| Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature S Suzuki, M Asada, A Teranishi, H Sugiyama, H Yokoyama Applied Physics Letters 97 (24), 2010 | 393 | 2010 |
| 300-GHz. 100-Gb/s InP-HEMT wireless transceiver using a 300-GHz fundamental mixer H Hamada, T Fujimura, I Abdo, K Okada, HJ Song, H Sugiyama, ... 2018 IEEE/MTT-S International Microwave Symposium-IMS, 1480-1483, 2018 | 121 | 2018 |
| 300-GHz-band 120-Gb/s wireless front-end based on InP-HEMT PAs and mixers H Hamada, T Tsutsumi, H Matsuzaki, T Fujimura, I Abdo, A Shirane, ... IEEE Journal of Solid-State Circuits 55 (9), 2316-2335, 2020 | 112 | 2020 |
| Fundamental oscillation of up to 831 GHz in GaInAs/AlAs resonant tunneling diode S Suzuki, A Teranishi, K Hinata, M Asada, H Sugiyama, H Yokoyama Applied Physics Express 2 (5), 054501, 2009 | 101 | 2009 |
| High output power (∼ 400 µW) oscillators at around 550 GHz using resonant tunneling diodes with graded emitter and thin barriers M Shiraishi, H Shibayama, K Ishigaki, S Suzuki, M Asada, H Sugiyama, ... Applied physics express 4 (6), 064101, 2011 | 49 | 2011 |
| Light emission from surfaces, thin films and particles induced by high‐energy electron beam N Yamamoto, K Araya, A Toda, H Sugiyama Surface and Interface Analysis: An International Journal devoted to the …, 2001 | 48 | 2001 |
| Cherenkov and transition radiation from thin plate crystals detected in the transmission electron microscope N Yamamoto, H Sugiyama, A Toda Proceedings of the Royal Society of London. Series A: Mathematical, Physical …, 1996 | 48 | 1996 |
| Lg= 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz HB Jo, DY Yun, JM Baek, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... Applied Physics Express 12 (5), 054006, 2019 | 45 | 2019 |
| nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and of 559 GHz HB Jo, JM Baek, DY Yun, SW Son, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... IEEE Electron Device Letters 39 (11), 1640-1643, 2018 | 38 | 2018 |
| Sub-terahertz resonant tunneling diode oscillators with high output power (∼ 200 µW) using offset-fed slot antenna and high current density K Hinata, M Shiraishi, S Suzuki, M Asada, H Sugiyama, H Yokoyama Applied physics express 3 (1), 014001, 2009 | 37 | 2009 |
| Sub-terahertz resonant tunneling diode oscillators integrated with tapered slot antennas for horizontal radiation K Urayama, S Aoki, S Suzuki, M Asada, H Sugiyama, H Yokoyama Applied physics express 2 (4), 044501, 2009 | 35 | 2009 |
| 300-GHz 120-Gb/s wireless transceiver with high-output-power and high-gain power amplifier based on 80-nm InP-HEMT technology H Hamada, T Tsutsumi, G Itami, H Sugiyama, H Matsuzaki, K Okada, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 33 | 2019 |
| Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz HB Jo, SW Yun, JG Kim, DY Yun, IG Lee, DH Kim, TW Kim, SK Kim, J Yun, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.4. 1-8.4. 4, 2020 | 30 | 2020 |
| Impact of the source-to-drain spacing on the DC and RF characteristics of InGaAs/InAlAs high-electron mobility transistors DY Yun, HB Jo, SW Son, JM Baek, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... IEEE Electron Device Letters 39 (12), 1844-1847, 2018 | 30 | 2018 |
| Metal-organic vapor-phase epitaxy growth of InP-based resonant tunneling diodes with a strained In0. 8Ga0. 2As well and AlAs barriers H Sugiyama, H Matsuzaki, Y Oda, H Yokoyama, T Enoki, T Kobayashi Japanese journal of applied physics 44 (10R), 7314, 2005 | 26 | 2005 |
| Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors T Gotow, M Mitsuhara, T Hoshi, H Sugiyama, M Takenaka, S Takagi Journal of Applied Physics 122 (17), 2017 | 23 | 2017 |
| Fundamental oscillation up to 1.08 THz in resonant tunneling diodes with high indium composition transit layers A Teranishi, K Shizuno, S Suzuki, M Asada, H Sugiyama, H Yokoyama IPRM 2011-23rd International Conference on Indium Phosphide and Related …, 2011 | 23 | 2011 |
| Extremely high peak current densities of over 1× 106 A/cm2 in InP-based InGaAs/AlAs resonant tunneling diodes grown by metal–organic vapor-phase epitaxy H Sugiyama, H Yokoyama, A Teranishi, S Suzuki, M Asada Japanese Journal of Applied Physics 49 (5R), 051201, 2010 | 23 | 2010 |
| Millimeter-wave InP device technologies for ultra-high speed wireless communications toward beyond 5G H Hamada, T Tsutsumi, H Sugiyama, H Matsuzaki, HJ Song, G Itami, ... 2019 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2019 | 22 | 2019 |
| Terahertz MMICs and antenna-in-package technology at 300 GHz for KIOSK download system T Tajima, T Kosugi, HJ Song, H Hamada, A El Moutaouakil, H Sugiyama, ... Journal of Infrared, Millimeter, and Terahertz Waves 37, 1213-1224, 2016 | 20 | 2016 |
