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Ludwik Kranz
Ludwik Kranz
University of New South Wales, Silicon Quantum Computing Pty. Ltd.
Verified email at unsw.edu.au
Title
Cited by
Cited by
Year
A two-qubit gate between phosphorus donor electrons in silicon
Y He, SK Gorman, D Keith, L Kranz, JG Keizer, MY Simmons
Nature 571 (7765), 371-375, 2019
3222019
Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon
L Kranz, SK Gorman, B Thorgrimsson, Y He, D Keith, JG Keizer, ...
Advanced Materials 32 (40), 2003361, 2020
552020
Benchmarking high fidelity single-shot readout of semiconductor qubits
D Keith, SK Gorman, L Kranz, Y He, JG Keizer, MA Broome, MY Simmons
New Journal of Physics 21 (6), 063011, 2019
392019
Coherent control of a donor-molecule electron spin qubit in silicon
L Fricke, SJ Hile, L Kranz, Y Chung, Y He, P Pakkiam, MG House, ...
Nature communications 12 (1), 3323, 2021
382021
Impact of charge noise on electron exchange interactions in semiconductors
D Keith, SK Gorman, Y He, L Kranz, MY Simmons
npj Quantum Information 8 (1), 17, 2022
92022
The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors
L Kranz, SK Gorman, B Thorgrimsson, S Monir, Y He, D Keith, K Charde, ...
Advanced Materials 35 (6), 2201625, 2023
72023
Ramped measurement technique for robust high-fidelity spin qubit readout
D Keith, Y Chung, L Kranz, B Thorgrimsson, SK Gorman, MY Simmons
Science Advances 8 (36), eabq0455, 2022
72022
Hyperfine-mediated spin relaxation in donor-atom qubits in silicon
YL Hsueh, L Kranz, D Keith, S Monir, Y Chung, SK Gorman, R Rahman, ...
Physical Review Research 5 (2), 023043, 2023
52023
Quantum Computing: Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon (Adv. Mater. 40/2020)
L Kranz, SK Gorman, B Thorgrimsson, Y He, D Keith, JG Keizer, ...
Advanced Materials 32 (40), 2070298, 2020
52020
High-Fidelity CNOT Gate for Donor Electron Spin Qubits in Silicon
L Kranz, S Roche, SK Gorman, JG Keizer, MY Simmons
Physical Review Applied 19 (2), 024068, 2023
42023
High-fidelity initialization and control of electron and nuclear spins in a four-qubit register
J Reiner, Y Chung, SH Misha, C Lehner, C Moehle, D Poulos, S Monir, ...
Nature Nanotechnology, 1-7, 2024
22024
Exploiting Atomic Control to Show When Atoms Become Molecules
L Kranz, EN Osika, S Monir, YL Hsueh, L Fricke, SJ Hile, Y Chung, ...
Advanced Functional Materials 34 (8), 2307285, 2024
12024
Engineering Spin‐Orbit Interactions in Silicon Qubits at the Atomic‐Scale
YL Hsueh, D Keith, Y Chung, SK Gorman, L Kranz, S Monir, Z Kembrey, ...
Advanced Materials, 2312736, 2024
12024
The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)
L Kranz, SK Gorman, B Thorgrimsson, S Monir, Y He, D Keith, K Charde, ...
Advanced Materials 35 (6), 2370039, 2023
12023
Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold
I Thorvaldson, D Poulos, CM Moehle, SH Misha, H Edlbauer, J Reiner, ...
arXiv preprint arXiv:2404.08741, 2024
2024
High-fidelity fast single-shot electron spin readout above 3.5 K
H Geng, M Kiczynski, A Timofeev, E Osika, E Osika, D Keith, J Rowlands, ...
Bulletin of the American Physical Society, 2024
2024
A quantum materials simulator based on Coulomb-confined quantum dots
M Donnelly, J Keizer, D Pye, M Kiczynski, S Sutherland, C Moehle, ...
Bulletin of the American Physical Society, 2024
2024
Impact of measurement backaction on nuclear spin qubits in silicon
S Monir, EN Osika, SK Gorman, I Thorvaldson, YL Hsueh, P Macha, ...
Physical Review B 109 (3), 035157, 2024
2024
Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates
MT Jones, MS Monir, FN Krauth, P Macha, YL Hsueh, A Worrall, ...
ACS nano 17 (22), 22601-22610, 2023
2023
Quantum processing systems and methods
L Kranz, MY Simmons, R Rahman
US Patent App. 18/183,091, 2023
2023
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