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Vladislav Bougrov
Vladislav Bougrov
Innolume GmbH
Bestätigte E-Mail-Adresse bei innolume.com
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Zitiert von
Zitiert von
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Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe
V Bougrov, ME Levinshtein, SL Rumyantsev, A Zubrilov, MS Shur
Eds. Levinshtein ME, Rumyantsev SL, Shur MS, John Wiley & Sons, Inc., New …, 2001
8072001
Gallium OXIDE: Properties and applica 498 a review
S Stepanov, V Nikolaev, V Bougrov, A Romanov
Rev. Adv. Mater. Sci 44, 63-86, 2016
7952016
Epitaxial growth of (2 01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy
VI Nikolaev, AI Pechnikov, SI Stepanov, IP Nikitina, AN Smirnov, ...
Materials Science in Semiconductor Processing 47, 16-19, 2016
662016
Growth and characterization of β-Ga2O3 crystals
VI Nikolaev, V Maslov, SI Stepanov, AI Pechnikov, V Krymov, IP Nikitina, ...
Journal of Crystal Growth 457, 132-136, 2017
622017
Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
S Suihkonen, T Lang, O Svensk, J Sormunen, PT Törmä, M Sopanen, ...
Journal of crystal growth 300 (2), 324-329, 2007
482007
Gallium Nitride (GaN)
V Bougrov, M Levinshtein, S Rumyantsev, A Zubrilov
Properties of Advanced Semiconductor Materials, GaN, AlN, InN, BN, SiC, SiGe, 2001
462001
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
PT Törmä, O Svensk, M Ali, S Suihkonen, M Sopanen, MA Odnoblyudov, ...
Journal of Crystal Growth 310 (23), 5162-5165, 2008
452008
Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
S Stepanov, WN Wang, BS Yavich, V Bougrov, YT Rebane, YG Shreter
Materials Research Society Internet Journal of Nitride Semiconductor …, 2001
402001
Light emitting diode with charge asymmetric resonance tunneling
YT Rebane, YG Shreter, BS Yavich, VE Bougrov, SI Stepanov, WN Wang
physica status solidi (a) 180 (1), 121-126, 2000
392000
Effect of growth conditions on electrical properties of Mg-doped p-GaN
O Svensk, S Suihkonen, T Lang, H Lipsanen, M Sopanen, ...
Journal of crystal growth 298, 811-814, 2007
362007
Non-equilibrium grain boundaries with excess energy in graphene
AE Romanov, AL Kolesnikova, TS Orlova, I Hussainova, VE Bougrov, ...
Carbon 81, 223-231, 2015
332015
Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer
O Svensk, PT Törmä, S Suihkonen, M Ali, H Lipsanen, M Sopanen, ...
Journal of Crystal Growth 310 (23), 5154-5157, 2008
322008
Optical confinement and threshold currents in III–V nitride heterostructures: Simulation
VE Bougrov, AS Zubrilov
Journal of applied physics 81 (7), 2952-2956, 1997
321997
Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers
T Lang, MA Odnoblyudov, VE Bougrov, AE Romanov, S Suihkonen, ...
physica status solidi (a) 203 (10), R76-R78, 2006
312006
The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
S Suihkonen, O Svensk, T Lang, H Lipsanen, MA Odnoblyudov, ...
Journal of crystal growth 298, 740-743, 2007
292007
Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique
T Lang, M Odnoblyudov, V Bougrov, S Suihkonen, M Sopanen, ...
Journal of crystal growth 292 (1), 26-32, 2006
292006
Threading dislocation density reduction in two‐stage growth of GaN layers
VE Bougrov, MA Odnoblyudov, AE Romanov, T Lang, OV Konstantinov
physica status solidi (a) 203 (4), R25-R27, 2006
282006
High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range
AV Babichev, VV Dudelev, AG Gladyshev, DA Mikhailov, AS Kurochkin, ...
Technical Physics Letters 45, 735-738, 2019
272019
Degradation and transient currents in III-nitride LEDs
YT Rebane, NI Bochkareva, VE Bougrov, DV Tarkhin, YG Shreter, ...
Light-Emitting Diodes: Research, Manufacturing, and Applications VII 4996 …, 2003
272003
3D laser nano-printing on fibre paves the way for super-focusing of multimode laser radiation
GS Sokolovskii, V Melissinaki, KA Fedorova, VV Dudelev, SN Losev, ...
Scientific Reports 8 (1), 14618, 2018
262018
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