-/spl mu/m InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
IEEE Journal of selected topics in quantum electronics 9 (5), 1228-1238, 2003
Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data
M Schuster, PO Gervais, B Jobst, W Hösler, R Averbeck, H Riechert, ...
Journal of Physics D: Applied Physics 32 (10A), A56, 1999
The nanorod approach: GaN NanoLEDs for solid state lighting
A Waag, X Wang, S Fündling, J Ledig, M Erenburg, R Neumann, ...
physica status solidi (c) 8 (7‐8), 2296-2301, 2011
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC (0001)
F Fromm, MH Oliveira Jr, A Molina-Sanchez, M Hundhausen, JMJ Lopes, ...
New Journal of Physics 15 (4), 043031, 2013
Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy
G Koblmueller, R Averbeck, L Geelhaar, H Riechert, W Hösler, P Pongratz
Journal of applied physics 93 (12), 9591-9596, 2003
Recombination mechanisms in GaInNAs/GaAs multiple quantum wells
A Kaschner, T Lüttgert, H Born, A Hoffmann, AY Egorov, H Riechert
Applied Physics Letters 78 (10), 1391-1393, 2001
Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer
V Consonni, M Hanke, M Knelangen, L Geelhaar, A Trampert, H Riechert
Physical Review B 83 (3), 035310, 2011
High power CW operation of InGaAsN lasers at 1.3 µm
AY Egorov, D Bernklau, D Livshits, V Ustinov, ZI Alferov, H Riechert
Electronics Letters 35 (19), 1643-1644, 1999
Formation of high-quality quasi-free-standing bilayer graphene on SiC (0 0 0 1) by oxygen intercalation upon annealing in air
MH Oliveira Jr, T Schumann, F Fromm, R Koch, M Ostler, M Ramsteiner, ...
Carbon 52, 83-89, 2013
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ...
Physical Review B 85 (4), 045323, 2012
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