Holger von Wenckstern
Zitiert von
Zitiert von
High electron mobility of epitaxial ZnO thin films on -plane sapphire grown by multistep pulsed-laser deposition
EM Kaidashev, M Lorenz, H Von Wenckstern, A Rahm, HC Semmelhack, ...
Applied Physics Letters 82 (22), 3901-3903, 2003
Optical and electrical properties of epitaxial (Mg, Cd) xZn1− xO, ZnO, and ZnO:(Ga, Al) thin films on c-plane sapphire grown by pulsed laser deposition
M Lorenz, EM Kaidashev, H Von Wenckstern, V Riede, C Bundesmann, ...
Solid-State Electronics 47 (12), 2205-2209, 2003
Mean barrier height of Pd Schottky contacts on ZnO thin films
H von Wenckstern, G Biehne, RA Rahman, H Hochmuth, M Lorenz, ...
Applied physics letters 88 (9), 092102, 2006
Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy
G Brauer, W Anwand, W Skorupa, J Kuriplach, O Melikhova, C Moisson, ...
Physical Review B 74 (4), 045208, 2006
Cuprous iodide–ap‐type transparent semiconductor: History and novel applications
M Grundmann, FL Schein, M Lorenz, T Böntgen, J Lenzner, ...
physica status solidi (a) 210 (9), 1671-1703, 2013
Recent Progress on ZnO‐Based Metal‐Semiconductor Field‐Effect Transistors and Their Application in Transparent Integrated Circuits
H Frenzel, A Lajn, H Von Wenckstern, M Lorenz, F Schein, Z Zhang, ...
Advanced Materials 22 (47), 5332-5349, 2010
Transparent semiconducting oxides: Materials and devices
M Grundmann, H Frenzel, A Lajn, M Lorenz, F Schein, H von Wenckstern
Physica status solidi (a) 207 (6), 1437-1449, 2010
Lateral homogeneity of Schottky contacts on -type ZnO
H Von Wenckstern, EM Kaidashev, M Lorenz, H Hochmuth, G Biehne, ...
Applied physics letters 84 (1), 79-81, 2004
Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition
BQ Cao, M Lorenz, A Rahm, H Von Wenckstern, C Czekalla, J Lenzner, ...
Nanotechnology 18 (45), 455707, 2007
Transparent p-CuI/n-ZnO heterojunction diodes
FL Schein, H von Wenckstern, M Grundmann
Applied Physics Letters 102 (9), 092109, 2013
Anionic and cationic substitution in ZnO
H Von Wenckstern, H Schmidt, M Brandt, A Lajn, R Pickenhain, M Lorenz, ...
Progress in Solid State Chemistry 37 (2-3), 153-172, 2009
Group‐III sesquioxides: growth, physical properties and devices
H Von Wenckstern
Advanced Electronic Materials 3 (9), 1600350, 2017
ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates
H Frenzel, A Lajn, M Brandt, H Wenckstern, G Biehne, H Hochmuth, ...
Applied Physics Letters 92 (19), 192108, 2008
Deep acceptor states in ZnO single crystals
H Von Wenckstern, R Pickenhain, H Schmidt, M Brandt, G Biehne, ...
Applied Physics Letters 89 (9), 092122, 2006
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β‐Ga2O3 thin films grown by pulsed laser deposition
D Splith, S Müller, F Schmidt, H Von Wenckstern, JJ van Rensburg, ...
physica status solidi (a) 211 (1), 40-47, 2014
Control of the conductivity of Si‐doped β‐Ga2O3 thin films via growth temperature and pressure
S Müller, H von Wenckstern, D Splith, F Schmidt, M Grundmann
physica status solidi (a) 211 (1), 34-39, 2014
Defects in hydrothermally grown bulk ZnO
H Von Wenckstern, H Schmidt, M Grundmann, MW Allen, P Miller, ...
Applied Physics Letters 91 (2), 022913, 2007
Electrical and magnetic properties of RE-doped ZnO thin films (RE= Gd, Nd)
M Ungureanu, H Schmidt, Q Xu, H von Wenckstern, D Spemann, ...
Superlattices and Microstructures 42 (1-6), 231-235, 2007
Correlation of pre‐breakdown sites and bulk defects in multicrystalline silicon solar cells
D Lausch, K Petter, H Wenckstern, M Grundmann
physica status solidi (RRL)–Rapid Research Letters 3 (2‐3), 70-72, 2009
p‐type conducting ZnO: P microwires prepared by direct carbothermal growth
BQ Cao, M Lorenz, M Brandt, H Von Wenckstern, J Lenzner, G Biehne, ...
physica status solidi (RRL)–Rapid Research Letters 2 (1), 37-39, 2008
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20