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Markus Pristovsek
Markus Pristovsek
Verified email at imass.nagoya-u.ac.jp - Homepage
Title
Cited by
Cited by
Year
The critical thickness of InGaN on (0 0 0 1) GaN
M Leyer, J Stellmach, C Meissner, M Pristovsek, M Kneissl
Journal of Crystal Growth 310 (23), 4913-4915, 2008
1252008
Atomic structure of InP (001)-(2× 4): A dimer reconstruction
WG Schmidt, F Bechstedt, N Esser, M Pristovsek, C Schultz, W Richter
Physical Review B 57 (23), 14596, 1998
1081998
(2× 4) GaP (001) surface: Atomic structure and optical anisotropy
AM Frisch, WG Schmidt, J Bernholc, M Pristovsek, N Esser, W Richter
Physical Review B 60 (4), 2488, 1999
811999
Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
JT Zettler, K Haberland, M Zorn, M Pristovsek, W Richter, P Kurpas, ...
Journal of crystal growth 195 (1-4), 151-162, 1998
751998
Orientation control of (11-22) and (10-1-3) GaN grown on (10-10) sapphire by metal-organic vapor phase epitaxy
S Ploch, M Frentrup, T Wernicke, M Pristovsek, M Weyers, M Kneissl
Journal of Crystal Growth 312 (15), 2171-2174, 2010
622010
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
Y Robin, SY Bae, TV Shubina, M Pristovsek, EA Evropeitsev, DA Kirilenko, ...
Scientific reports 8 (1), 7311, 2018
592018
Crystal orientation of GaN layers on (1010) m‐plane sapphire
M Frentrup, S Ploch, M Pristovsek, M Kneissl
physica status solidi (b) 248 (3), 583-587, 2011
582011
GaP (001) and InP (001): Reflectance anisotropy and surface geometry
N Esser, WG Schmidt, J Bernholc, AM Frisch, P Vogt, M Zorn, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
581999
Surface diffusion and layer morphology of (11-22) GaN grown by metal-organic vapor phase epitaxy
S Ploch, T Wernicke, DV Dinh, M Pristovsek, M Kneissl
Journal of Applied Physics 111 (3), 033526-033526-5, 2012
572012
Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
X Yang, S Nitta, K Nagamatsu, SY Bae, HJ Lee, Y Liu, M Pristovsek, ...
Journal of Crystal Growth 482, 1-8, 2018
552018
Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures
TJ Badcock, M Ali, T Zhu, M Pristovsek, RA Oliver, AJ Shields
Applied Physics Letters 109 (15), 2016
512016
Spectroscopic process sensors in MOVPE device production
K Haberland, P Kurpas, M Pristovsek, JT Zettler, M Weyers, W Richter
Applied Physics-Section A-Materials Science and Processing 68 (3), 309-314, 1999
511999
Surface processes before and during growth of GaAs (001)
K Ploska, JT Zettler, W Richter, J Jönsson, F Reinhardt, J Rumberg, ...
Journal of crystal growth 145 (1-4), 44-52, 1994
511994
MOVPE growth of semipolar (112¯ 2) AlN on m-plane (101¯ 0) sapphire
J Stellmach, M Frentrup, F Mehnke, M Pristovsek, T Wernicke, M Kneissl
Journal of crystal growth 355 (1), 59-62, 2012
502012
Scanning-tunneling-microscopy study of InP (001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples
N Esser, U Resch-Esser, M Pristovsek, W Richter
Physical Review B 53 (20), R13257, 1996
451996
Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)
JT Zettler, J Rumberg, K Ploska, K Stahrenberg, M Pristovsek, W Richter, ...
physica status solidi (a) 152 (1), 35-47, 1995
451995
Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs (001)
JT Zettler, T Wethkamp, M Zorn, M Pristovsek, C Meyne, K Ploska, ...
Applied physics letters 67 (25), 3783-3785, 1995
441995
Structural and optical properties of semipolar (112 2) AlGaN grown on (101 0) sapphire by metal–organic vapor phase epitaxy
J Stellmach, F Mehnke, M Frentrup, C Reich, J Schlegel, M Pristovsek, ...
Journal of crystal growth 367, 42-47, 2013
432013
Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1− xAs growth in MOVPE
K Haberland, A Kaluza, M Zorn, M Pristovsek, H Hardtdegen, M Weyers, ...
Journal of crystal growth 240 (1-2), 87-97, 2002
422002
Polarity determination of polar and semipolar (112¯ 2) InN and GaN layers by valence band photoemission spectroscopy
D Skuridina, DV Dinh, B Lacroix, P Ruterana, M Hoffmann, Z Sitar, ...
Journal of Applied Physics 114 (17), 2013
412013
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