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Atsushi Motogaito
Atsushi Motogaito
三重大学 大学院工学研究科 電気電子工学専攻准教授
Bestätigte E-Mail-Adresse bei elec.mie-u.ac.jp - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
K Hiramatsu, K Nishiyama, M Onishi, H Mizutani, M Narukawa, ...
Journal of Crystal Growth 221 (1-4), 316-326, 2000
5262000
Recent progress in selective area growth and epitaxial lateral overgrowth of III‐nitrides: effects of reactor pressure in MOVPE growth
K Hiramatsu, K Nishiyama, A Motogaito, H Miyake, Y Iyechika, T Maeda
physica status solidi (a) 176 (1), 535-543, 1999
3581999
Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy
H Miyake, A Motogaito, K Hiramatsu
Japanese journal of applied physics 38 (9A), L1000, 1999
1211999
Characterization of GaN Based UV‐VUV Detectors in the Range 3.4–25 eV by Using Synchrotron Radiation
A Motogaito, K Ohta, K Hiramatsu, Y Ohuchi, K Tadatomo, Y Hamamura, ...
physica status solidi (a) 188 (1), 337-340, 2001
262001
Fabrication of binary diffractive lenses and the application to LED lighting for controlling luminosity distribution
A Motogaito, K Hiramatsu
Optics and Photonics Journal 3 (1), 67-73, 2013
252013
Buried tungsten metal structure fabricated by epitaxial-lateral-overgrown GaN via low-pressure metalorganic vapor phase epitaxy
M Haino, M Yamaguchi, H Miyake, A Motogaito, K Hiramatsu, ...
Japanese Journal of Applied Physics 39 (5B), L449, 2000
252000
Buried tungsten metal structure fabricated by epitaxial-lateral-overgrown GaN via low-pressure metalorganic vapor phase epitaxy
M Haino, M Yamaguchi, H Miyake, A Motogaito, K Hiramatsu, ...
Japanese Journal of Applied Physics 39 (5B), L449, 2000
252000
Characterization of GaN-based Schottky barrier ultraviolet (UV) detectors in the UV and vacuum ultraviolet (VUV) region using synchrotron radiation
A Motogaito, M Yamaguchi, K Hiramatsu, M Kotoh, Y Ohuchi, K Tadatomo, ...
Japanese Journal of Applied Physics 40 (4B), L368, 2001
232001
High performance Schottky UV detectors (265–100 nm) using n‐Al0.5Ga0.5N on AlN epitaxial layer
H Miyake, H Yasukawa, Y Kida, K Ohta, Y Shibata, A Motogaito, ...
physica status solidi (a) 200 (1), 151-154, 2003
222003
GaN‐based Schottky barrier photodetectors from near ultraviolet to vacuum ultraviolet (360–50 nm)
K Hiramatsu, A Motogaito
physica status solidi (a) 195 (3), 496-501, 2003
162003
Extraordinary optical transmission exhibited by surface plasmon polaritons in a double-layer wire grid polarizer
A Motogaito, Y Morishita, H Miyake, K Hiramatsu
Plasmonics 10 (6), 1657-1662, 2015
152015
Crystalline and optical properties of ELO GaN by HVPE using tungsten mask
K HIRAMATSU, A MOTOGAITO, H MIYAKE, Y HONDA, Y IYECHIKA, ...
IEICE transactions on electronics 83 (4), 620-626, 2000
152000
Detecting high-refractive-index media using surface plasmon sensor with one-dimensional metal diffraction grating
A Motogaito, S Mito, H Miyake, K Hiramatsu
Optics and Photonics Journal 6 (7), 164-170, 2016
112016
Fabrication of GaN with buried tungsten (W) structures using epitaxial lateral overgrowth (ELO) via LP-MOVPE
H Miyake, M Yamaguchi, M Haino, A Motogaito, K Hiramatsu, S Nambu, ...
MRS Internet Journal of Nitride Semiconductor Research 5 (1), 62-68, 2000
112000
Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media
A Motogaito, S Nakamura, J Miyazaki, H Miyake, K Hiramatsu
Optics Communications 341, 64-68, 2015
102015
Fabrication of a binary diffractive lens for controlling the luminous intensity distribution of LED light
A Motogaito, N Machida, T Morikawa, K Manabe, H Miyake, K Hiramatsu
Optical review 16 (4), 455-457, 2009
92009
Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X‐ray (SX) region (10–100 nm)
A Motogaito, H Watanabe, K Hiramatsu, K Fukui, Y Hamamura, ...
physica status solidi (a) 200 (1), 147-150, 2003
82003
Fabrication of binary diffractive lens on optical films by electron beam lithography
A Motogaito, K Hiramatsu, G Kostovski
Advances in Unconventional Lithography, G. Kostovski, ed, 139-148, 2011
72011
Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure
A Motogaito, T Nakajima, H Miyake, K Hiramatsu
Applied Physics A 123 (12), 1-5, 2017
62017
GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPE
K Hiramatsu, M Haino, M Yamaguchi, H Miyake, A Motogaito, N Sawaki, ...
Materials Science and Engineering: B 82 (1-3), 62-64, 2001
62001
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