Alessandro Rossi
Alessandro Rossi
UKRI Future Leaders Fellow, University of Strathclyde, Glasgow
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Zitiert von
Zitiert von
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
CH Yang, A Rossi, R Ruskov, NS Lai, FA Mohiyaddin, S Lee, C Tahan, ...
Nature Communications 4, 2069, 2013
Gate-based single-shot readout of spins in silicon
A West, B Hensen, A Jouan, T Tanttu, CH Yang, A Rossi, ...
Nature nanotechnology 14 (5), 437-441, 2019
An accurate single-electron pump based on a highly tunable silicon quantum dot
A Rossi, T Tanttu, KY Tan, I Iisakka, R Zhao, KW Chan, GC Tettamanzi, ...
Nano Letters 14 (6), 3405-3411, 2014
Radio-frequency capacitive gate-based sensing
I Ahmed, JA Haigh, S Schaal, S Barraud, Y Zhu, C Lee, M Amado, ...
Physical Review Applied 10 (1), 014018, 2018
Valley splitting of single-electron Si MOS quantum dots
JK Gamble, P Harvey-Collard, NT Jacobson, AD Baczewski, E Nielsen, ...
Applied Physics Letters 109 (25), 2016
A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
S Schaal, A Rossi, VN Ciriano-Tejel, TY Yang, S Barraud, JJL Morton, ...
Nature Electronics 2 (6), 236-242, 2019
Orbital and valley state spectra of a few-electron silicon quantum dot
CH Yang, WH Lim, NS Lai, A Rossi, A Morello, AS Dzurak
Physical Review B 86 (11), 115319, 2012
Thermal-error regime in high-accuracy gigahertz single-electron pumping
R Zhao, A Rossi, SP Giblin, JD Fletcher, FE Hudson, M Möttönen, ...
Physical Review Applied 8 (4), 044021, 2017
Evidence for universality of tunable-barrier electron pumps
SP Giblin, A Fujiwara, G Yamahata, MH Bae, N Kim, A Rossi, M Möttönen, ...
Metrologia 56 (4), 044004, 2019
Charge state hysteresis in semiconductor quantum dots
CH Yang, A Rossi, NS Lai, R Leon, WH Lim, AS Dzurak
Applied Physics Letters 105 (18), 2014
Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
A Rossi, R Zhao, AS Dzurak, MF Gonzalez-Zalba
Applied Physics Letters 110 (21), 2017
Silicon metal-oxide-semiconductor quantum dots for single-electron pumping
A Rossi, T Tanttu, FE Hudson, Y Sun, M Möttönen, AS Dzurak
JoVE (Journal of Visualized Experiments), e52852, 2015
Electron temperature in electrically isolated Si double quantum dots
A Rossi, T Ferrus, DA Williams
Applied Physics Letters 100 (13), 2012
Electron counting in a silicon single-electron pump
T Tanttu, A Rossi, KY Tan, KE Huhtinen, KW Chan, M Möttönen, ...
New Journal of Physics 17 (10), 103030, 2015
Coulomb interaction and valley-orbit coupling in Si quantum dots
L Jiang, CH Yang, Z Pan, A Rossi, AS Dzurak, D Culcer
Physical Review B 88 (8), 085311, 2013
Detection of charge motion in a non-metallic silicon isolated double quantum dot
T Ferrus, A Rossi, M Tanner, G Podd, P Chapman, DA Williams
New Journal of Physics 13 (10), 103012, 2011
Three-waveform bidirectional pumping of single electrons with a silicon quantum dot
T Tanttu, A Rossi, KY Tan, A Mäkinen, KW Chan, AS Dzurak, M Möttönen
Scientific reports 6 (1), 36381, 2016
Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector
M Jenei, E Potanina, R Zhao, KY Tan, A Rossi, T Tanttu, KW Chan, ...
Physical Review Research 1 (3), 033163, 2019
Charge detection in phosphorus-doped silicon double quantum dots
A Rossi, T Ferrus, GJ Podd, DA Williams
Applied Physics Letters 97 (22), 2010
Microwave-assisted transport via localized states in degenerately doped Si single electron transistors
A Rossi, DG Hasko
Journal of Applied Physics 108 (3), 2010
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