| Hydrogen interactions with defects in crystalline solids SM Myers, MI Baskes, HK Birnbaum, JW Corbett, GG DeLeo, ... Reviews of Modern Physics 64 (2), 559, 1992 | 544 | 1992 |
| Meier and SK Estreicher PF Maric Mater. Sci. Forum 83, 87, 1992 | 365 | 1992 |
| Hydrogen-related defects in crystalline semiconductors: a theorist's perspective SK Estreicher Materials Science and Engineering: R: Reports 14 (7-8), 319-412, 1995 | 315 | 1995 |
| Hydrogen in silicon: A discussion of diffusion and passivation mechanisms BL Sopori, X Deng, JP Benner, A Rohatgi, P Sana, SK Estreicher, YK Park, ... Solar Energy Materials and Solar Cells 41, 159-169, 1996 | 206 | 1996 |
| Vacancy aggregates in silicon JL Hastings, SK Estreicher, PA Fedders Physical Review B 56 (16), 10215, 1997 | 168 | 1997 |
| Equilibrium sites and electronic structure of interstitial hydrogen in Si S Estreicher Physical Review B 36 (17), 9122, 1987 | 151 | 1987 |
| Bond-centered hydrogen or muonium in diamond: the explanation for anomalous muonium and an example of metastability TL Estle, S Estreicher, DS Marynick Physical review letters 58 (15), 1547, 1987 | 148 | 1987 |
| Theory of defects in semiconductors DA Drabold, SK Estreicher Springer, 2007 | 120 | 2007 |
| Interstitial O in Si and its interactions with H SK Estreicher Physical Review B 41 (14), 9886, 1990 | 120 | 1990 |
| Hydrogen passivation of shallow acceptors and donors in c-Si: Comparisons and trends SK Estreicher, L Throckmorton, DS Marynick Physical Review B 39 (18), 13241, 1989 | 100 | 1989 |
| Unexpected dynamics for self-interstitial clusters in silicon SK Estreicher, M Gharaibeh, PA Fedders, P Ordejón Physical review letters 86 (7), 1247, 2001 | 97 | 2001 |
| The ring-hexavacany in silicon: A stable and inactive defect SK Estreicher, JL Hastings, PA Fedders Applied physics letters 70 (4), 432-434, 1997 | 97 | 1997 |
| Defect-induced dissociation of H 2 in silicon SK Estreicher, JL Hastings, PA Fedders Physical Review B 57 (20), R12663, 1998 | 87 | 1998 |
| Interstitial aggregates and a new model for the I1/W optical centre in silicon BJ Coomer, JP Goss, R Jones, S Öberg, PR Briddon Physica B: Condensed Matter 273, 505-508, 1999 | 85 | 1999 |
| Rich chemistry of copper in crystalline silicon SK Estreicher Physical Review B 60 (8), 5375, 1999 | 83 | 1999 |
| Noble-gas-related defects in Si and the origin of the 1018 meV photoluminescence line SK Estreicher, J Weber, A Derecskei-Kovacs, DS Marynick Physical Review B 55 (8), 5037, 1997 | 79 | 1997 |
| First-principles calculations of vibrational lifetimes and decay channels: Hydrogen-related modes in Si D West, SK Estreicher Physical review letters 96 (11), 115504, 2006 | 78 | 2006 |
| Hydrogen and hydrogen dimers in c-C, Si, Ge, and α-Sn SK Estreicher, MA Roberson, DM Maric Physical Review B 50 (23), 17018, 1994 | 72 | 1994 |
| Lattice location and stability of ion implanted Cu in Si U Wahl, A Vantomme, G Langouche, JG Correia, ISOLDE collaboration Physical review letters 84 (7), 1495, 2000 | 71 | 2000 |
| Heat capacity and phonon mean free path of wurtzite GaN BA Danilchenko, T Paszkiewicz, S Wolski, A Jeżowski, T Plackowski Applied physics letters 89 (6), 061901, 2006 | 70 | 2006 |
Michael StavolaProfessor of Physics, Lehigh UniversityVerified email at lehigh.edu
