Folgen
Jie Cheng
Jie Cheng
Tsinghua University
Bestätigte E-Mail-Adresse bei tsinghua.org.cn
Titel
Zitiert von
Zitiert von
Jahr
Performance of carbide tools with textured rake-face filled with solid lubricants in dry cutting processes
D Jianxin, W Ze, L Yunsong, Q Ting, C Jie
International Journal of Refractory Metals and Hard Materials 30 (1), 164-172, 2012
3102012
Synergetic effect of potassium molybdate and benzotriazole on the CMP of ruthenium and copper in KIO4-based slurry
J Cheng, T Wang, H Mei, W Zhou, X Lu
Applied surface science 320, 531-537, 2014
442014
Surface characteristics of ruthenium in periodate-based slurry during chemical mechanical polishing
J Cheng, T Wang, L Jiang, X Lu
Applied Surface Science 351, 401-409, 2015
342015
Micro-galvanic corrosion of Cu/Ru couple in potassium periodate (KIO4) solution
J Cheng, J Pan, T Wang, X Lu
Corrosion Science 137, 184-193, 2018
282018
Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry
J Cheng, T Wang, Y He, X Lu
Applied Surface Science 337, 130-137, 2015
282015
Galvanic corrosion inhibitors for Cu/Ru couple during chemical mechanical polishing of Ru
J Cheng, T Wang, X Lu
ECS Journal of Solid State Science and Technology 6 (1), P62, 2016
252016
Effects of KIO4 concentration and pH values of the solution relevant for chemical mechanical polishing of ruthenium
J Cheng, T Wang, J Wang, Y Liu, X Lu
Microelectronic Engineering 151, 30-37, 2016
212016
Evolution of entrained water film thickness and dynamics of Marangoni flow in Marangoni drying
C Li, D Zhao, J Wen, J Cheng, X Lu
RSC advances 8 (9), 4995-5004, 2018
142018
Tribocorrosion study of copper during chemical mechanical polishing in potassium periodate-based slurry
J Cheng, T Wang, Z Chai, X Lu
Tribology Letters 58, 1-11, 2015
132015
Corrosion investigations of ruthenium in potassium periodate solutions relevant for chemical mechanical polishing
J Cheng, T Wang, J Pan, X Lu
Journal of Electronic Materials 45, 4067-4075, 2016
122016
Chemical mechanical polishing of inlaid copper structures with Ru/Ta/TaN as barrier/liner layer
J Cheng, B Wang, T Wang, C Li, X Lu
ECS Journal of Solid State Science and Technology 7 (11), P634, 2018
92018
A theoretical model incorporating both the nano-scale material removal and wafer global uniformity during planarization process
J Li, Z Wei, T Wang, J Cheng, Q He
Thin Solid Films 636, 240-246, 2017
82017
Residual stress and pop-out simulation for TSVs and contacts in via-middle process
C Rao, T Wang, Y Peng, J Cheng, Y Liu, SK Lim, X Lu
IEEE Transactions on Semiconductor Manufacturing 30 (2), 143-154, 2017
72017
Role of the adhesion force during copper chemical mechanical planarization
J Li, J Liu, J Cheng, H Li, T Wang, J Liu
ECS Journal of Solid State Science and Technology 7 (8), P410, 2018
42018
A kinematic model describing particle movement near a surface as effected by Brownian motion and electrostatic and Van der Waals forces
HG Mei, DW Zhao, TQ Wang, J Cheng, XC Lu
Science China Technological Sciences 57, 2144-2152, 2014
42014
Ruthenium and Copper CMP in periodate-based slurry with BTA and K2MoO4 as compound corrosion inhibitors
J Cheng, T Wang, J Wang, Y He, X Lu
Proceedings of International Conference on Planarization/CMP Technology 2014 …, 2014
32014
Characterization of lanthanide elements doped ceria nanoparticles and its performance in chemical mechanical polishing as novel abrasive particles
J Cheng, Y Li, X Lu
2018 China Semiconductor Technology International Conference (CSTIC), 1-4, 2018
22018
The Behaviors of Alkaline Slurry during the CMP of TSV Backside Heterogeneous Microstructure
B Wang, Y Liu, J Cheng, C Rao, X Lu
Ecs Journal of Solid State Science and Technology 7 (2), P15, 2018
22018
Exploring Java 9
F Cheng
Berkeley, CA: Apress, 2018
22018
Investigations of Annealing Effect on TSV CMP
C Rao, T Wang, J Cheng, Y Liu, X Lu
ICPT 2017; International Conference on Planarization/CMP Technology, 1-4, 2017
12017
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20