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Applied Physics Letters 69 (1), 73-75, 1996
527 1996 Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ...
Applied physics letters 67 (15), 2188-2190, 1995
275 1995 Thermal conductivity of GaN crystals in 4.2–300 K range A Jeżowski, BA Danilchenko, M Boćkowski, I Grzegory, S Krukowski, ...
Solid state communications 128 (2-3), 69-73, 2003
192 2003 III–V Nitrides—thermodynamics and crystal growth at high N2 pressure I Grzegory, J Jun, M Boćkowski, M Wroblewski, B Łucznik, S Porowski
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Solid state communications 97 (11), 919-922, 1996
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Journal of Physics and Chemistry of Solids 59 (3), 289-295, 1998
138 1998 Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds M Bockowski, M Iwinska, M Amilusik, M Fijalkowski, B Lucznik, T Sochacki
Semiconductor Science and Technology 31 (9), 093002, 2016
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Journal of Physics D: Applied Physics 28 (4A), A149, 1995
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Chemistry of Materials 29 (14), 5865-5876, 2017
109 2017 Optical and magnetic properties of Mn in bulk GaN A Wolos, M Palczewska, M Zajac, J Gosk, M Kaminska, A Twardowski, ...
Physical Review B 69 (11), 115210, 2004
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Journal of electronic materials 25, 1545-1550, 1996
105 1996 Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing H Sakurai, M Omori, S Yamada, Y Furukawa, H Suzuki, T Narita, ...
Applied Physics Letters 115 (14), 142104, 2019
95 2019 Structure and mechanical properties of compressed sodium aluminosilicate glasses: Role of non-bridging oxygens TK Bechgaard, A Goel, RE Youngman, JC Mauro, SJ Rzoska, ...
Journal of Non-Crystalline Solids 441, 49-57, 2016
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Physical Review B 81 (8), 085209, 2010
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Applied Physics Letters 86 (10), 102106, 2005
91 2005 Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates B Łucznik, B Pastuszka, I Grzegory, M Boćkowski, G Kamler, ...
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89 2005 High pressure phase transition in aluminium nitride I Gorczyca, NE Christensen, P Perlin, I Grzegory, J Jun, M Bockowski
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85 1991 The microstructure of gallium nitride monocrystals grown at high pressure M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ...
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82 1996 Method of fabrication of highly resistive GaN bulk crystals S Porowski, M Bockowski, I Grzegory, S Krukowski, M Leszczynski, ...
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81 2001 