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Arthur Witulski
Arthur Witulski
Research Professor Electrical Engineering, Vanderbilt University
Bestätigte E-Mail-Adresse bei vanderbilt.edu
Titel
Zitiert von
Zitiert von
Jahr
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
11332018
Charge collection and charge sharing in a 130 nm CMOS technology
OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ...
IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006
4732006
Large signal stability criteria for distributed systems with constant power loads
M Belkhayat, R Cooley, A Witulski
Proceedings of PESC'95-Power Electronics Specialist Conference 2, 1333-1338, 1995
2681995
A comparison of resonant topologies in high voltage DC applications
SD Johnson, AF Witulski, RW Erickson
1987 2nd IEEE Applied Power Electronics Conference and Exposition, 145-156, 1987
2621987
Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies
B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ...
IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007
2242007
Introduction to modeling of transformers and coupled inductors
AF Witulski
IEEE Transactions on Power Electronics 10 (3), 349-357, 1995
2021995
Models and algorithmic limits for an ECC-based approach to hardening sub-100-nm SRAMs
MA Bajura, Y Boulghassoul, R Naseer, S DasGupta, AF Witulski, ...
IEEE Transactions on Nuclear Science 54 (4), 935-945, 2007
1782007
On-chip characterization of single-event transient pulsewidths
B Narasimham, V Ramachandran, BL Bhuva, RD Schrimpf, AF Witulski, ...
IEEE Transactions on Device and Materials Reliability 6 (4), 542-549, 2006
1692006
Extension of state space averaging to resonant switches-and beyond
AF Witulski, RW Erickson
20th annual ieee power electronics specialists conference, 476-483, 1989
1551989
Critical charge characterization for soft error rate modeling in 90nm SRAM
R Naseer, Y Boulghassoul, J Draper, S DasGupta, A Witulski
2007 IEEE International Symposium on Circuits and Systems (ISCAS), 1879-1882, 2007
1542007
A hardened-by-design technique for RF digital phase-locked loops
TD Loveless, LW Massengill, BL Bhuva, WT Holman, AF Witulski, ...
IEEE transactions on nuclear science 53 (6), 3432-3438, 2006
1422006
Single event upsets in deep-submicrometer technologies due to charge sharing
OA Amusan, LW Massengill, MP Baze, AL Sternberg, AF Witulski, ...
IEEE Transactions on Device and Materials Reliability 8 (3), 582-589, 2008
1402008
HBD layout isolation techniques for multiple node charge collection mitigation
JD Black, AL Sternberg, ML Alles, AF Witulski, BL Bhuva, LW Massengill, ...
IEEE transactions on nuclear science 52 (6), 2536-2541, 2005
1352005
Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS
S DasGupta, AF Witulski, BL Bhuva, ML Alles, RA Reed, OA Amusan, ...
IEEE Transactions on Nuclear Science 54 (6), 2407-2412, 2007
1312007
Small signal equivalent circuit modeling of resonant converters
AF Witulski, AF Hernandez, RW Erickson
IEEE Transactions on Power Electronics 6 (1), 11-27, 1991
1291991
Layout technique for single-event transient mitigation via pulse quenching
NM Atkinson, AF Witulski, WT Holman, JR Ahlbin, BL Bhuva, ...
IEEE Transactions on Nuclear Science 58 (3), 885-890, 2011
1232011
Design techniques to reduce SET pulse widths in deep-submicron combinational logic
OA Amusan, LW Massengill, BL Bhuva, S DasGupta, AF Witulski, ...
IEEE Transactions on Nuclear Science 54 (6), 2060-2064, 2007
1232007
Single-event burnout mechanisms in SiC power MOSFETs
AF Witulski, DR Ball, KF Galloway, A Javanainen, JM Lauenstein, ...
IEEE Transactions on Nuclear Science 65 (8), 1951-1955, 2018
1212018
Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology
BD Olson, OA Amusan, S Dasgupta, LW Massengill, AF Witulski, ...
IEEE Transactions on Nuclear Science 54 (4), 894-897, 2007
1212007
The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process
JR Ahlbin, MJ Gadlage, DR Ball, AW Witulski, BL Bhuva, RA Reed, ...
IEEE Transactions on Nuclear Science 57 (6), 3380-3385, 2010
1182010
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