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Ludwig Schweitzer
Ludwig Schweitzer
Physikalisch-Technische Bundesanstalt
Verified email at apitex.de
Title
Cited by
Cited by
Year
Recombination processes in a-Si: H: Spin-dependent photoconductivity
H Dersch, L Schweitzer, J Stuke
Physical Review B 28 (8), 4678, 1983
3061983
Relation between the correlation dimensions of multifractal wave functions and spectral measures in integer quantum Hall systems
B Huckestein, L Schweitzer
Physical review letters 72 (5), 713, 1994
1601994
Magnetic field and electron states in two-dimensional disordered systems
L Schweitzer, B Kramer, A MacKinnon
Journal of Physics C: Solid State Physics 17 (23), 4111, 1984
1351984
Mean field approach to the electron glass
M Grunewald, B Pohlmann, L Schweitzer, D Wurtz
Journal of Physics C: Solid State Physics 15 (32), L1153, 1982
1341982
A model for the anomalous magnetoresistance in amorphous semiconductors
B Movaghar, L Schweitzer
Journal of Physics C: Solid State Physics 11 (1), 125, 1978
831978
Critical dynamics and multifractal exponents at the Anderson transition in 3d disordered systems
T Brandes, B Huckestein, L Schweitzer
Annalen der Physik 508 (8), 633-651, 1996
741996
Crossover from critical orthogonal to critical unitary statistics at the Anderson transition
M Batsch, L Schweitzer, IK Zharekeshev, B Kramer
Physical review letters 77 (8), 1552, 1996
701996
Electron spin resonance in amorphous germanium and silicon
B Movaghar, L Schweitzer, H Overhof
Philosophical Magazine B 37 (6), 683-702, 1978
681978
ESR and conductivity in amorphous germanium and silicon
B Movaghar, L Schweitzer
physica status solidi (b) 80 (2), 491-498, 1977
651977
Characterization of the electronic states near the centres of the Landau bands under quantum Hall conditions
B Huckestein, B Kramer, L Schweitzer
Surface science 263 (1-3), 125-128, 1992
641992
Multifractal wave functions and inelastic scattering in the integer quantum Hall effect
T Brandes, L Schweitzer, B Kramer
Physical review letters 72 (22), 3582, 1994
621994
Critical regime of two-dimensional Ando model: relation between critical conductance and fractal dimension of electronic eigenstates
P Markoš, L Schweitzer
Journal of Physics A: Mathematical and General 39 (13), 3221, 2006
532006
The conductivity of a two-dimensional electronic system of finite width in the presence of a strong perpendicular magnetic field and a random potential
L Schweitzer, B Kramer, A MacKinnon
Zeitschrift für Physik B Condensed Matter 59 (4), 379-384, 1985
451985
Dependence of critical level statistics on the sample shape
H Potempa, L Schweitzer
Journal of Physics: Condensed Matter 10 (25), L431, 1998
431998
Scaling of level statistics and critical exponent of disordered two-dimensional symplectic systems
L Schweitzer, IK Zharekeshev
Journal of Physics: Condensed Matter 9 (33), L441, 1997
401997
Universal conductance and conductivity at critical points in integer quantum hall systems
L Schweitzer, P Markoš
Physical review letters 95 (25), 256805, 2005
382005
The influence of the exchange interaction on the ESR linewidth in amorphous silicon
R Bachus, B Movaghar, L Schweitzer, U Voget-Grote
Philosophical Magazine B 39 (1), 27-37, 1979
371979
Magnetic Field Dependence of the Photoconductivity in Amorphous Silicon
H Mell, B Movaghar, L Schweitzer
physica status solidi (b) 88 (2), 531-535, 1978
361978
The von Klitzing resistance standard
H Bachmair, EO Göbel, G Hein, J Melcher, B Schumacher, J Schurr, ...
Physica E: Low-dimensional Systems and Nanostructures 20 (1-2), 14-23, 2003
322003
Extended fractons and localized phonons on percolation clusters
JW Kantelhardt, A Bunde, L Schweitzer
Physical review letters 81 (22), 4907, 1998
311998
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