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Markus Hellenbrand
Markus Hellenbrand
Department of Materials Science & Metallurgy, University of Cambridge
Bestätigte E-Mail-Adresse bei cam.ac.uk - Startseite
Titel
Zitiert von
Zitiert von
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Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion= 10 μA/μm for Ioff= 1 nA/μm at Vds= 0.3 V
E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson
2016 IEEE International Electron Devices Meeting (IEDM), 19.1. 1-19.1. 4, 2016
1292016
Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade
E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ...
Nano letters 17 (7), 4373-4380, 2017
1012017
Scaling of vertical InAs–GaSb nanowire tunneling field-effect transistors on Si
E Memišević, J Svensson, M Hellenbrand, E Lind, LE Wernersson
IEEE Electron Device Letters 37 (5), 549-552, 2016
722016
Electrical characterization and modeling of gate-last vertical InAs nanowire MOSFETs on Si
M Berg, OP Kilpi, KM Persson, J Svensson, M Hellenbrand, E Lind, ...
IEEE Electron Device Letters 37 (8), 966-969, 2016
332016
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
OP Kilpi, M Hellenbrand, J Svensson, AR Persson, RWE Lind, ...
IEEE Electron Device Letters, 2020
292020
Impact of band-tails on the subthreshold swing of III-V tunnel field-effect transistor
E Memisevic, E Lind, M Hellenbrand, J Svensson, LE Wernersson
IEEE Electron Device Letters 38 (12), 1661-1664, 2017
292017
Low-Frequency Noise in III–V Nanowire TFETs and MOSFETs
M Hellenbrand, E Memišević, M Berg, OP Kilpi, J Svensson, ...
IEEE Electron Device Letters 38 (11), 1520-1523, 2017
232017
Low-frequency noise in nanowire and planar III-V MOSFETs
M Hellenbrand, OP Kilpi, J Svensson, E Lind, LE Wernersson
Microelectronic Engineering, 110986, 2019
172019
Protons: Critical Species for Resistive Switching in Interface‐Type Memristors
S Kunwar, CB Somodi, RA Lalk, BX Rutherford, Z Corey, P Roy, D Zhang, ...
Advanced Electronic Materials 9 (1), 2200816, 2023
162023
Vertical nanowire III–V MOSFETs with improved high-frequency gain
OP Kilpi, M Hellenbrand, J Svensson, E Lind, LE Wernersson
Electronics Letters 56 (13), 669-671, 2020
132020
Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films
JPB Silva, MC Istrate, M Hellenbrand, A Jan, MT Becker, J Symonowicz, ...
Applied Materials Today 30, 101708, 2023
112023
Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response
H Dou, X Gao, D Zhang, S Dhole, Z Qi, B Yang, MN Hasan, JH Seo, Q Jia, ...
ACS Applied Electronic Materials 3 (12), 5278-5286, 2021
112021
High performance, electroforming-free, thin film memristors using ionic Na 0.5 Bi 0.5 TiO 3
C Yun, M Webb, W Li, R Wu, M Xiao, M Hellenbrand, A Kursumovic, ...
Journal of Materials Chemistry C 9 (13), 4522-4531, 2021
112021
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
M Hellenbrand, E Lind, OP Kilpi, LE Wernersson
Solid-State Electronics, 2020
112020
Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity
M Hellenbrand, B Bakhit, H Dou, M Xiao, MO Hill, Z Sun, A Mehonic, ...
Science Advances 9 (25), eadg1946, 2023
82023
Capacitance Measurements in Vertical III–V Nanowire TFETs
M Hellenbrand, E Memisevic, J Svensson, A Krishnaraja, E Lind, ...
IEEE Electron Device Letters 39 (7), 943-946, 2018
82018
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-Gate MOSFETs
S Netsu, M Hellenbrand, CB Zota, Y Miyamoto, E Lind
IEEE Journal of the Electron Devices Society 6, 408-412, 2018
82018
1/f and RTS noise in InGaAs nanowire MOSFETs
C Möhle, CB Zota, M Hellenbrand, E Lind
Microelectronic Engineering 178, 52-55, 2017
82017
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
M Hellenbrand, J MacManus-Driscoll
Nano Convergence 10 (1), 44, 2023
72023
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
A Jönsson, J Svensson, EM Fiordaliso, E Lind, M Hellenbrand, ...
ACS Applied Electronic Materials 3 (12), 5240-5247, 2021
52021
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