Geert Hellings
Geert Hellings
Verified email at imec.be
Title
Cited by
Cited by
Year
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
2862008
Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1302008
Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p n Junctions
G Eneman, M Wiot, A Brugere, OSI Casain, S Sonde, DP Brunco, ...
IEEE transactions on electron devices 55 (9), 2287-2296, 2008
982008
Electrical TCAD simulations of a germanium pMOSFET technology
G Hellings, G Eneman, R Krom, B De Jaeger, J Mitard, A De Keersgieter, ...
IEEE transactions on electron devices 57 (10), 2539-2546, 2010
952010
Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's
TE Chang, C Huang, T Wang
IEEE Transactions on electron devices 42 (4), 738-743, 1995
941995
Challenges and opportunities in advanced Ge pMOSFETs
E Simoen, J Mitard, G Hellings, G Eneman, B De Jaeger, L Witters, ...
Materials Science in Semiconductor Processing 15 (6), 588-600, 2012
852012
Germanium for advanced CMOS anno 2009: A SWOT analysis
M Caymax, G Eneman, F Bellenger, C Merckling, A Delabie, G Wang, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
682009
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
632011
Impact of EOT scaling down to 0.85 nm on 70nm Ge-pFETs technology with STI
J Mitard, C Shea, B DeJaeger, A Pristera, G Wang, M Houssa, G Eneman, ...
2009 Symposium on VLSI Technology, 82-83, 2009
582009
Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique
N Waldron, G Wang, ND Nguyen, T Orzali, C Merckling, G Brammertz, ...
ECS Transactions 45 (4), 115, 2012
572012
High performance 70-nm germanium pMOSFETs with boron LDD implants
G Hellings, J Mitard, G Eneman, B De Jaeger, DP Brunco, D Shamiryan, ...
IEEE Electron Device Letters 30 (1), 88-90, 2008
542008
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
522018
Scalable quantum well device and method for manufacturing the same
G Hellings, G Eneman, M Meuris
US Patent 7,915,608, 2011
522011
Ultra shallow arsenic junctions in germanium formed by millisecond laser annealing
G Hellings, E Rosseel, E Simoen, D Radisic, DH Petersen, O Hansen, ...
Electrochemical and Solid State Letters 14 (1), H39, 2010
442010
Quantification of drain extension leakage in a scaled bulk Germanium PMOS technology
G Eneman, B De Jaeger, E Simoen, DP Brunco, G Hellings, J Mitard, ...
IEEE transactions on electron devices 56 (12), 3115-3122, 2009
392009
Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures
B Benbakhti, JS Ayubi-Moak, K Kalna, D Lin, G Hellings, G Brammertz, ...
Microelectronics Reliability 50 (3), 360-364, 2010
312010
Implantation, diffusion, activation, and recrystallization of gallium implanted in preamorphized and crystalline germanium
G Hellings, C Wuendisch, G Eneman, E Simoen, T Clarysse, M Meuris, ...
Electrochemical and Solid State Letters 12 (12), H417, 2009
302009
Silicon and selenium implantation and activation in In0. 53Ga0. 47As under low thermal budget conditions
A Alian, G Brammertz, N Waldron, C Merckling, G Hellings, HC Lin, ...
Microelectronic engineering 88 (2), 155-158, 2011
292011
Quantum-barriers and ground-plane isolation: A path for scaling bulk-FinFET technologies to the 7 nm-node and beyond
G Eneman, G Hellings, A De Keersgieter, N Collaert, A Thean
2013 IEEE International Electron Devices Meeting, 12.3. 1-12.3. 4, 2013
272013
Record low contact resistivity to n-type Ge for CMOS and memory applications
K Martens, A Firrincieli, R Rooyackers, B Vincent, R Loo, S Locorotondo, ...
2010 International Electron Devices Meeting, 18.4. 1-18.4. 4, 2010
272010
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