Servin Rathi
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Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices
S Rathi, I Lee, D Lim, J Wang, Y Ochiai, N Aoki, K Watanabe, T Taniguchi, ...
Nano letters 15 (8), 5017-5024, 2015
Dielectrophoretic assembly of Pt nanoparticle-reduced graphene oxide nanohybrid for highly-sensitive multiple gas sensor
J Wang, S Rathi, B Singh, I Lee, S Maeng, HI Joh, GH Kim
Sensors and Actuators B: Chemical 220, 755-761, 2015
Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates
C Lee, S Rathi, MA Khan, D Lim, Y Kim, SJ Yun, DH Youn, K Watanabe, ...
Nanotechnology 29 (33), 335202, 2018
Dielectrophoresis of graphene oxide nanostructures for hydrogen gas sensor at room temperature
J Wang, B Singh, JH Park, S Rathi, I Lee, S Maeng, HI Joh, CH Lee, ...
Sensors and Actuators B: Chemical 194, 296-302, 2014
Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors.
I Lee, S Rathi, D Lim, L Li, J Park, Y Lee, KS Yi, KP Dhakal, J Kim, C Lee, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (43), 9519-9525, 2016
Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate
M Kang, S Rathi, I Lee, D Lim, J Wang, L Li, MA Khan, GH Kim
Applied Physics Letters 106 (14), 2015
Alternating current dielectrophoresis optimization of Pt-decorated graphene oxide nanostructures for proficient hydrogen gas sensor
J Wang, S Rathi, B Singh, I Lee, HI Joh, GH Kim
ACS applied materials & interfaces 7 (25), 13768-13775, 2015
Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe2 field-effect transistor
I Lee, S Rathi, L Li, D Lim, MA Khan, ES Kannan, GH Kim
Nanotechnology 26 (45), 455203, 2015
Tunable electrical properties of multilayer HfSe 2 field effect transistors by oxygen plasma treatment
M Kang, S Rathi, I Lee, L Li, MA Khan, D Lim, Y Lee, J Park, SJ Yun, ...
Nanoscale 9 (4), 1645-1652, 2017
Unravelling the switching mechanisms in electric field induced insulator–metal transitions in VO2 nanobeams
S Rathi, JH Park, I Lee, JM Baik, KS Yi, GH Kim
Journal of Physics D: Applied Physics 47 (29), 295101, 2014
Observation of negative differential resistance in mesoscopic graphene oxide devices
S Rathi, I Lee, M Kang, D Lim, Y Lee, S Yamacli, HI Joh, S Kim, SW Kim, ...
Scientific reports 8 (1), 7144, 2018
Low temperature hydrogen sensing using reduced graphene oxide and tin oxide nanoflowers based hybrid structure
A Venkatesan, S Rathi, IY Lee, J Park, D Lim, GH Kim, ES Kannan
Semiconductor Science and Technology 31 (12), 125014, 2016
Poly-4-vinylphenol and poly (melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics
I Lee, HY Park, J Park, G Yoo, MH Lim, J Park, S Rathi, WS Jung, J Kim, ...
Nanoscale 6 (7), 3830-3836, 2014
Molybdenum disulfide nanoparticles decorated reduced graphene oxide: Highly sensitive and selective hydrogen sensor
A Venkatesan, S Rathi, I Lee, J Park, D Lim, M Kang, HI Joh, GH Kim, ...
Nanotechnology 28 (36), 365501, 2017
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
MA Khan, S Rathi, D Lim, SJ Yun, DH Youn, K Watanabe, T Taniguchi, ...
Chemistry of Materials 30 (3), 1011-1016, 2018
Postfabrication Annealing Effects on Insulator–Metal Transitions in VO2 Thin-Film Devices
S Rathi, I Lee, JH Park, BJ Kim, HT Kim, GH Kim
ACS applied materials & interfaces 6 (22), 19718-19725, 2014
Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs–InGaAs symmetric double-gate HEMT
S Rathi, J Jogi, M Gupta, RS Gupta
Microelectronics Reliability 49 (12), 1508-1514, 2009
Tunable electron and hole injection enabled by atomically thin tunneling layer for improved contact resistance and dual channel transport in MoS2/WSe2 van der Waals heterostructure
MA Khan, S Rathi, C Lee, D Lim, Y Kim, SJ Yun, DH Youn, GH Kim
ACS applied materials & interfaces 10 (28), 23961-23967, 2018
Photodetector based on multilayer SnSe2 field effect transistor
M Kang, S Rathi, I Lee, L Li, MA Khan, D Lim, Y Lee, J Park, AT Pham, ...
Journal of Nanoscience and Nanotechnology 18 (6), 4243-4247, 2018
High performance MoS2-based field-effect transistor enabled by hydrazine doping
D Lim, ES Kannan, I Lee, S Rathi, L Li, Y Lee, MA Khan, M Kang, J Park, ...
Nanotechnology 27 (22), 225201, 2016
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