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Alison A. Baski
Alison A. Baski
Verified email at cpp.edu
Title
Cited by
Cited by
Year
Growth of self-assembled n-alkyltrichlorosilane films on Si (100) investigated by atomic force microscopy
K Bierbaum, M Grunze, AA Baski, LF Chi, W Schrepp, H Fuchs
Langmuir 11 (6), 2143-2150, 1995
3051995
The structure of silicon surfaces from (001) to (111)
AA Baski, SC Erwin, LJ Whitman
Surface Science 392 (1-3), 69-85, 1997
2651997
Aluminum on the Si (100) surface: Growth of the first monolayer
J Nogami, AA Baski, CF Quate
Physical Review B 44 (3), 1415, 1991
2251991
The origin of the superstructure in Bi2Sr2CaCu2O8+ δ as revealed by scanning tunneling microscopy
MD Kirk, J Nogami, AA Baski, DB Mitzi, A Kapitulnik, TH Geballe, ...
Science 242 (4886), 1673-1675, 1988
2151988
Highly efficient electron field emission from graphene oxide sheets supported by nickel nanotip arrays
D Ye, S Moussa, JD Ferguson, AA Baski, MS El-Shall
Nano letters 12 (3), 1265-1268, 2012
1682012
A stable high-index surface of silicon: Si (5 5 12)
AA Baski, LJ Whitman, SC Erwin
Science 269 (5230), 1556-1560, 1995
1651995
Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si (001) 2× 1-Sb
M Richter, JC Woicik, J Nogami, P Pianetta, KE Miyano, AA Baski, ...
Physical review letters 65 (27), 3417, 1990
1651990
√ 3×√ 3→ 6× 6 phase transition on the Au/Si (111) surface
J Nogami, AA Baski, CF Quate
Physical Review Letters 65 (13), 1611, 1990
1431990
Indium-induced reconstructions of the Si (100) surface
AA Baski, J Nogami, CF Quate
Physical Review B 43 (11), 9316, 1991
1341991
Epitaxial growth of silver on mica as studied by AFM and STM
AA Baski, H Fuchs
Surface Science 313 (3), 275-288, 1994
1321994
Surface photovoltage in undoped n-type GaN
MA Reshchikov, M Foussekis, AA Baski
Journal of Applied Physics 107 (11), 2010
1282010
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
D Huang, P Visconti, KM Jones, MA Reshchikov, F Yun, AA Baski, T King, ...
Applied Physics Letters 78 (26), 4145-4147, 2001
1192001
Structure of the Sb-terminated Si (100) surface
J Nogami, AA Baski, CF Quate
114*
Epitaxial lateral overgrowth of (112 2) semipolar GaN on (11 00) m-plane sapphire by metalorganic chemical vapor deposition
X Ni, Ü Özgür, AA Baski, H Morkoç, L Zhou, DJ Smith, CA Tran
Applied physics letters 90 (18), 2007
1132007
Quasiperiodic nanoscale faceting of high-index Si surfaces
AA Baski, LJ Whitman
Physical review letters 74 (6), 956, 1995
1131995
Structure and Stability of
SC Erwin, AA Baski, LJ Whitman
Physical review letters 77 (4), 687, 1996
1031996
Gallium growth and reconstruction on the Si (100) surface
AA Baski, J Nogami, CF Quate
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (1 …, 1990
1031990
Si (111)-5× 1-Au reconstruction as studied by scanning tunneling microscopy
AA Baski, J Nogami, CF Quate
Physical Review B 41 (14), 10247, 1990
1021990
Tin-induced reconstructions of the Si (100) surface
AA Baski, CF Quate, J Nogami
Physical Review B 44 (20), 11167, 1991
951991
1-D nanostructures grown on the Si (5 5 12) surface
AA Baski, KM Saoud, KM Jones
Applied surface science 182 (3-4), 216-222, 2001
932001
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