Abdul Rahman Mohmad
Abdul Rahman Mohmad
Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia
Verified email at ukm.edu.my - Homepage
Cited by
Cited by
Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ...
physica status solidi (b) 251 (6), 1276-1281, 2014
Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution
J Yang, AR Mohmad, Y Wang, R Fullon, X Song, F Zhao, I Bozkurt, ...
Nature materials 18 (12), 1309-1314, 2019
The effect of Bi composition to the optical quality of GaAs1−xBix
AR Mohmad, F Bastiman, CJ Hunter, JS Ng, SJ Sweeney, JPR David
Applied Physics Letters 99 (4), 042107, 2011
Effects of rapid thermal annealing on GaAs1-xBix alloys
AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ...
Applied Physics Letters 101 (1), 012106, 2012
Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth
F Bastiman, ARB Mohmad, JS Ng, JPR David, SJ Sweeney
Journal of crystal growth 338 (1), 57-61, 2012
Absorption Characteristics ofDiodes in the Near-Infrared
CJ Hunter, F Bastiman, AR Mohmad, R Richards, JS Ng, SJ Sweeney, ...
IEEE Photonics Technology Letters 24 (23), 2191-2194, 2012
Molecular beam epitaxy growth of GaAsBi using As2 and As4
RD Richards, F Bastiman, CJ Hunter, DF Mendes, AR Mohmad, ...
Journal of crystal growth 390, 120-124, 2014
Photoluminescence investigation of high quality on GaAs
AR Mohmad, F Bastiman, JS Ng, SJ Sweeney, JPR David
Applied Physics Letters 98 (12), 122107, 2011
Enhancement of ZnO-rGO nanocomposite thin films by gamma radiation for E. coli sensor
NAN Azmy, AAA Bakar, N Arsad, S Idris, AR Mohmad, AA Hamid
Applied Surface Science 392, 1134-1143, 2017
Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures
AR Mohmad, F Bastiman, CJ Hunter, F Harun, DF Reyes, DL Sales, ...
Semiconductor Science and Technology 30 (9), 094018, 2015
Telecommunication wavelength GaAsBi light emitting diodes
RD Richards, CJ Hunter, F Bastiman, AR Mohmad, JPR David
IET Optoelectronics 10 (2), 34-38, 2016
Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich InxAl1− xN thin films grown by plasma-assisted dual source reactive evaporation
M Alizadeh, V Ganesh, BT Goh, CF Dee, AR Mohmad, SA Rahman
Applied Surface Science 378, 150-156, 2016
Room temperature photoluminescence intensity enhancement in GaAs1‐xBix alloys
AR Mohmad, F Bastiman, JS Ng, SJ Sweeney, JPR David
physica status solidi c 9 (2), 259-261, 2012
Effects of Mo vapor concentration on the morphology of vertically standing MoS2 nanoflakes
MH Johari, MS Sirat, MA Mohamed, SNFM Nasir, MAM Teridi, ...
Nanotechnology 31 (30), 305710, 2020
GaAsBi MQWs for multi-junction photovoltaics
R Richards, F Bastiman, CJ Hunter, AR Mohmad, JPR David, ...
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 0303-0305, 2013
Growth and characterisation of GaAsBi
ARB Mohmad
University of Sheffield, 2013
Quantum Confinement Effect and Photoenhancement of Photoluminescence of PbS and PbS/MnS Quantum Dots
MS Zaini, J Ying Chyi Liew, SA Alang Ahmad, AR Mohmad, ...
Applied Sciences 10 (18), 6282, 2020
Temperature and power dependence of photoluminescence in PbS quantum dots nanoparticles
MS Zaini, MA Kamarudin, JLY Chyi, SAA Ahmad, AR Mohmad
Sains Malays 48, 1281-1288, 2019
Resonance of bandgap and spin-orbit splitting in GaBiAs/GaAs alloys
Z Batool, K Hild, SJ Sweeney, TJC Hosea, AR Mohmad, T Tiedje, X Lu, ...
2nd International Workshop on Bismuth Containing Semiconductors, 2011
Bandgap Engineering of GaAsBi Alloy for Emission of up to 1.52 Ám
AR Mohmad, JPK David
2018 IEEE International Conference on Semiconductor Electronics (ICSE), 177-179, 2018
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