| Mobility enhancement by Sb-mediated minimisation of stacking fault density in InAs nanowires grown on silicon MJL Sourribes, I Isakov, M Panfilova, H Liu, PA Warburton Nano letters 14 (3), 1643-1650, 2014 | 99 | 2014 |
| Exploring the Leidenfrost Effect for the Deposition of High‐Quality In2O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron … I Isakov, H Faber, M Grell, G Wyatt‐Moon, N Pliatsikas, T Kehagias, ... Advanced Functional Materials 27 (22), 1606407, 2017 | 60 | 2017 |
| Minimization of the contact resistance between InAs nanowires and metallic contacts MJL Sourribes, I Isakov, M Panfilova, PA Warburton Nanotechnology 24 (4), 045703, 2013 | 49 | 2013 |
| Rapid laser-induced photochemical conversion of sol–gel precursors to In 2 O 3 layers and their application in thin-film transistors S Dellis, I Isakov, N Kalfagiannis, K Tetzner, TD Anthopoulos, ... Journal of Materials Chemistry C 5 (15), 3673-3677, 2017 | 44 | 2017 |
| The impact of post-deposition annealing on the performance of solution-processed single layer In 2 O 3 and isotype In 2 O 3/ZnO heterojunction transistors K Tetzner, I Isakov, A Regoutz, DJ Payne, TD Anthopoulos Journal of Materials Chemistry C 5 (1), 59-64, 2017 | 40 | 2017 |
| Growth of ZnO and ZnMgO nanowires by Au‐catalysed molecular‐beam epitaxy I Isakov, M Panfilova, MJL Sourribes, PA Warburton physica status solidi (c) 10 (10), 1308-1313, 2013 | 33 | 2013 |
| Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs I Isakov, AF Paterson, O Solomeshch, N Tessler, Q Zhang, J Li, X Zhang, ... Applied Physics Letters 109 (26), 2016 | 26 | 2016 |
| Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In2O3 Transistors I Isakov, H Faber, AD Mottram, S Das, M Grell, A Regoutz, R Kilmurray, ... Advanced Electronic Materials 6 (11), 2000682, 2020 | 18 | 2020 |
| Voltage controlled modification of flux closure domains in planar magnetic structures for microwave applications DE Parkes, R Beardsley, S Bowe, I Isakov, PA Warburton, KW Edmonds, ... Applied Physics Letters 105 (6), 2014 | 18 | 2014 |
| Electrical levels of dislocation networks in p-and n-type Si I Isakov, A Bondarenko, O Vyvenko, V Vdovin, E Ubyivovk, O Kononchuk Journal of Physics: Conference Series 281 (1), 012010, 2011 | 17 | 2011 |
| InAs1− xPx nanowires grown by catalyst-free molecular-beam epitaxy I Isakov, M Panfilova, MJL Sourribes, V Tileli, AE Porter, PA Warburton Nanotechnology 24 (8), 085707, 2013 | 16 | 2013 |
| Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization AD Mottram, P Pattanasattayavong, I Isakov, G Wyatt-Moon, H Faber, ... AIP Advances 8 (6), 2018 | 13 | 2018 |
| Dislocation structure, electrical and luminescent properties of hydrophilically bonded silicon wafer interface A Bondarenko, O Vyvenko, I Kolevatov, I Isakov, O Kononchuk Solid State Phenomena 178, 233-242, 2011 | 13 | 2011 |
| Current-mode deep level transient spectroscopy of a semiconductor nanowire field-effect transistor I Isakov, MJL Sourribes, PA Warburton Journal of Applied Physics 122 (9), 2017 | 5 | 2017 |
| Electron levels and luminescence of dislocation networks formed by the hydrophilic bonding of silicon wafers AS Bondarenko, OF Vyvenko, IA Isakov Semiconductors 47, 259-263, 2013 | 5 | 2013 |
| Correlation between cathodoluminescent and electrical properties of dislocation network in the space charge region of Schottky‐diode A Bondarenko, O Vyvenko, I Isakov, O Kononchuk physica status solidi c 8 (4), 1273-1277, 2011 | 5 | 2011 |
| Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19 RP Beardsley, DE Parkes, J Zemen, S Bowe, KW Edmonds, C Reardon, ... Scientific Reports 7 (1), 42107, 2017 | 4 | 2017 |
| Identification of dislocation-related luminescence participating levels in silicon by DLTS and Pulsed-CL profiling A Bondarenko, O Vyvenko, I Isakov Journal of Physics: Conference Series 281 (1), 012008, 2011 | 4 | 2011 |
| Observation of coherent electron transport in self-catalysed InAs and InAs1–xSbx nanowires grown on silicon MJL Sourribes, I Isakov, M Panfilova, PA Warburton Journal of Applied Physics 121 (2), 2017 | 2 | 2017 |
| Semiconductor nanowires grown by molecular beam epitaxy for electronics applications I Isakov UCL (University College London), 2015 | 2 | 2015 |
