Egorov Anton Yurevich
Egorov Anton Yurevich
ITMO University, Connector Optics LLC
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Zitiert von
Zitiert von
Ultranarrow luminescence lines from single quantum dots
M Grundmann, J Christen, NN Ledentsov, J Böhrer, D Bimberg, ...
Physical Review Letters 74 (20), 4043, 1995
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
NN Ledentsov, VA Shchukin, M Grundmann, N Kirstaedter, J Böhrer, ...
Physical Review B 54 (12), 8743, 1996
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ...
Applied physics letters 74 (19), 2815-2817, 1999
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
N Kirstaedter, OG Schmidt, NN Ledentsov, D Bimberg, VM Ustinov, ...
Applied physics letters 69 (9), 1226-1228, 1996
Tamm plasmon polaritons: Slow and spatially compact light
ME Sasin, RP Seisyan, MA Kalitteevski, S Brand, RA Abram, ...
Applied physics letters 92 (25), 251112, 2008
Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots
R Heitz, M Grundmann, NN Ledentsov, L Eckey, M Veit, D Bimberg, ...
Applied Physics Letters 68 (3), 361-363, 1996
Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing
NN Ledentsov, M Grundmann, N Kirstaedter, O Schmidt, R Heitz, J Böhrer, ...
Solid-State Electronics 40 (1-8), 785-798, 1996
Structural characterization of (In, Ga) As quantum dots in a GaAs matrix
S Ruvimov, P Werner, K Scheerschmidt, U Gösele, J Heydenreich, ...
Physical Review B 51 (20), 14766, 1995
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
M Hetterich, MD Dawson, AY Egorov, D Bernklau, H Riechert
Applied Physics Letters 76 (8), 1030-1032, 2000
Monolithic VCSEL with InGaAsN active region emitting at 1.28 µm and CW output power exceeding 500µW at room temperature
G Steinle, H Riechert, AY Egorov
Electronics Letters 37 (2), 1, 2001
InAs–GaAs quantum pyramid lasers: in situ growth, radiative lifetimes and polarization properties
D Bimberg, NN Ledentsov, M Grundmann, N Kirstaedter, OG Schmidt, ...
Japanese journal of applied physics 35 (2S), 1311, 1996
Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing
AO Kosogov, P Werner, U Gösele, NN Ledentsov, D Bimberg, VM Ustinov, ...
Applied Physics Letters 69 (20), 3072-3074, 1996
8 W continuous wave operation of InGaAsN lasers at 1.3 µm
DA Livshits, AY Egorov, H Riechert
Electronics Letters 36 (16), 1381-1382, 2000
InAs/GaAs quantum dots radiative recombination from zero‐dimensional states
M Grundmann, NN Ledentsov, R Heitz, L Eckey, J Christen, J Böhrer, ...
physica status solidi (b) 188 (1), 249-258, 1995
Optical properties of heterostructures with InGaAs-GaAs quantum clusters
NN Ledentsov, VM Ustinov, AY Egorov, AE Zhukov, MV Maksimov, ...
Semiconductors 28 (8), 832-834, 1994
Vertical cavity lasers based on vertically coupled quantum dots
JA Lott, NN Ledentsov, VM Ustinov, AY Egorov, AE Zhukov, PS Kop'ev, ...
Electronics Letters 33 (13), 1150-1151, 1997
High power CW operation of InGaAsN lasers at 1.3 µm
AY Egorov, D Bernklau, D Livshits, V Ustinov, ZI Alferov, H Riechert
Electronics Letters 35 (19), 1643-1644, 1999
Recombination mechanisms in GaInNAs/GaAs multiple quantum wells
A Kaschner, T Lüttgert, H Born, A Hoffmann, AY Egorov, H Riechert
Applied Physics Letters 78 (10), 1391-1393, 2001
Prevention of gain saturation by multi-layer quantum dot lasers
OG Schmidt, N Kirstaedter, NN Ledentsov, MH Mao, D Bimberg, ...
Electronics Letters 32 (14), 1302-1304, 1996
Data transmission up to 10Gbit/s with 1.3 µm wavelength InGaAsN VCSELs
G Steinle, F Mederer, M Kicherer, R Michalzik, G Kristen, AY Egorov, ...
Electronics Letters 37 (10), 1, 2001
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