Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering FL Martínez, M Toledano-Luque, JJ Gandía, J Cárabe, W Bohne, ...
Journal of Physics D: Applied Physics 40 (17), 5256, 2007
231 2007 Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material E Antolín, A Martí, J Olea, D Pastor, G González-Díaz, I Mártil, A Luque
Applied Physics Letters 94 (4), 2009
171 2009 Optical-constant calculation of non-uniform thickness thin films of the Ge10As15Se75 chalcogenide glassy alloy in the sub-band-gap region (0.1–1.8 eV) E Marquez, AM Bernal-Oliva, JM Gonzalez-Leal, R Prieto-Alcon, ...
Materials chemistry and physics 60 (3), 231-239, 1999
104 1999 Titanium doped silicon layers with very high concentration J Olea, M Toledano-Luque, D Pastor, G González-Díaz, I Mártil
Journal of Applied Physics 104 (1), 2008
103 2008 A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition S Duenas, H Castán, H García, E San Andrés, M Toledano-Luque, I Mártil, ...
Semiconductor science and technology 20 (10), 1044, 2005
102 2005 Rapid thermal annealing effects on the structural properties and density of defects in E San Andrés, A Del Prado, FL Martınez, I Mártil, D Bravo, FJ López
Journal of Applied Physics 87 (3), 1187-1192, 2000
102 2000 Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III–V nitrides I Martil, E Redondo, A Ojeda
Journal of applied physics 81 (5), 2442-2444, 1997
101 1997 Capacitance measurements of pn junctions: depletion layer and diffusion capacitance contributions ML Lucia, JL Hernandez-Rojas, C Leon, I Mártil
European journal of physics 14 (2), 86, 1993
86 1993 Sub-bandgap absorption in Ti implanted Si over the Mott limit J Olea, A Del Prado, D Pastor, I Mártil, G González-Díaz
Journal of Applied Physics 109 (11), 2011
78 2011 High quality Ti-implanted Si layers above the Mott limit J Olea, M Toledano-Luque, D Pastor, E San-Andrés, I Mártil, ...
Journal of Applied Physics 107 (10), 2010
72 2010 Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector E García Hemme, R García Hernansanz, G González Díaz, J Olea Ariza, ...
American Institute of Physics, 2014
66 2014 Deposition of S Garcia, I Martil, G Gonzalez Diaz, E Castan, S Duenas, M Fernandez
Journal of Applied Physics 83 (1), 332-338, 1998
65 1998 Physical properties of high pressure reactively sputtered TiO2 ES Andrés, M Toledano-Luque, A Prado, MA Navacerrada, I Mártil, ...
Journal of Vacuum Science & Technology A 23 (6), 1523-1530, 2005
64 2005 Optical analysis of absorbing thin films: application to ternary chalcopyrite semiconductors JL Hernandez-Rojas, ML Lucia, I Mártil, G González-Díaz, J Santamaria, ...
Applied optics 31 (10), 1606-1611, 1992
64 1992 Intermediate band mobility in heavily titanium-doped silicon layers G González Díaz, J Olea Ariza
Elsevier Science BV, 2009
63 2009 Two-layer Hall effect model for intermediate band Ti-implanted silicon J Olea, G González-Díaz, D Pastor, I Mártil, A Martí, E Antolín, A Luque
Journal of Applied Physics 109 (6), 2011
59 2011 Influence of rapid thermal annealing processes on the properties of SiNx: H films deposited by the electron cyclotron resonance method FL Martınez, I Mártil, G González-Dıaz, B Selle, I Sieber
Journal of non-crystalline solids 227, 523-527, 1998
59 1998 Isotopic study of the nitrogen-related modes in N+-implanted ZnO L Artús, R Cuscó, E Alarcón-Lladó, G Gonzalez-Diaz, I Mártil, J Jiménez, ...
Applied physics letters 90 (18), 2007
58 2007 Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance A Del Prado, E San Andrés, FL Martınez, I Mártil, G González-Dı́az, ...
Vacuum 67 (3-4), 507-512, 2002
58 2002 Molecular models and activation energies for bonding rearrangement in plasma-deposited FL Martinez, A Del Prado, I Mártil, G González-Diaz, W Bohne, W Fuhs, ...
Physical Review B 63 (24), 245320, 2001
57 2001 
Felix L. Martinez-VivienteUniversidad Politecnica de CartagenaBestätigte E-Mail-Adresse bei upct.es
