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Daniel Kai Simon
Daniel Kai Simon
Prozess-Entwicklungsingenieur
Bestätigte E-Mail-Adresse bei infineon.com
Titel
Zitiert von
Zitiert von
Jahr
On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes
DK Simon, PM Jordan, T Mikolajick, I Dirnstorfer
ACS applied materials & interfaces 7 (51), 28215-28222, 2015
1262015
Symmetrical Al 2 O 3-based passivation layers for p-and n-type silicon
DK Simon, PM Jordan, I Dirnstorfer, F Benner, C Richter, T Mikolajick
Solar Energy Materials and Solar Cells 131, 72-76, 2014
492014
On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films
M Tsigkourakos, T Hantschel, DK Simon, T Nuytten, AS Verhulst, ...
Carbon 79, 103-112, 2014
312014
Atomic layer deposited high-κ nanolaminates for silicon surface passivation
F Benner, PM Jordan, C Richter, DK Simon, I Dirnstorfer, M Knaut, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
282014
Trapped charge densities in Al2O3-based silicon surface passivation layers
PM Jordan, DK Simon, T Mikolajick, I Dirnstorfer
Journal of Applied Physics 119 (21), 215306, 2016
192016
Near surface inversion layer recombination in Al2O3 passivated n-type silicon
I Dirnstorfer, DK Simon, PM Jordan, T Mikolajick
Journal of Applied Physics 116 (4), 044112, 2014
192014
Al 2 O 3-TiO 2 Nanolaminates for Conductive Silicon Surface Passivation
I Dirnstorfer, T Chohan, PM Jordan, M Knaut, DK Simon, JW Bartha, ...
IEEE Journal of Photovoltaics 6 (1), 86-91, 2016
182016
ALD Al2O3 based nanolaminates for solar cell applications
DK Simon, PM Jordan, M Knaut, T Chohan, T Mikolajick, I Dirnstorfer
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 1-6, 2015
112015
Deep level defects in ZnO
J Bollmann, DK Simon
Physica B: Condensed Matter 439, 14-19, 2014
102014
BiasMDP: Carrier lifetime characterization technique with applied bias voltage
PM Jordan, DK Simon, T Mikolajick, I Dirnstorfer
Applied Physics Letters 106 (6), 061602, 2015
92015
Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering
DK Simon, D Tröger, T Schenk, I Dirnstorfer, FPG Fengler, PM Jordan, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (2 …, 2016
72016
Low‐thermal budget flash light annealing for Al2O3 surface passivation
DK Simon, T Henke, PM Jordan, FPG Fengler, T Mikolajick, JW Bartha, ...
physica status solidi (RRL)-Rapid Research Letters 9 (11), 631-635, 2015
52015
2D mapping of chemical and field effect passivation of Al2O3 on silicon substrates
PM Jordan, DK Simon, FPG Fengler, T Mikolajick, I Dirnstorfer
Energy Procedia 77, 91-98, 2015
52015
Feasibility study for silicon heterojunction metal wrap through solar cells
I Dirnstorfer, F Benner, DK Simon, T Mikolajick, N Schilling, U Klotzbach
Proc. 28th PVSEC 1108, 2013
52013
Initial growth stages of heavily boron‐doped HFCVD diamond for electrical probe application
DK Simon, M Tsigkourakos, T Hantschel, T Conard, W Vandervorst
physica status solidi (a) 210 (10), 2002-2007, 2013
42013
Development of Silicon Heterojunction Metal Wrap Through Solar Cells
I Dirnstorfer, N Schilling, S Koerner, P Gierth, D Sontag, PM Jordan, ...
Proc. 29th PVSEC, 1044-1048, 2014
12014
Via Hole Conditioning in Silicon Heterojunction metal Wrap through Solar Cells
I Dirnstorfer, N Schilling, S Koerner, P Gierth, A Waltinger, B Leszczynska, ...
Energy Procedia 77, 458-463, 2015
2015
Silicon heterojunction metal wrap through solar cells–a 3D TCAD simulation study
I Dirnstorfer, DK Simon, B Leszczynska, T Mikolajick
EPJ Web of Conferences 79, 01004, 2014
2014
HFCVD boron-doped diamond layers: influence of the initial growth stages and wire carburization
D Simon, M Tsigkourakos, T Hantschel, T Conard, W Vandervorst
2013
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