Kazumasa Hiramatsu
Kazumasa Hiramatsu
Mie University, Emeritus Professore
Bestätigte E-Mail-Adresse bei elec.mie-u.ac.jp
Titel
Zitiert von
Zitiert von
Jahr
P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)
H Amano, M Kito, K Hiramatsu, I Akasaki
Japanese journal of applied physics 28 (12A), L2112, 1989
27391989
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPE
I Akasaki, H Amano, Y Koide, K Hiramatsu, N Sawaki
Journal of crystal growth 98 (1-2), 209-219, 1989
10881989
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
K Hiramatsu, K Nishiyama, M Onishi, H Mizutani, M Narukawa, ...
Journal of Crystal Growth 221 (1-4), 316-326, 2000
5082000
Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN pn junction LED
I Akasaki, H Amano, M Kito, K Hiramatsu
Journal of luminescence 48, 666-670, 1991
4561991
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
K Hiramatsu, S Itoh, H Amano, I Akasaki, N Kuwano, T Shiraishi, K Oki
Journal of Crystal Growth 115 (1-4), 628-633, 1991
4421991
Selective growth of wurtzite GaN and AlxGa1− xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
Y Kato, S Kitamura, K Hiramatsu, N Sawaki
Journal of crystal growth 144 (3-4), 133-140, 1994
4381994
Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
H Amano, I Akasaki, K Hiramatsu, N Koide, N Sawaki
Thin Solid Films 163, 415-420, 1988
3781988
Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy
P Hacke, T Detchprohm, K Hiramatsu, N Sawaki
Applied physics letters 63 (19), 2676-2678, 1993
3701993
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
A Watanabe, T Takeuchi, K Hirosawa, H Amano, K Hiramatsu, I Akasaki
Journal of crystal growth 128 (1-4), 391-396, 1993
3581993
Relaxation process of the thermal strain in the GaN/α-Al2O3 heterostructure and determination of the intrinsic lattice constants of GaN free from the strain
T Detchprohm, K Hiramatsu, K Itoh, I Akasaki
Japanese journal of applied physics 31 (10B), L1454, 1992
3491992
Recent progress in selective area growth and epitaxial lateral overgrowth of III‐nitrides: effects of reactor pressure in MOVPE growth
K Hiramatsu, K Nishiyama, A Motogaito, H Miyake, Y Iyechika, T Maeda
physica status solidi (a) 176 (1), 535-543, 1999
3461999
Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
T Detchprohm, K Hiramatsu, H Amano, I Akasaki
Applied physics letters 61 (22), 2688-2690, 1992
3331992
Analysis of deep levels in n‐type GaN by transient capacitance methods
P Hacke, T Detchprohm, K Hiramatsu, N Sawaki, K Tadatomo, K Miyake
Journal of applied physics 76 (1), 304-309, 1994
3211994
Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
H Amano, M Kitoh, K Hiramatsu, I Akasaki
Journal of the Electrochemical Society 137 (5), 1639, 1990
2821990
Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy
K Hiramatsu, T Detchprohm, I Akasaki
Japanese journal of applied physics 32 (4R), 1528, 1993
2801993
Process of vapor growth of gallium nitride and its apparatus
K Manabe, N Okazaki, I Akazaki, K Hiramatsu, H Amano
US Patent 4,911,102, 1990
2561990
Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
T Takeuchi, H Amano, K Hiramatsu, N Sawaki, I Akasaki
Journal of crystal growth 115 (1-4), 634-638, 1991
2471991
Growth of single crystal GaN substrate using hydride vapor phase epitaxy
K Naniwae, S Itoh, H Amano, K Itoh, K Hiramatsu, I Akasaki
Journal of crystal growth 99 (1-4), 381-384, 1990
2451990
Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 20) and (0001) Sapphire Substrates
H Amano, K Hiramatsu, I Akasaki
Japanese journal of applied physics 27 (8A), L1384, 1988
2331988
Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy
S Kitamura, K Hiramatsu, N Sawaki
Japanese journal of applied physics 34 (9B), L1184, 1995
2291995
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