Ludwig Schweitzer
Ludwig Schweitzer
Physikalisch-Technische Bundesanstalt
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Recombination processes in a-Si: H: Spin-dependent photoconductivity
H Dersch, L Schweitzer, J Stuke
Physical Review B 28 (8), 4678, 1983
Relation between the correlation dimensions of multifractal wave functions and spectral measures in integer quantum Hall systems
B Huckestein, L Schweitzer
Physical review letters 72 (5), 713, 1994
Magnetic field and electron states in two-dimensional disordered systems
L Schweitzer, B Kramer, A MacKinnon
Journal of Physics C: Solid State Physics 17 (23), 4111, 1984
Mean field approach to the electron glass
M Grunewald, B Pohlmann, L Schweitzer, D Wurtz
Journal of Physics C: Solid State Physics 15 (32), L1153, 1982
A model for the anomalous magnetoresistance in amorphous semiconductors
B Movaghar, L Schweitzer
Journal of Physics C: Solid State Physics 11 (1), 125, 1978
Electron spin resonance in amorphous germanium and silicon
B Movaghar, L Schweitzer, H Overhof
Philosophical Magazine B 37 (6), 683-702, 1978
Critical dynamics and multifractal exponents at the Anderson transition in 3d disordered systems
T Brandes, B Huckestein, L Schweitzer
Annalen der Physik 508 (8), 633-651, 1996
Crossover from critical orthogonal to critical unitary statistics at the Anderson transition
M Batsch, L Schweitzer, IK Zharekeshev, B Kramer
Physical review letters 77 (8), 1552, 1996
Characterization of the electronic states near the centres of the Landau bands under quantum Hall conditions
B Huckestein, B Kramer, L Schweitzer
Surface science 263 (1-3), 125-128, 1992
ESR and Conductivity in Amorphous Germanium and Silicon
B Movaghar, L Schweitzer
physica status solidi (b) 80 (2), 491-498, 1977
Multifractal wave functions and inelastic scattering in the integer quantum Hall effect
T Brandes, L Schweitzer, B Kramer
Physical review letters 72 (22), 3582, 1994
Critical regime of two-dimensional Ando model: relation between critical conductance and fractal dimension of electronic eigenstates
P Markoš, L Schweitzer
Journal of Physics A: Mathematical and General 39 (13), 3221, 2006
The conductivity of a two-dimensional electronic system of finite width in the presence of a strong perpendicular magnetic field and a random potential
L Schweitzer, B Kramer, A MacKinnon
Zeitschrift für Physik B Condensed Matter 59 (4), 379-384, 1985
The influence of the exchange interaction on the ESR linewidth in amorphous silicon
R Bachus, B Movaghar, L Schweitzer, U Voget-Grote
Philosophical Magazine B 39 (1), 27-37, 1979
Scaling of level statistics and critical exponent of disordered two-dimensional symplectic systems
L Schweitzer, IK Zharekeshev
Journal of Physics: Condensed Matter 9 (33), L441, 1997
Dependence of critical level statistics on the sample shape
H Potempa, L Schweitzer
Journal of Physics: Condensed Matter 10 (25), L431, 1998
Magnetic Field Dependence of the Photoconductivity in Amorphous Silicon
H Mell, B Movaghar, L Schweitzer
physica status solidi (b) 88 (2), 531-535, 1978
Universal conductance and conductivity at critical points in integer quantum hall systems
L Schweitzer, P Markoš
Physical review letters 95 (25), 256805, 2005
The von Klitzing resistance standard
H Bachmair, EO Göbel, G Hein, J Melcher, B Schumacher, J Schurr, ...
Physica E: Low-dimensional Systems and Nanostructures 20 (1-2), 14-23, 2003
Theory of the resonant and non-resonant photoconductivity changes in amorphous silicon
B Movaghar, B Ries, L Schweitzer
Philosophical Magazine B 41 (2), 159-167, 1980
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