Holger von Wenckstern
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High electron mobility of epitaxial ZnO thin films on -plane sapphire grown by multistep pulsed-laser deposition
EM Kaidashev, M Lorenz, H Von Wenckstern, A Rahm, HC Semmelhack, ...
Applied Physics Letters 82 (22), 3901-3903, 2003
6552003
Optical and electrical properties of epitaxial (Mg, Cd) xZn1− xO, ZnO, and ZnO:(Ga, Al) thin films on c-plane sapphire grown by pulsed laser deposition
M Lorenz, EM Kaidashev, H Von Wenckstern, V Riede, C Bundesmann, ...
Solid-State Electronics 47 (12), 2205-2209, 2003
1802003
Mean barrier height of Pd Schottky contacts on ZnO thin films
H von Wenckstern, G Biehne, RA Rahman, H Hochmuth, M Lorenz, ...
Applied physics letters 88 (9), 092102, 2006
1702006
Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy
G Brauer, W Anwand, W Skorupa, J Kuriplach, O Melikhova, C Moisson, ...
Physical Review B 74 (4), 045208, 2006
1522006
Cuprous iodide–ap‐type transparent semiconductor: History and novel applications
M Grundmann, FL Schein, M Lorenz, T Böntgen, J Lenzner, ...
physica status solidi (a) 210 (9), 1671-1703, 2013
1482013
Recent Progress on ZnO‐Based Metal‐Semiconductor Field‐Effect Transistors and Their Application in Transparent Integrated Circuits
H Frenzel, A Lajn, H Von Wenckstern, M Lorenz, F Schein, Z Zhang, ...
Advanced Materials 22 (47), 5332-5349, 2010
1442010
Transparent semiconducting oxides: Materials and devices
M Grundmann, H Frenzel, A Lajn, M Lorenz, F Schein, H von Wenckstern
Physica status solidi (a) 207 (6), 1437-1449, 2010
1412010
Lateral homogeneity of Schottky contacts on -type ZnO
H Von Wenckstern, EM Kaidashev, M Lorenz, H Hochmuth, G Biehne, ...
Applied physics letters 84 (1), 79-81, 2004
1282004
Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition
BQ Cao, M Lorenz, A Rahm, H Von Wenckstern, C Czekalla, J Lenzner, ...
Nanotechnology 18 (45), 455707, 2007
1272007
Transparent p-CuI/n-ZnO heterojunction diodes
FL Schein, H von Wenckstern, M Grundmann
Applied Physics Letters 102 (9), 092109, 2013
1032013
Anionic and cationic substitution in ZnO
H Von Wenckstern, H Schmidt, M Brandt, A Lajn, R Pickenhain, M Lorenz, ...
Progress in Solid State Chemistry 37 (2-3), 153-172, 2009
932009
Group‐III sesquioxides: growth, physical properties and devices
H Von Wenckstern
Advanced Electronic Materials 3 (9), 1600350, 2017
922017
ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates
H Frenzel, A Lajn, M Brandt, H Wenckstern, G Biehne, H Hochmuth, ...
Applied Physics Letters 92 (19), 192108, 2008
912008
Deep acceptor states in ZnO single crystals
H Von Wenckstern, R Pickenhain, H Schmidt, M Brandt, G Biehne, ...
Applied Physics Letters 89 (9), 092122, 2006
802006
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β‐Ga2O3 thin films grown by pulsed laser deposition
D Splith, S Müller, F Schmidt, H Von Wenckstern, JJ van Rensburg, ...
physica status solidi (a) 211 (1), 40-47, 2014
782014
Control of the conductivity of Si‐doped β‐Ga2O3 thin films via growth temperature and pressure
S Müller, H von Wenckstern, D Splith, F Schmidt, M Grundmann
physica status solidi (a) 211 (1), 34-39, 2014
712014
Defects in hydrothermally grown bulk ZnO
H Von Wenckstern, H Schmidt, M Grundmann, MW Allen, P Miller, ...
Applied Physics Letters 91 (2), 022913, 2007
702007
Electrical and magnetic properties of RE-doped ZnO thin films (RE= Gd, Nd)
M Ungureanu, H Schmidt, Q Xu, H von Wenckstern, D Spemann, ...
Superlattices and Microstructures 42 (1-6), 231-235, 2007
702007
Correlation of pre‐breakdown sites and bulk defects in multicrystalline silicon solar cells
D Lausch, K Petter, H Wenckstern, M Grundmann
physica status solidi (RRL)–Rapid Research Letters 3 (2‐3), 70-72, 2009
682009
p‐type conducting ZnO: P microwires prepared by direct carbothermal growth
BQ Cao, M Lorenz, M Brandt, H Von Wenckstern, J Lenzner, G Biehne, ...
physica status solidi (RRL)–Rapid Research Letters 2 (1), 37-39, 2008
602008
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