Andrew R J Marshall
Andrew R J Marshall
Lecturer of Physics, Lancaster University
Verified email at - Homepage
Cited by
Cited by
Low leakage-current InAsSb nanowire photodetectors on silicon
MD Thompson, A Alhodaib, AP Craig, A Robson, A Aziz, A Krier, ...
Nano letters 16 (1), 182-187, 2016
Temperature dependence of leakage current in InAs avalanche photodiodes
PJ Ker, ARJ Marshall, AB Krysa, JPR David, CH Tan
IEEE Journal of quantum electronics 47 (8), 1123-1128, 2011
Extremely low excess noise in InAs electron avalanche photodiodes
ARJ Marshall, CH Tan, MJ Steer, JPR David
IEEE Photonics Technology Letters 21 (13), 866-868, 2009
Impact ionization in InAs electron avalanche photodiodes
ARJ Marshall, JPR David, CH Tan
IEEE Transactions on Electron Devices 57 (10), 2631-2638, 2010
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
ARJ Marshall, PJ Ker, A Krysa, JPR David, CH Tan
Optics express 19 (23), 23341-23349, 2011
Fabrication of InAs photodiodes with reduced surface leakage current
ARJ Marshall, CH Tan, JPR David, JS Ng, M Hopkinson
Optical Materials in Defence Systems Technology IV 6740, 67400H, 2007
Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon
E Delli, V Letka, PD Hodgson, E Repiso, JP Hayton, AP Craig, Q Lu, ...
ACS Photonics 6 (2), 538-544, 2019
Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing
PJ Ker, ARJ Marshall, JPR David, CH Tan
physica status solidi c 9 (2), 310-313, 2012
Open‐circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration
H Fujita, PJ Carrington, MC Wagener, JR Botha, ARJ Marshall, J James, ...
Progress in Photovoltaics: Research and Applications 23 (12), 1896-1900, 2015
InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers
Q Lu, Q Zhuang, A Marshall, M Kesaria, R Beanland, A Krier
Semiconductor Science and Technology 29 (7), 075011, 2014
InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 C
Q Lu, X Zhou, A Krysa, A Marshall, P Carrington, CH Tan, A Krier
Solar Energy Materials and Solar Cells 179, 334-338, 2018
Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
JE Green, WS Loh, ARJ Marshall, BK Ng, RC Tozer, JPR David, ...
IEEE transactions on electron devices 59 (4), 1030-1036, 2012
Room-temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires
A Alhodaib, YJ Noori, PJ Carrington, AM Sanchez, MD Thompson, ...
Nano letters 18 (1), 235-240, 2017
Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells
H Fujita, J James, PJ Carrington, ARJ Marshall, A Krier, MC Wagener, ...
Semiconductor Science and Technology 29 (3), 035014, 2014
Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared
AP Craig, F Al-Saymari, M Jain, A Bainbridge, GR Savich, T Golding, ...
Applied Physics Letters 114 (15), 151107, 2019
Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP
R Wheatley, M Kesaria, LJ Mawst, JD Kirch, TF Kuech, A Marshall, ...
Applied Physics Letters 106 (23), 232105, 2015
Resonant cavity-enhanced photodetector incorporating a type-II superlattice to extend MWIR sensitivity
V Letka, A Bainbridge, AP Craig, F Al-Saymari, ARJ Marshall
Optics express 27 (17), 23970-23980, 2019
Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells
L Tang, C Xu, Z Liu, Q Lu, A Marshall, A Krier
Solar Energy Materials and Solar Cells 163, 263-269, 2017
III-V semiconductor extended short-wave infrared detectors
GR Savich, DE Sidor, X Du, GW Wicks, MC Debnath, TD Mishima, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs
JA Keen, D Lane, M Kesaria, ARJ Marshall, A Krier
Journal of Physics D: Applied Physics 51 (7), 075103, 2018
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