Dirk Fahle
Dirk Fahle
Aixtron SE
Bestätigte E-Mail-Adresse bei aixtron.com
Zitiert von
Zitiert von
The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices
H Yacoub, D Fahle, M Finken, H Hahn, C Blumberg, W Prost, H Kalisch, ...
Semiconductor Science and Technology 29 (11), 115012, 2014
Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates
X Li, K Geens, W Guo, S You, M Zhao, D Fahle, V Odnoblyudov, ...
IEEE Electron Device Letters 40 (9), 1499-1502, 2019
Effect of different carbon doping techniques on the dynamic properties of GaN-on-Si buffers
H Yacoub, C Mauder, S Leone, M Eickelkamp, D Fahle, M Heuken, ...
IEEE Transactions on Electron Devices 64 (3), 991-997, 2017
In situ SiN passivation of AlInN/GaN heterostructures by MOVPE
H Behmenburg, LR Khoshroo, C Mauder, N Ketteniss, KH Lee, ...
physica status solidi c 7 (7‐8), 2104-2106, 2010
Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors
H Yacoub, D Fahle, M Eickelkamp, A Wille, C Mauder, M Heuken, ...
Journal of Applied Physics 119 (13), 135704, 2016
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
C Mauder, B Reuters, KR Wang, D Fahle, A Trampert, MV Rzheutskii, ...
Journal of crystal growth 315 (1), 246-249, 2011
45‐3: Invited Paper: Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing
A Beckers, D Fahle, C Mauder, T Kruecken, AR Boyd, M Heuken
SID Symposium Digest of Technical Papers 49 (1), 601-603, 2018
Electrical properties of quasi-vertical Schottky diodes
W Witte, D Fahle, H Koch, M Heuken, H Kalisch, A Vescan
Semiconductor Science and Technology 27 (8), 085015, 2012
Effect of carbon doping level on static and dynamic properties of AlGaN/GaN heterostructures grown on silicon
H Yacoub, T Zweipfennig, G Lükens, H Behmenburg, D Fahle, ...
IEEE Transactions on Electron Devices 65 (8), 3192-3198, 2018
On the anisotropic wafer curvature of GaN-based heterostructures on Si (1 1 0) substrates grown by MOVPE
C Mauder, ID Booker, D Fahle, H Boukiour, H Behmenburg, LR Khoshroo, ...
Journal of crystal growth 315 (1), 220-223, 2011
Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si (111) substrate
M Eickelkamp, D Fahle, J Lindner, M Heuken, C Lautensack, H Kalisch, ...
physica status solidi (a) 207 (6), 1342-1344, 2010
Characterization of charge injection and photovoltaic effects of hybrid inorganic-organic GaN/pentacene heterostructures
M Slawinski, M Weingarten, S Axmann, F Urbain, D Fahle, M Heuken, ...
Applied Physics Letters 103 (15), 193_1, 2013
HCl-assisted growth of GaN and AlN
D Fahle, D Brien, M Dauelsberg, G Strauch, H Kalisch, M Heuken, ...
Journal of crystal growth 370, 30-35, 2013
Growth of GaN in a planetary MOCVD hotwall system
D Fahle, H Behmenburg, C Mauder, H Kalisch, RH Jansen, H Kitahata, ...
physica status solidi c 8 (7‐8), 2041-2043, 2011
The effect of AlN nucleation growth conditions on the inversion channel formation at the AlN/silicon interface
H Yacoub, M Eickelkamp, D Fahle, C Mauder, A Alam, M Heuken, ...
2015 73rd Annual Device Research Conference (DRC), 175-176, 2015
Deposition control during GaN MOVPE
D Fahle, R Puesche, M Mukinovic, M Dauelsberg, R Schreiner, H Kalisch, ...
Materials of CS MANTECH Conference, 399-402, 2013
In-situ decomposition and etching of AlN and GaN in the presence of HCl
D Fahle, T Kruecken, M Dauelsberg, H Kalisch, M Heuken, A Vescan
Journal of crystal growth 393, 89-92, 2014
Characterization of charge carrier injection in organic and hybrid organic/inorganic semiconductor devices by capacitance-voltage measurements
M Weingarten, M Slawinski, F Urbain, D Fahle, D Bertram, M Heuken, ...
Organic Light Emitting Materials and Devices XVI 8476, 84761H, 2012
Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs
L Heuken, M Kortemeyer, A Ottaviani, M Schröder, M Alomari, D Fahle, ...
IEEE Transactions on Electron Devices 67 (3), 1113-1119, 2020
CMOS-compatible Ti/Al ohmic contacts (Rc <0.3 Ωmm) for u-AlGaN/AlN/GaN HEMTs by low temperature annealing (<450 °C)
Z Liu, M Heuken, D Fahle, GI Ng, T Palacios
72nd Device Research Conference, 75-76, 2014
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