| The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications RJ Trew, JB Yan, PM Mock Proceedings of the IEEE 79 (5), 598-620, 1991 | 539 | 1991 |
| SiC and GaN transistors-is there one winner for microwave power applications? RJ Trew Proceedings of the IEEE 90 (6), 1032-1047, 2002 | 325 | 2002 |
| AlGaN/GaN HFET reliability RJ Trew, DS Green, JB Shealy IEEE Microwave magazine 10 (4), 116-127, 2009 | 177 | 2009 |
| Silicon carbide electronic materials and devices MA Capano, RJ Trew MRS bulletin 22 (3), 19-23, 1997 | 174 | 1997 |
| Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE LW Yin, Y Hwang, JH Lee, RM Kolbas, RJ Trew, UK Mishra IEEE electron device letters 11 (12), 561-563, 1990 | 147 | 1990 |
| A large-signal, analytic model for the GaAs MESFET MA Khatibzadeh, RJ Trew IEEE Transactions on Microwave Theory and Techniques 36 (2), 231-238, 1988 | 141 | 1988 |
| Wide bandgap semiconductor transistors for microwave power amplifiers RJ Trew IEEE Microwave magazine 1 (1), 46-54, 2000 | 140 | 2000 |
| High-frequency solid-state electronic devices RJ Trew IEEE transactions on electron devices 52 (5), 638-649, 2005 | 137 | 2005 |
| Microwave AlGaN/GaN HFETs RJ Trew, GL Bilbro, W Kuang, Y Liu, H Yin IEEE Microwave Magazine 6 (1), 56-66, 2005 | 131 | 2005 |
| High power applications for GaN-based devices RJ Trew, MW Shin, V Gatto Solid-State Electronics 41 (10), 1561-1567, 1997 | 122 | 1997 |
| Gate breakdown in MESFETs and HEMTs RJ Trew, UK Mishra IEEE Electron Device Letters 12 (10), 524-526, 1991 | 111 | 1991 |
| Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs RJ Trew, Y Liu, L Bilbro, W Kuang, R Vetury, JB Shealy IEEE Transactions on Microwave Theory and Techniques 54 (5), 2061-2067, 2006 | 103 | 2006 |
| RF and microwave circuits, measurements, and modeling M Golio, R Trew, J Golio, M Steer, LP Dunleavy, C Nelson, R Newgard, ... CRC press, 2018 | 93 | 2018 |
| Yield optimization using a GaAs process simulator coupled to a physical device model DE Stoneking, GL Bilbro, PA Gilmore, RJ Trew, CT Kelley IEEE Transactions on Microwave Theory and Techniques 40 (7), 1353-1363, 1992 | 82 | 1992 |
| Microwave solid-state active devices GI Haddad, RJ Trew IEEE Transactions on Microwave Theory and Techniques 50 (3), 760-779, 2002 | 76 | 2002 |
| Experimental and simulated results of SiC microwave power MESFETs RJ Trew physica status solidi (a) 162 (1), 409-419, 1997 | 76 | 1997 |
| Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC E Bellotti, HE Nilsson, KF Brennan, PP Ruden, R Trew Journal of Applied Physics 87 (8), 3864-3871, 2000 | 75 | 2000 |
| Method and apparatus for transmitting stored data and engineering conditions of a tire to a remote location JD Rensel, RJ Trew, PB Wilson US Patent 5,977,870, 1999 | 72 | 1999 |
| GaN MESFETs for high-power and high-temperature microwave applications MW Shin, RJ Trew Electronics Letters 31 (6), 498-500, 1995 | 69 | 1995 |
| Hydrodynamic electron-transport model: Nonparabolic corrections to the streaming terms DL Woolard, H Tian, RJ Trew, MA Littlejohn, KW Kim Physical Review B 44 (20), 11119, 1991 | 67 | 1991 |
