F. C-P. Massabuau
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Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
FCP Massabuau, SL Sahonta, L Trinh-Xuan, S Rhode, TJ Puchtler, ...
Applied Physics Letters 101 (21), 2012
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ...
Applied Physics Letters 107 (13), 2015
The effects of Si doping on dislocation movement and tensile stress in GaN films
MA Moram, MJ Kappers, F Massabuau, RA Oliver, CJ Humphreys
Journal of Applied Physics 109 (7), 2011
X-ray diffraction analysis of cubic zincblende III-nitrides
M Frentrup, LY Lee, SL Sahonta, MJ Kappers, F Massabuau, P Gupta, ...
Journal of Physics D: Applied Physics 50 (43), 433002, 2017
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
RA Oliver, FCP Massabuau, MJ Kappers, WA Phillips, EJ Thrush, ...
Applied Physics Letters 103 (14), 2013
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied Physics Letters 106 (7), 2015
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem
FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ...
Applied physics letters 105 (11), 2014
A peeling approach for integrated manufacturing of large monolayer h-BN crystals
R Wang, DG Purdie, Y Fan, FCP Massabuau, P Braeuninger-Weimer, ...
ACS nano 13 (2), 2114-2126, 2019
Carrier localization in the vicinity of dislocations in InGaN
F Massabuau, P Chen, MK Horton, SL Rhode, CX Ren, TJ O'Hanlon, ...
Journal of Applied Physics 121 (1), 2017
Thick, adherent diamond films on AlN with low thermal barrier resistance
S Mandal, C Yuan, F Massabuau, JW Pomeroy, J Cuenca, H Bland, ...
ACS applied materials & interfaces 11 (43), 40826-40834, 2019
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
JW Roberts, PR Chalker, B Ding, RA Oliver, JT Gibbon, LAH Jones, ...
Journal of Crystal Growth 528, 125254, 2019
Structure and strain relaxation effects of defects in InxGa1− xN epilayers
SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ...
Journal of Applied Physics 116 (10), 2014
Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN
EJW Smith, AH Piracha, D Field, JW Pomeroy, GR Mackenzie, Z Abdallah, ...
Carbon 167, 620-626, 2020
α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
JW Roberts, JC Jarman, DN Johnstone, PA Midgley, PR Chalker, ...
Journal of Crystal Growth 487, 23-27, 2018
Atomic layer deposited α-Ga2O3 solar-blind photodetectors
J Moloney, O Tesh, M Singh, JW Roberts, JC Jarman, LC Lee, TN Huq, ...
Journal of Physics D: Applied Physics 52 (47), 475101, 2019
Crystalline interlayers for reducing the effective thermal boundary resistance in GaN-on-diamond
DE Field, JA Cuenca, M Smith, SM Fairclough, FCP Massabuau, ...
ACS Applied Materials & Interfaces 12 (48), 54138-54145, 2020
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
FCP Massabuau, L Trinh-Xuan, D Lodié, EJ Thrush, D Zhu, F Oehler, ...
Journal of Applied Physics 113 (7), 2013
Dislocations in AlGaN: Core structure, atom segregation, and optical properties
FCP Massabuau, SL Rhode, MK Horton, TJ O’Hanlon, A Kovács, ...
Nano letters 17 (8), 4846-4852, 2017
Thermal stress modelling of diamond on GaN/III-Nitride membranes
JA Cuenca, MD Smith, DE Field, FCP Massabuau, S Mandal, J Pomeroy, ...
Carbon 174, 647-661, 2021
Integrated wafer scale growth of single crystal metal films and high quality graphene
OJ Burton, FCP Massabuau, VP Veigang-Radulescu, B Brennan, ...
ACS nano 14 (10), 13593-13601, 2020
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