Zihui Wang
Zihui Wang
Avalanche Technology
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Damping in yttrium iron garnet nanoscale films capped by platinum
Y Sun, H Chang, M Kabatek, YY Song, Z Wang, M Jantz, W Schneider, ...
Physical review letters 111 (10), 106601, 2013
Control of spin waves in a thin film ferromagnetic insulator through interfacial spin scattering
Z Wang, Y Sun, M Wu, V Tiberkevich, A Slavin
Physical review letters 107 (14), 146602, 2011
Magnetic random access memory having perpendicular enhancement layer
H Gan, Y Huai, Y Zhou, X Wang, Z Wang, BK Yen
US Patent 9,070,855, 2015
Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer
Z Wang, Y Zhou, H Gan, Y Huai
US Patent 9,608,038, 2017
Electric control of magnetization relaxation in thin film magnetic insulators
Z Wang, Y Sun, YY Song, M Wu, H Schultheiß, JE Pearson, A Hoffmann
Applied Physics Letters 99 (16), 162511, 2011
Millimeter wave phase shifter based on ferromagnetic resonance in a hexagonal barium ferrite thin film
Z Wang, YY Song, Y Sun, J Bevivino, M Wu, V Veerakumar, TJ Fal, ...
Applied Physics Letters 97 (7), 072509, 2010
In-plane c-axis oriented barium ferrite films with self-bias and low microwave loss
YY Song, J Das, Z Wang, W Tong, CE Patton
Applied Physics Letters 93, 172503, 2008
Chaotic spin-wave solitons in magnetic film feedback rings
Z Wang, A Hagerstrom, JQ Anderson, W Tong, M Wu, LD Carr, R Eykholt, ...
Physical review letters 107 (11), 114102, 2011
Observation of microwave-assisted magnetization reversal in thin films through ferromagnetic resonance measurements
C Nistor, K Sun, Z Wang, M Wu, C Mathieu, M Hadley
Applied Physics Letters 95 (1), 012504, 2009
High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications
Y Huai, H Gan, Z Wang, P Xu, X Hao, BK Yen, R Malmhall, N Pakala, ...
Applied Physics Letters 112 (9), 092402, 2018
Experimental observation of single skyrmion signatures in a magnetic tunnel junction
NE Penthorn, X Hao, Z Wang, Y Huai, HW Jiang
Physical Review Letters 122 (25), 257201, 2019
Threshold switching selector and 1S1R integration development for 3D cross-point STT-MRAM
H Yang, X Hao, Z Wang, R Malmhall, H Gan, K Satoh, J Zhang, DH Jung, ...
2017 IEEE International Electron Devices Meeting (IEDM), 38.1. 1-38.1. 4, 2017
Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer
H Gan, R Malmhall, Z Wang, BK Yen, J Zhang, X Wang, Y Zhou, X Hao, ...
Applied Physics Letters 105 (19), 192403, 2014
Chirped-microwave assisted magnetization reversal
Z Wang, M Wu
Journal of Applied Physics 105 (9), 093903, 2009
Bit error rate investigation of spin-transfer-switched magnetic tunnel junctions
Z Wang, Y Zhou, J Zhang, Y Huai
Applied Physics Letters 101 (14), 142406, 2012
Shields for magnetic memory chip packages
Y Zhou, B Sardinha, RY Ranjan, E Abedifard, RK Malmhall, Z Wang, ...
US Patent 9,070,692, 2015
Magnetoresistive logic cell and method of use
Y Zhou, Z Wang, Y Huai, RY Ranjan, RK Malmhall
US Patent 8,885,395, 2014
Temperature and frequency characteristics of low-loss MnZn ferrite in a wide temperature range
K Sun, Z Lan, Z Yu, Z Xu, X Jiang, Z Wang, Z Liu, M Luo
Journal of Applied Physics 109 (10), 106103, 2011
Magnetic random access memory with perpendicular enhancement layer
H Gan, Y Huai, Y Zhou, Z Wang, X Wang, BK Yen, X Hao
US Patent 9,082,951, 2015
Voltage-switched magnetic random access memory (MRAM) and method for using the same
Z Wang, X Wang, H Gan, Y Zhou, Y Huai
US Patent 9,443,577, 2016
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20