| Boundary conditions and interface states in heterostructures W Trzeciakowski Physical Review B 38 (6), 4322, 1988 | 68 | 1988 |
| Tailoring the intersubband absorption in quantum wells W Trzeciakowski, BD McCombe Applied physics letters 55 (9), 891-893, 1989 | 63 | 1989 |
| Effective-mass approximation in semiconductor heterostructures: One-dimensional analysis W Trzeciakowski Physical Review B 38 (17), 12493, 1988 | 61 | 1988 |
| Fully-screened polarization-induced electric fields in blue∕ violet InGaN∕ GaN light-emitting devices grown on bulk GaN G Franssen, T Suski, P Perlin, R Bohdan, A Bercha, W Trzeciakowski, ... Applied Physics Letters 87 (4), 2005 | 49 | 2005 |
| A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal T Suski, G Franssen, P Perlin, R Bohdan, A Bercha, P Adamiec, F Dybala, ... Applied physics letters 84 (8), 1236-1238, 2004 | 48 | 2004 |
| Electric-field effects in semiconductor quantum wells W Trzeciakowski, M Gurioli Physical Review B 44 (8), 3880, 1991 | 48 | 1991 |
| The effect of pressure on the luminescence from GaAs/AlGaAs quantum wells P Perlin, W Trzeciakowski, E Litwin-Staszewska, J Muszalski, M Micovic Semiconductor science and technology 9 (12), 2239, 1994 | 44 | 1994 |
| Pressure and temperature tuning of laser diodes W Trzeciakowski, A Bercha, F Dybala, R Bohdan, P Adamiec, O Mariani physica status solidi (b) 244 (1), 179-186, 2007 | 38 | 2007 |
| Pressure-tuned InGaAsSb∕ AlGaAsSb diode laser with 700nm tuning range P Adamiec, A Salhi, R Bohdan, A Bercha, F Dybala, W Trzeciakowski, ... Applied physics letters 85 (19), 4292-4294, 2004 | 37 | 2004 |
| Spectroscopic method of strain analysis in semiconductor quantum-well devices ML Biermann, S Duran, K Peterson, A Gerhardt, JW Tomm, A Bercha, ... Journal of applied physics 96 (8), 4056-4065, 2004 | 31 | 2004 |
| Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning R Bohdan, A Bercha, W Trzeciakowski, F Dybała, B Piechal, MB Sanayeh, ... Journal of Applied Physics 104 (6), 2008 | 27 | 2008 |
| Shallow donors in magnetic fields in zinc-blende semiconductors. I. Theory W Trzeciakowski, S Huant, LC Brunel Physical Review B 33 (10), 6846, 1986 | 27 | 1986 |
| Assessment of human gingival fibroblast proliferation after laser stimulation in vitro using different laser types and wavelengths (1064, 980, 635, 450, and 405 nm … B Sterczała, K Grzech-Leśniak, O Michel, W Trzeciakowski, M Dominiak, ... Journal of Personalized Medicine 11 (2), 98, 2021 | 26 | 2021 |
| High accuracy Raman measurements using the Stokes and anti-Stokes lines W Trzeciakowski, J Martínez-Pastor, A Cantarero Journal of applied physics 82 (8), 3976-3982, 1997 | 24 | 1997 |
| High Pressure Science and Technology AV Kornilov, VA Sukhoparov, VM Pudalov, W Trzeciakowski Ed. W. Trzeciakowski, World Scientific, Singapore, 63, 1996 | 23 | 1996 |
| Density of states in a resonant-tunneling structure W Trzeciakowski, D Sahu, TF George Physical Review B 40 (9), 6058, 1989 | 23 | 1989 |
| Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction K Pieniak, M Chlipala, H Turski, W Trzeciakowski, G Muziol, G Staszczak, ... Optics Express 29 (2), 1824-1837, 2021 | 21 | 2021 |
| The effect of pressure on deep impurity states with large lattice relaxation S Porowski, W Trzeciakowski physica status solidi (b) 128 (1), 11-22, 1985 | 21 | 1985 |
| Shallow donors in magnetic fields in zinc-blende semiconductors. II. Magneto-optical study of InSb under hydrostatic pressure LC Brunel, S Huant, W Trzeciakowski Physical Review B 33 (10), 6863, 1986 | 20 | 1986 |
| High pressure science and technology F Wang, R Ingalls, WA Trzeciakowski Proc. Joint XV AIRAPT & XXXIII EHPRG Int. Conf, 289-91, 1996 | 17 | 1996 |
