| Nanosecond threshold switching of GeTe6 cells and their potential as selector devices M Anbarasu, M Wimmer, G Bruns, M Salinga, M Wuttig Applied Physics Letters 100 (14), 2012 | 145 | 2012 |
| Structural study on amorphous and crystalline state of phase change material M Upadhyay, S Murugavel, M Anbarasu, TR Ravindran Journal of Applied Physics 110 (8), 2011 | 67 | 2011 |
| Microstructure, mechanical properties and shape memory behaviour of friction stir welded nitinol SSM Prabu, HC Madhu, CS Perugu, K Akash, PA Kumar, SV Kailas, ... Materials Science and Engineering: A 693, 233-236, 2017 | 52 | 2017 |
| Redefining the speed limit of phase change memory revealed by time-resolved steep threshold-switching dynamics of AgInSbTe devices KD Shukla, N Saxena, S Durai, A Manivannan Scientific Reports 6 (1), 37868, 2016 | 40 | 2016 |
| Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices N Saxena, C Persch, M Wuttig, A Manivannan Scientific reports 9 (1), 19251, 2019 | 39 | 2019 |
| Shape memory effect, temperature distribution and mechanical properties of friction stir welded nitinol SSM Prabu, HC Madhu, CS Perugu, K Akash, R Mithun, PA Kumar, ... Journal of Alloys and Compounds 776, 334-345, 2019 | 34 | 2019 |
| Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy A Manivannan, SK Myana, K Miriyala, S Sahu, R Ramadurai Applied Physics Letters 105 (24), 2014 | 30 | 2014 |
| Influence of fluence, beam overlap and aging on the wettability of pulsed Nd3+: YAG nanosecond laser-textured Cu and Al sheets YEB Vidhya, A Pattamatta, A Manivannan, NJ Vasa Applied Surface Science 548, 149259, 2021 | 28 | 2021 |
| The influence of network rigidity on the electrical switching behaviour of Ge–Te–Si glasses suitable for phase change memory applications M Anbarasu, S Asokan Journal of Physics D: Applied Physics 40 (23), 7515, 2007 | 28 | 2007 |
| Electrical switching behavior of bulk As–Te–Si glasses: composition dependence and topological effects M Anbarasu, S Asokan Applied Physics A 80, 249-252, 2005 | 22 | 2005 |
| Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge–Te–Si glass M Anbarasu, S Asokan, S Prusty, AK Sood Applied Physics Letters 91 (9), 2007 | 21 | 2007 |
| Local structure of amorphous Ag5In5Sb60Te30 and In3SbTe2 phase change materials revealed by X-ray photoelectron and Raman spectroscopic studies S Sahu, A Manivannan, H Shaik, G Mohan Rao Journal of Applied Physics 122 (1), 2017 | 20 | 2017 |
| Impact of thermal boundary resistance on the performance and scaling of phase-change memory device S Durai, S Raj, A Manivannan IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2019 | 19 | 2019 |
| Understanding the structure and properties of phase change materials for data storage applications M Anbarasu, M Wuttig Journal of the Indian Institute of Science 91 (2), 259-274, 2011 | 18 | 2011 |
| Laser assisted wet texturing of flexible polyethylene terephthalate substrate using Nd3+: YAG laser for photovoltaics devices AK Shukla, K Akash, IA Palani, A Manivannan Materials Science and Engineering: B 226, 78-85, 2017 | 17* | 2017 |
| Femtosecond laser-induced ultrafast transient snapshots and crystallization dynamics in phase change material S Sahu, R Sharma, KV Adarsh, A Manivannan Optics Letters 42 (13), 2503-2506, 2017 | 15 | 2017 |
| Direct evidence for structural transformation and higher thermal stability of amorphous insbte phase change material SK Pandey, A Manivannan Scripta Materialia 192, 73-77, 2021 | 14 | 2021 |
| Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material MS Arjunan, A Mondal, A Das, KV Adarsh, A Manivannan Optics Letters 44 (12), 3134-3137, 2019 | 14 | 2019 |
| Extremely High Contrast Multi‐Level Resistance States of In3SbTe2 Device for High Density Non‐Volatile Memory Applications SK Pandey, A Manivannan physica status solidi (RRL)–Rapid Research Letters 11 (9), 1700227, 2017 | 14 | 2017 |
| Evidence for a thermally reversing window in bulk Ge–Te–Si glasses revealed by alternating differential scanning calorimetry M Anbarasu, KK Singh, S Asokan Philosophical Magazine 88 (4), 599-605, 2008 | 14 | 2008 |
Nishant SaxenaUniversity of Muenster, Germany確認したメール アドレス: uni-muenster.de
