| Circuit-based electrothermal modeling of SiC power modules with nonlinear thermal models S Race, A Philipp, M Nagel, T Ziemann, I Kovacevic-Badstuebner, ... IEEE transactions on power electronics 37 (7), 7965-7976, 2022 | 23 | 2022 |
| Thermal resistance advanced calculator (TRAC) L Codecasa, S Race, V d'Alessandro, D Gualandris, A Morelli, CM Villa 2018 24rd International Workshop on Thermal Investigations of ICs and …, 2018 | 14 | 2018 |
| Design for reliability of SiC multichip power modules: The effect of variability S Race, T Ziemann, I Kovacevic-Badstuebner, R Stark, S Tiwari, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 11 | 2021 |
| Accuracy of thermal analysis for SiC power devices S Race, T Ziemann, S Tiwari, I Kovacevic-Badstuebner, U Grossner 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 11 | 2021 |
| TRAC: A thermal resistance advanced calculator for electronic packages L Codecasa, S Race, V d’Alessandro, D Gualandris, A Morelli, CM Villa Energies 12 (6), 1050, 2019 | 11 | 2019 |
| Thermal resistance and impedance calculator (TRIC) L Codecasa, F De Viti, S Race, V d’Alessandro, D Gualandris, A Morelli, ... 2019 25th International Workshop on Thermal Investigations of ICs and …, 2019 | 10 | 2019 |
| Power cycling reliability of SiC MOSFETs in discrete and module packages I Kovacevic-Badstuebner, S Race, T Ziemann, S Tiwari, U Grossner, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 10C. 3-1-10C. 3-6, 2022 | 6 | 2022 |
| Towards digital twins for the optimization of power electronic switching cells with discrete SiC power MOSFETs S Race, M Nagel, I Kovacevic-Badstuebner, T Ziemann, U Grossner PCIM Europe 2022; International Exhibition and Conference for Power …, 2022 | 5 | 2022 |
| High-energy proton and atmospheric-neutron irradiations of SiC power MOSFETs: SEB study and impact on channel and drift resistances C Martinella, S Race, R Stark, RG Alia, A Javanainen, U Grossner IEEE Transactions on Nuclear Science, 2023 | 4 | 2023 |
| Virtual PCB layout prototyping: Importance of modeling gate driver and parasitic capacitances M Nagel, S Race, I Kovacevic-Badstuebner, T Ziemann, U Grossner 2022 IEEE Design Methodologies Conference (DMC), 1-5, 2022 | 4 | 2022 |
| Modeling approach for design selection and reliability analysis of SiC power modules I Kovacevic-Badstuebner, S Race, U Grossner 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP), 1-5, 2022 | 3 | 2022 |
| Thermal analysis of SiC power semiconductor packages using the structure function S Race, I Kovacevic-Badstuebner, M Nagel, T Ziemann, S Tiwari, ... 2021 27th International Workshop on Thermal Investigations of ICs and …, 2021 | 3 | 2021 |
| Small-Signal Impedance and Split CV Characterization of High-κ SiC Power MOSFETs S Race, I Kovacevic-Badstubner, R Stark, A Tsibizov, M Belanche, ... Materials Science Forum 1091, 67-71, 2023 | 2 | 2023 |
| Extended analysis of power cycling behavior of TO-packaged SiC power MOSFETs I Kovacevic-Badstuebner, S Race, U Grossner, E Mengotti, C Kenel, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | 2 | 2023 |
| 3-D electrothermal modeling of SiC multichip power modules for a more accurate reliability assessment S Race, R Stark, I Kovacevic-Badstuebner, M Nagel, T Ziemann, ... CIPS 2022; 12th International Conference on Integrated Power Electronics …, 2022 | 2 | 2022 |
| Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses S Bonaldo, C Martinella, S Race, N Für, S Mattiazzo, M Bagatin, ... IEEE Transactions on Nuclear Science, 2024 | 1 | 2024 |
| Gate Impedance Analysis of SiC power MOSFETs with SiO2 and High-k Dielectric S Race, P Kumar, P Natzke, I Kovacevic-Badstuebner, ME Bathen, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 1 | 2023 |
| Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique C Dorfer, ME Bathen, S Race, P Kumar, A Tsibizov, J Woerle, U Grossner Applied Physics Letters 122 (18), 2023 | 1 | 2023 |
| Modeling of In-chip Current-Temperature Distribution of SiC Power MOSFETs during Fast Switching Events S Race, I Kovacevic-Badstuebner, R Stark, A Tsibizov, D Popescu, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 1 | 2022 |
| Heavy-ion effects in SiC power MOSFETs with trench-gate design C Martinella, S Race, N Für, HG De Medeiros, H Zhou, A Brandl, ... IEEE Transactions on Nuclear Science, 2024 | | 2024 |
