Walter Hansch
Walter Hansch
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Zitiert von
Zitiert von
Complementary tunneling transistor for low power application
PF Wang, K Hilsenbeck, T Nirschl, M Oswald, C Stepper, M Weis, ...
Solid-State Electronics 48 (12), 2281-2286, 2004
A vertical MOS-gated Esaki tunneling transistor in silicon
W Hansch, C Fink, J Schulze, I Eisele
Thin Solid Films 369 (1-2), 387-389, 2000
Scaling properties and electromigration resistance of sputtered Ag metallization lines
M Hauder, J Gstöttner, W Hansch, D Schmitt-Landsiedel
Applied Physics Letters 78 (6), 838-840, 2001
The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes
T Nirschl, PF Wang, C Weber, J Sedlmeir, R Heinrich, R Kakoschke, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
T Nirschl, J Fischer, M Fulde, A Bargagli-Stoffi, M Sterkel, J Sedlmeir, ...
Solid-state electronics 50 (1), 44-51, 2006
Ozone-enhanced molecular beam deposition of nickel oxide (NiO) for sensor applications
A Neubecker, T Pompl, T Doll, W Hansch, I Eisele
Thin solid films 310 (1-2), 19-23, 1997
Simulation of the Esaki-tunneling FET
PF Wang, T Nirschl, D Schmitt-Landsiedel, W Hansch
Solid-State Electronics 47 (7), 1187-1192, 2003
Thermal stability of titanium nitride diffusion barrier films for advanced silver interconnects
L Gao, J Gstöttner, R Emling, M Balden, C Linsmeier, A Wiltner, W Hansch, ...
Microelectronic engineering 76 (1-4), 76-81, 2004
The tunnelling field effect transistors (TFET): the temperature dependence, the simulation model, and its application
T Nirschl, PF Wang, W Hansch, D Schmitt-Landsiedel
2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No …, 2004
Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer
D Sarkar, H Gossner, W Hansch, K Banerjee
Applied Physics Letters 102 (2), 023110, 2013
Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy
W Hansch, A Nakajima, S Yokoyama
Applied physics letters 75 (11), 1535-1537, 1999
The planar-doped-barrier-FET: MOSFET overcomes conventional limitations
W Hansch, VR Rao, I Eisele
27th European Solid-State Device Research Conference, 624-627, 1997
Performance improvement in vertical surface tunneling transistors by a boron surface phase
W Hansch, P Borthen, J Schulze, C Fink, T Sulima, I Eisele
Japanese Journal of Applied Physics 40 (5R), 3131, 2001
Electromigration resistance of sputtered silver lines using different patterning techniques
M Hauder, W Hansch, J Gstöttner, D Schmitt-Landsiedel
Microelectronic engineering 60 (1-2), 51-57, 2002
Etching characteristics of Si and SiO2 with a low energy argon/hydrogen dc plasma source
A Strass, W Hansch, P Bieringer, A Neubecker, F Kaesen, A Fischer, ...
Surface and Coatings Technology 97 (1-3), 158-162, 1997
Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs
W Hansch, VR Rao, C Fink, F Kaesen, I Eisele
Thin solid films 321 (1-2), 206-214, 1998
Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry
A Strass, P Bieringer, W Hansch, V Fuenzalida, A Alvarez, J Luna, I Martil, ...
Thin Solid Films 349 (1-2), 135-146, 1999
Optimization of the channel doping profile of vertical sub-100 nm MOSFETs
F Kaesen, C Fink, KG Anil, W Hansch, T Doll, T Grabolla, H Schreiber, ...
Thin Solid Films 336 (1-2), 309-312, 1998
Silicon Molecular Beam Epitaxy on Hydrogen-Plasma-Cleaned Substrates
W Hansch, E Hammerl, W Kiunke, I Eisele, J Ramm, E Beck
Japanese journal of applied physics 33 (4S), 2263, 1994
Gate-controlled resonant interband tunneling in silicon
S Sedlmaier, KK Bhuwalka, A Ludsteck, M Schmidt, J Schulze, W Hansch, ...
Applied physics letters 85 (10), 1707-1709, 2004
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