| Optimizations of defect filter layers for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates M Tang, S Chen, J Wu, Q Jiang, K Kennedy, P Jurczak, M Liao, ... IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 50-56, 2016 | 87 | 2016 |
| room temperature InGaAs/AlAsSb/InP quantum cascade lasers SY Zhang, DG Revin, JW Cockburn, K Kennedy, AB Krysa, M Hopkinson Applied Physics Letters 94 (3), 031106, 2009 | 78 | 2009 |
| Quantum dot superluminescent diodes for optical coherence tomography: device engineering PDL Greenwood, DTD Childs, K Kennedy, KM Groom, M Hugues, ... IEEE Journal of Selected Topics in Quantum Electronics 16 (4), 1015-1022, 2010 | 53 | 2010 |
| High peak power and InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K JP Commin, DG Revin, SY Zhang, AB Krysa, K Kennedy, JW Cockburn Applied Physics Letters 97 (3), 031108, 2010 | 49 | 2010 |
| Monolithically integrated electrically pumped continuous-wave III-V quantum dot light sources on silicon M Liao, S Chen, S Huo, S Chen, J Wu, M Tang, K Kennedy, W Li, S Kumar, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-10, 2017 | 38 | 2017 |
| Quantum dot superluminescent diodes for optical coherence tomography: skin imaging N Krstajić, LE Smith, SJ Matcher, DTD Childs, M Bonesi, PDL Greenwood, ... IEEE Journal of Selected Topics in Quantum Electronics 16 (4), 748-754, 2010 | 38 | 2010 |
| GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures S Chen, W Li, Z Zhang, D Childs, K Zhou, J Orchard, K Kennedy, ... Nanoscale Research Letters 10 (1), 1-8, 2015 | 34 | 2015 |
| Quantum dot selective area intermixing for broadband light sources KJ Zhou, Q Jiang, ZY Zhang, SM Chen, HY Liu, ZH Lu, K Kennedy, ... Optics Express 20 (24), 26950-26957, 2012 | 32 | 2012 |
| Semiconductor nanostructure quantum ratchet for high efficiency solar cells A Vaquero-Stainer, M Yoshida, NP Hylton, A Pusch, O Curtin, M Frogley, ... Communications Physics 1 (1), 1-7, 2018 | 30 | 2018 |
| Gallium nitride superluminescent light emitting diodes for optical coherence tomography applications GR Goldberg, A Boldin, SML Andersson, P Ivanov, N Ozaki, RJE Taylor, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-11, 2017 | 28 | 2017 |
| Controlling radiative loss in quantum well solar cells NJ Ekins-Daukes, KH Lee, L Hirst, A Chan, M Führer, J Adams, B Browne, ... Journal of Physics D: Applied Physics 46 (26), 264007, 2013 | 26 | 2013 |
| Optical and thermal characteristics of narrow-ridge quantum-cascade lasers M Wienold, MP Semtsiv, I Bayrakli, WT Masselink, M Ziegler, K Kennedy, ... Journal of Applied Physics 103 (8), 083113, 2008 | 25 | 2008 |
| Gallium nitride light sources for optical coherence tomography GR Goldberg, P Ivanov, N Ozaki, DTD Childs, KM Groom, KL Kennedy, ... Gallium Nitride Materials and Devices XII 10104, 210-216, 2017 | 23 | 2017 |
| Room-temperature GaAs/AlGaAs quantum cascade lasers grown by metal–organic vapor phase epitaxy AB Krysa, DG Revin, JP Commin, CN Atkins, K Kennedy, Y Qiu, T Walther, ... IEEE Photonics Technology Letters 23 (12), 774-776, 2011 | 22 | 2011 |
| Toward 1550-nm GaAs-based lasers using InAs/GaAs quantum dot bilayers MA Majid, DTD Childs, H Shahid, S Chen, K Kennedy, RJ Airey, RA Hogg, ... IEEE Journal of Selected Topics in Quantum Electronics 17 (5), 1334-1342, 2011 | 22 | 2011 |
| InP-based midinfrared quantum cascade lasers for wavelengths below 4 μm DG Revin, JP Commin, SY Zhang, AB Krysa, K Kennedy, JW Cockburn IEEE Journal of Selected Topics in Quantum Electronics 17 (5), 1417-1425, 2011 | 21 | 2011 |
| High performance InP-based quantum cascade distributed feedback lasers with deeply etched lateral gratings K Kennedy, AB Krysa, JS Roberts, KM Groom, RA Hogg, DG Revin, ... Applied physics letters 89 (20), 201117, 2006 | 21 | 2006 |
| Design, growth, fabrication, and characterization of quantum dot broadband superluminescent light emitting diode SK Ray, KM Groom, R Alexander, K Kennedy, HY Liu, M Hopkinson, ... Journal of applied physics 100 (10), 103105, 2006 | 20 | 2006 |
| Temperature dependence of the band gap of zinc nitride observed in photoluminescence measurements A Trapalis, I Farrer, K Kennedy, A Kean, J Sharman, J Heffernan Applied Physics Letters 111 (12), 122105, 2017 | 17 | 2017 |
| O-band excited state quantum dot bilayer lasers MA Majid, DTD Childs, K Kennedy, R Airey, RA Hogg, E Clarke, ... Applied Physics Letters 99 (5), 051101, 2011 | 14 | 2011 |
