K. E. J. Goh

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Fabio BussolottiIMRE, A-STAR, SingaporeVerified email at imre.a-star.edu.sg
Alex HamiltonProfessor of Physics, UNSWVerified email at unsw.edu.au
Frank RuessGoogleVerified email at google.com
Cedric TroadecInstitute of Materials Research and Engineering, SingaporeVerified email at imre.a-star.edu.sg
Aaron Chit Siong LauSenior Scientist II @ Institute of Materials Research and EngineeringVerified email at imre.a-star.edu.sg
Andrew T S WeeDepartment of Physics, National University of SingaporeVerified email at nus.edu.sg
Zi En OoiInstitute of Materials Research and Engineering (IMRE)Verified email at imre.a-star.edu.sg
Toby HallamLecturerVerified email at newcastle.ac.uk
Calvin Pei Yu WongInstitute of Materials Research and EngineeringVerified email at imre.a-star.edu.sg
Neil CursonProfessor of Nanoelectronics, London Centre for Nanotechnology, UCLVerified email at ucl.ac.uk
Michel BosmanNational University of SingaporeVerified email at nus.edu.sg
KL PEYProfessor, Singapore University of Technology and DesignVerified email at sutd.edu.sg
CHI DongzhiPrincipal Scientist, Institute of Materials Research and EngineeringVerified email at imre.a-star.edu.sg
Bent WeberNanyang Technological UniversityVerified email at ntu.edu.sg
P.K. Johnny Wong (黄炳钧)Professor, School of Microelectronics, Northwestern Polytechnical UniversityVerified email at nwpu.edu.cn
Yu Li HuangJoint school of NUS-TJU, IMRE, A*STAR and Physics, NUSVerified email at tjufz.org.cn
Shijie WangInstitute of Materials Research and EngineeringVerified email at imre.a-star.edu.sg
Shi Wun TongInstitute of Materials Research and EngineeringVerified email at imre.a-star.edu.sg
Steven R. SchofieldUniversity College LondonVerified email at ucl.ac.uk
Xinmao YinShanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai UniversityVerified email at shu.edu.cn

K. E. J. Goh

IMRE

Verified email at imre.a-star.edu.sg - Homepage

Physics nanotechnology low-dimensional transport quantum effects


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Electrically conductive filament for 3D-printed circuits and sensors SW Kwok, KHH Goh, ZD Tan, STM Tan, WW Tjiu, JY Soh, ZJG Ng, ... Applied Materials Today 9, 167-175, 2017	311	2017
Toward atomic-scale device fabrication in silicon using scanning probe microscopy FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ... Nano Letters 4 (10), 1969-1973, 2004	215	2004
Evidence of spin frustration in a vanadium diselenide monolayer magnet PKJ Wong, W Zhang, F Bussolotti, X Yin, TS Herng, L Zhang, YL Huang, ... Advanced materials 31 (23), 1901185, 2019	146	2019
Realization of atomically controlled dopant devices in silicon FJ Rueß, W Pok, TCG Reusch, MJ Butcher, KEJ Goh, L Oberbeck, ... Small 3 (4), 563-567, 2007	141	2007
Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2 L Cheng, X Wang, W Yang, J Chai, M Yang, M Chen, Y Wu, X Chen, ... Nature Physics 15, 347-351, 2019	133	2019
Can Reconstructed Se‐Deficient Line Defects in Monolayer VSe₂ Induce Magnetism? R Chua, J Yang, X He, X Yu, W Yu, F Bussolotti, PKJ Wong, KP Loh, ... Advanced Materials 32 (24), 2000693, 2020	96	2020
Influence of doping density on electronic transport in degenerate Si: P δ-doped layers KEJ Goh, L Oberbeck, MY Simmons, AR Hamilton, MJ Butcher Physical Review B 73 (3), 035401, 2006	85	2006
Modification of Vapor Phase Concentrations in MoS₂ Growth Using a NiO Foam Barrier YF Lim, K Priyadarshi, F Bussolotti, PK Gogoi, X Cui, M Yang, J Pan, ... ACS nano 12 (2), 1339-1349, 2018	82	2018
Roadmap on finding chiral valleys: screening 2D materials for valleytronics F Bussolotti, H Kawai, ZE Ooi, V Chellappan, D Thian, ALC Pang, ... Nano Futures 2 (3), 032001, 2018	77	2018
Interlayer interactions in 2D WS 2/MoS 2 heterostructures monolithically grown by in situ physical vapor deposition W Yang, H Kawai, M Bosman, B Tang, J Chai, W Le Tay, J Yang, HL Seng, ... Nanoscale 10 (48), 22927-22936, 2018	76	2018
Effect of encapsulation temperature on Si: P δ-doped layers KEJ Goh, L Oberbeck, MY Simmons, AR Hamilton, RG Clark Applied physics letters 85 (21), 4953-4955, 2004	66	2004
Scanning probe microscopy for silicon device fabrication MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ... Molecular Simulation 31 (6-7), 505-515, 2005	61	2005
Metallic 1T Phase, 3d¹ Electronic Configuration and Charge Density Wave Order in Molecular Beam Epitaxy Grown Monolayer Vanadium Ditelluride PKJ Wong, W Zhang, J Zhou, F Bussolotti, X Yin, L Zhang, AT N’Diaye, ... ACS nano 13 (11), 12894-12900, 2019	59*	2019
Electrical Doping Effect of Vacancies on Monolayer MoS₂ J Yang, H Kawai, CPY Wong, KEJ Goh The Journal of Physical Chemistry C 123 (5), 2933-2939, 2019	55	2019
Electron-electron interactions in highly disordered two-dimensional systems KEJ Goh, MY Simmons, AR Hamilton Physical Review B 77 (23), 235410, 2008	55	2008
One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy FJ Ruess, B Weber, KEJ Goh, O Klochan, AR Hamilton, MY Simmons Physical Review B 76 (8), 085403, 2007	55	2007
Electronic properties of atomically abrupt tunnel junctions in silicon FJ Ruess, W Pok, KEJ Goh, AR Hamilton, MY Simmons Physical Review B 75 (12), 121303, 2007	49	2007
Single layer MoS2 nanoribbon field effect transistor D Kotekar-Patil, J Deng, SL Wong, CS Lau, KEJ Goh Applied Physics Letters 114 (1), 2019	46	2019
Electrically-excited surface plasmon polaritons with directionality control Z Dong, HS Chu, D Zhu, W Du, YA Akimov, WP Goh, T Wang, KEJ Goh, ... ACS photonics 2 (3), 385-391, 2015	43	2015
Bilayer gate dielectric study by scanning tunneling microscopy YC Ong, DS Ang, KL Pey, SJ O’Shea, KEJ Goh, C Troadec, CH Tung, ... Applied Physics Letters 91 (10), 2007	41	2007

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