S.K. Estreicher
S.K. Estreicher
Verified email at ttu.edu - Homepage
Title
Cited by
Cited by
Year
Hydrogen interactions with defects in crystalline solids
SM Myers, MI Baskes, HK Birnbaum, JW Corbett, GG DeLeo, ...
Reviews of Modern Physics 64 (2), 559, 1992
5441992
Meier and SK Estreicher
PF Maric
Mater. Sci. Forum 83, 87, 1992
3651992
Hydrogen-related defects in crystalline semiconductors: a theorist's perspective
SK Estreicher
Materials Science and Engineering: R: Reports 14 (7-8), 319-412, 1995
3151995
Hydrogen in silicon: A discussion of diffusion and passivation mechanisms
BL Sopori, X Deng, JP Benner, A Rohatgi, P Sana, SK Estreicher, YK Park, ...
Solar Energy Materials and Solar Cells 41, 159-169, 1996
2061996
Vacancy aggregates in silicon
JL Hastings, SK Estreicher, PA Fedders
Physical Review B 56 (16), 10215, 1997
1681997
Equilibrium sites and electronic structure of interstitial hydrogen in Si
S Estreicher
Physical Review B 36 (17), 9122, 1987
1511987
Bond-centered hydrogen or muonium in diamond: the explanation for anomalous muonium and an example of metastability
TL Estle, S Estreicher, DS Marynick
Physical review letters 58 (15), 1547, 1987
1481987
Theory of defects in semiconductors
DA Drabold, SK Estreicher
Springer, 2007
1202007
Interstitial O in Si and its interactions with H
SK Estreicher
Physical Review B 41 (14), 9886, 1990
1201990
Hydrogen passivation of shallow acceptors and donors in c-Si: Comparisons and trends
SK Estreicher, L Throckmorton, DS Marynick
Physical Review B 39 (18), 13241, 1989
1001989
Unexpected dynamics for self-interstitial clusters in silicon
SK Estreicher, M Gharaibeh, PA Fedders, P Ordejón
Physical review letters 86 (7), 1247, 2001
972001
The ring-hexavacany in silicon: A stable and inactive defect
SK Estreicher, JL Hastings, PA Fedders
Applied physics letters 70 (4), 432-434, 1997
971997
Defect-induced dissociation of H 2 in silicon
SK Estreicher, JL Hastings, PA Fedders
Physical Review B 57 (20), R12663, 1998
871998
Interstitial aggregates and a new model for the I1/W optical centre in silicon
BJ Coomer, JP Goss, R Jones, S Öberg, PR Briddon
Physica B: Condensed Matter 273, 505-508, 1999
851999
Rich chemistry of copper in crystalline silicon
SK Estreicher
Physical Review B 60 (8), 5375, 1999
831999
Noble-gas-related defects in Si and the origin of the 1018 meV photoluminescence line
SK Estreicher, J Weber, A Derecskei-Kovacs, DS Marynick
Physical Review B 55 (8), 5037, 1997
791997
First-principles calculations of vibrational lifetimes and decay channels: Hydrogen-related modes in Si
D West, SK Estreicher
Physical review letters 96 (11), 115504, 2006
782006
Hydrogen and hydrogen dimers in c-C, Si, Ge, and α-Sn
SK Estreicher, MA Roberson, DM Maric
Physical Review B 50 (23), 17018, 1994
721994
Lattice location and stability of ion implanted Cu in Si
U Wahl, A Vantomme, G Langouche, JG Correia, ISOLDE collaboration
Physical review letters 84 (7), 1495, 2000
712000
Heat capacity and phonon mean free path of wurtzite GaN
BA Danilchenko, T Paszkiewicz, S Wolski, A Jeżowski, T Plackowski
Applied physics letters 89 (6), 061901, 2006
702006
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