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Malgorzata Sznajder
Malgorzata Sznajder
University of Rzeszow, College of Natural Sciences, Institute of Physics
Bestätigte E-Mail-Adresse bei ur.edu.pl
Titel
Zitiert von
Zitiert von
Jahr
Elementary energy bands in ab initio calculations of the YAlO3 and SbSI crystal band structure
DM Bercha, KZ Rushchanskii, M Sznajder, A Matkovskii, P Potera
Physical Review B 66 (19), 195203-1-195203-9, 2002
652002
Similarities of the band structure of In4Se3 and InSe under pressure and peculiarities of the creation of the band gap
M Sznajder, KZ Rushchanskii, LY Kharkhalis, DM Bercha
physica status solidi (b) 243 (3), 592-609, 2006
542006
Band Structure and Condenson States in In4Se3 Crystals
DM Bercha, LY Kharkhalis, AI Bercha, M Sznajder
physica status solidi (b) 203 (2), 427-440, 1997
381997
Elementary energy bands in the band structure of the narrow-band-gap semiconductor CdSb
DM Bercha, IV Slipukhina, M Sznajder, KZ Rushchanskii
Physical Review B 70 (23), 235206-1– 235206-8, 2004
372004
Phonon Spectrum of the Layered In4Se3 Crystal
DM Bercha, KZ Rushchanskii, M Sznajder
physica status solidi (b) 212 (2), 247-261, 1999
191999
Condenson state and its effects on thermoelectric properties in In4Se3
YS Lim, M Jeong, WS Seo, JH Lee, CH Park, M Sznajder, LY Kharkhalis, ...
Journal of Physics D: Applied Physics 46 (27), 275304, 2013
172013
DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces
R Hrytsak, P Kempisty, E Grzanka, M Leszczynski, M Sznajder
Computational Materials Science 186, 110039, 2021
162021
Elementary energy bands in band structure calculations of some wide‐bandgap crystals
M Sznajder, DM Bercha, KZ Rushchanskii
physica status solidi (a) 201 (2), 304-307, 2004
162004
Electron Phonon Interaction as a Mechanism of Phase Transition in the CuInP2S6 Crystal
DM Bercha, SA Bercha, KE Glukhov, M Sznajder
Acta Physica Polonica A 126 (5), 1143-1145, 2014
142014
Structure similarity and lattice dynamics of InSe and In4Se3 crystals
DM Bercha, KZ Rushchanskii, LY Kharkhalis, M Sznajder
Condensed Matter Physics 3, 749-757, 2000
122000
Elementary energy bands in the band structure of AIV, AIIIBV crystals and superlattices built upon them
DM Bercha, KE Glukhov, M Sznajder
physica status solidi (b) 244 (4), 1318-1336, 2007
112007
DFT-based modelling of carbon adsorption on the AlN surfaces and influence of point defects on the stability of diamond/AlN interfaces
M Sznajder
Diamond and Related Materials 103, 107694, 2020
102020
Vibronic interaction in crystals with the Jahn-Teller centers in the elementary energy bands concept
DM Bercha, SA Bercha, KE Glukhov, M Sznajder
arXiv preprint arXiv:1510.06671, 2015
82015
Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study
R Hrytsak, P Kempisty, E Grzanka, M Leszczynski, M Sznajder
Materials 15 (2), 478, 2022
72022
Ab initio studies of early stages of AlN growth process on the oxygen-terminated diamond (111) surface
M Sznajder, R Hrytsak
Diamond and Related Materials 83, 94-103, 2018
72018
The band structure of a layered Hg3TeCl4 crystal formed by energy states of HgCl2 and HgTe crystals
M Sznajder, DM Bercha, LY Kharkhalis
physica status solidi (b) 245 (8), 1571-1579, 2008
72008
Parameters of an Unique Condenson State in the Structure of the In4Se3 Crystal
M Sznajder, YS Lim, KE Glukhov, LY Kharkhalis, DM Bercha
Acta Physica Polonica A 122 (6), 1115-1117, 2012
62012
Band structure and the model of a disorder in the In4Se3 crystal
M Sznajder, DM Bercha, LY Kharkhalis
Opto-Electronics Review 1997 (2), 123-128, 1997
61997
Ab initio studies of early stages of nitride growth process on silicon carbide
M Sznajder, E Wachowicz, JA Majewski
Journal of Crystal Growth 401, 25-29, 2014
52014
Condenson-related thermoelectric properties and formation of coherent nanoinclusions in Te-substituted In4Se3 compounds
M Jeong, YS Lim, WS Seo, JH Lee, CH Park, M Sznajder, LY Kharkhalis, ...
Journal of Materials Chemistry A 1 (48), 15342-15347, 2013
52013
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