| Radiofrequency identification of wireless devices based on RF fingerprinting P Padilla, JL Padilla, JF Valenzuela‐Valdés Electronics letters 49 (22), 1409-1410, 2013 | 54 | 2013 |
| Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor JL Padilla, C Alper, F Gámiz, AM Ionescu Applied Physics Letters 105 (8), 2014 | 48 | 2014 |
| Impact of quantum confinement on gate threshold voltage and subthreshold swings in double-gate tunnel FETs JL Padilla, F Gamiz, A Godoy IEEE transactions on electron devices 59 (12), 3205-3211, 2012 | 48 | 2012 |
| A little Higgs model of neutrino masses F Del Aguila, M Masip, JL Padilla Physics Letters B 627 (1-4), 131-136, 2005 | 44 | 2005 |
| A simple approach to quantum confinement in tunneling field-effect transistors JL Padilla, F Gamiz, A Godoy IEEE electron device letters 33 (10), 1342-1344, 2012 | 43 | 2012 |
| RF fingerprint measurements for the identification of devices in wireless communication networks based on feature reduction and subspace transformation JL Padilla, P Padilla, JF Valenzuela-Valdés, J Ramírez, JM Górriz Measurement 58, 468-475, 2014 | 36 | 2014 |
| Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement JL Padilla, C Alper, A Godoy, F Gámiz, AM Ionescu IEEE Transactions on Electron Devices 62 (11), 2015 | 33 | 2015 |
| Simulation of fabricated 20-nm Schottky barrier MOSFETs on SOI: Impact of barrier lowering JL Padilla, L Knoll, F Gamiz, QT Zhao, A Godoy, S Mantl IEEE transactions on electron devices 59 (5), 1320-1327, 2012 | 33 | 2012 |
| An embedded lightweight folded printed quadrifilar helix antenna: UAV telemetry and remote control systems JMF González, P Padilla, JF Valenzuela-Valdes, JL Padilla, ... IEEE Antennas and Propagation Magazine 59 (3), 69-76, 2017 | 30 | 2017 |
| Human neuro-activity for securing body area networks: Application of brain-computer interfaces to people-centric Internet of Things JF Valenzuela-Valdes, MA Lopez, P Padilla, JL Padilla, J Minguillon IEEE Communications Magazine 55 (2), 62-67, 2017 | 28 | 2017 |
| Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling field-effect transistor JL Padilla, C Medina-Bailon, C Alper, F Gamiz, AM Ionescu Applied Physics Letters 112 (18), 2018 | 25 | 2018 |
| The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization C Alper, P Palestri, JL Padilla, AM Ionescu IEEE Transactions on Electron Devices 63 (6), 2603 - 2609, 2016 | 24 | 2016 |
| Electronically reconfigurable reflective phase shifter for circularly polarized reflectarray systems P Padilla, JF Valenzuela-Valdés, JL Padilla, JM Fernández-González, ... IEEE Microwave and Wireless Components Letters 26 (9), 705-707, 2016 | 22 | 2016 |
| Two dimensional quantum mechanical simulation of low dimensional tunneling devices C Alper, P Palestri, L Lattanzio, JL Padilla, AM Ionescu Solid-State Electronics 113, 167-172, 2015 | 20 | 2015 |
| Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor JL Padilla, C Alper, C Medina-Bailón, F Gámiz, AM Ionescu Applied Physics Letters 106 (26), 2015 | 16 | 2015 |
| The effect of quantum confinement on tunneling field-effect transistors with high-κ gate dielectric JL Padilla, F Gámiz, A Godoy Applied Physics Letters 103 (11), 2013 | 16 | 2013 |
| Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET C Alper, P Palestri, JL Padilla, AM Ionescu Semiconductor Science and Technology 31 (4), 045001, 2016 | 15 | 2016 |
| MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections C Medina-Bailon, C Sampedro, JL Padilla, A Godoy, L Donetti, F Gamiz, ... 2018 Joint International EUROSOI Workshop and International Conference on …, 2018 | 13 | 2018 |
| A novel reconfigurable sub-0.25-V digital logic family using the electron-hole bilayer TFET C Alper, JL Padilla, P Palestri, AM Ionescu IEEE Journal of the Electron Devices Society 6, 2-7, 2017 | 12 | 2017 |
| Gate leakage tunneling impact on the InAs/GaSb heterojunction electron–Hole Bilayer tunneling field-effect transistor JL Padilla, C Medina-Bailon, C Marquez, C Sampedro, L Donetti, F Gamiz, ... IEEE Transactions on Electron Devices 65 (10), 4679-4686, 2018 | 11 | 2018 |
Francisco GamizProfessor of ElectronicsBestätigte E-Mail-Adresse bei ugr.es
