| Effect of copper TSV annealing on via protrusion for TSV wafer fabrication A Heryanto, WN Putra, A Trigg, S Gao, WS Kwon, FX Che, XF Ang, J Wei, ... Journal of electronic materials 41, 2533-2542, 2012 | 173 | 2012 |
| Study of low-temperature thermocompression bonding in Ag-In solder for packaging applications RI Made, CL Gan, LL Yan, A Yu, SW Yoon, JH Lau, C Lee Journal of electronic materials 38, 365-371, 2009 | 60 | 2009 |
| Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films CY Khoo, H Liu, WA Sasangka, RI Made, N Tamura, M Kunz, AS Budiman, ... Journal of materials science 51, 1864-1872, 2016 | 46 | 2016 |
| Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation GJ Syaranamual, WA Sasangka, RI Made, S Arulkumaran, GI Ng, SC Foo, ... Microelectronics Reliability 64, 589-593, 2016 | 34 | 2016 |
| Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits RI Made, CL Gan, L Yan, KHB Kor, HL Chia, KL Pey, CV Thompson Acta materialia 60 (2), 578-587, 2012 | 32 | 2012 |
| MOCVD growth of GaN on SEMI-spec 200 mm Si L Zhang, KH Lee, IM Riko, CC Huang, A Kadir, KE Lee, SJ Chua, ... Semiconductor Science and Technology 32 (6), 065001, 2017 | 30 | 2017 |
| Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers D Kohen, XS Nguyen, RI Made, C Heidelberger, KH Lee, KEK Lee, ... Journal of Crystal Growth 478, 64-70, 2017 | 22 | 2017 |
| Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing WA Sasangka, GJ Syaranamual, RI Made, CV Thompson, CL Gan AIP Advances 6 (9), 2016 | 20 | 2016 |
| Experimental characterization and modeling of the contact resistance of Cu–Cu bonded interconnects HL Leong, CL Gan, RI Made, CV Thompson, KL Pey, HY Li Journal of Applied Physics 105 (3), 2009 | 18 | 2009 |
| Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation WA Sasangka, GJ Syaranamual, Y Gao, RI Made, CL Gan, CV Thompson Microelectronics Reliability 76, 287-291, 2017 | 17 | 2017 |
| Heteroepitaxial growth of In0. 30Ga0. 70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer D Kohen, XS Nguyen, S Yadav, A Kumar, RI Made, C Heidelberger, ... AIP Advances 6 (8), 2016 | 17 | 2016 |
| Characterisation of defects generated during constant current InGaN-on-silicon LED operation RI Made, Y Gao, GJ Syaranamual, WA Sasangka, L Zhang, XS Nguyen, ... Microelectronics Reliability 76, 561-565, 2017 | 16 | 2017 |
| Noble metal alloy thin films by atomic layer deposition and rapid Joule heating Y Guo, Y Zou, C Cheng, L Wang, RI Made, R Goei, KW Tan, S Li, AIY Tok Scientific Reports 12 (1), 2522, 2022 | 15 | 2022 |
| Pb-Free glass paste: a metallization-free die-attachment solution for high-temperature application on ceramic substrates A Sharif, JZ Lim, RI Made, FL Lau, EJR Phua, JD Lim, CC Wong, CL Gan, ... Journal of electronic materials 42, 2667-2676, 2013 | 14 | 2013 |
| Electrical behavior of Au–Ge eutectic solder under aging for solder bump application in high temperature Electronics FL Lau, RI Made, WN Putra, JZ Lim, VC Nachiappan, JL Aw, CL Gan Microelectronics Reliability 53 (9-11), 1581-1586, 2013 | 11 | 2013 |
| Effect of direct current stressing to Cu–Cu bond interface imperfection for three dimensional integrated circuits RI Made, P Lan, HY Li, CL Gan, CS Tan Microelectronic engineering 106, 149-154, 2013 | 11 | 2013 |
| An object-oriented framework to enable workflow evolution across materials acceleration platforms CJ Leong, KYA Low, J Recatala-Gomez, PQ Velasco, E Vissol-Gaudin, ... Matter 5 (10), 3124-3134, 2022 | 10 | 2022 |
| Germanium-on-insulator virtual substrate for InGaP epitaxy S Bao, KH Lee, C Wang, B Wang, RI Made, SF Yoon, J Michel, ... Materials Science in Semiconductor Processing 70, 17-23, 2017 | 8 | 2017 |
| Direct bandgap photoluminescence from n-type indirect GaInP alloys C Wang, B Wang, RI Made, SF Yoon, J Michel Photonics Research 5 (3), 239-244, 2017 | 8 | 2017 |
| MOCVD growth of high quality InGaAs HEMT layers on large scale Si wafers for heterogeneous integration with Si CMOS XS Nguyen, S Yadav, KH Lee, D Kohen, A Kumar, RI Made, KEK Lee, ... IEEE Transactions on Semiconductor Manufacturing 30 (4), 456-461, 2017 | 7 | 2017 |
E A FitzgeraldCornell, ATT, MIT, Massachusetts Institute of Technology, NTUยืนยันอีเมลแล้วที่ mit.edu
